Thin-film structural body and method for fabricating thereof

Patent metadata

Field	Value
Publication number	US-10697090-B2
Application number	US-201815872967-A
Country	US
Kind code	B2
Filing date	Jan 16, 2018
Priority date	Jun 23, 2017
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

First claim

The invention claimed is:

1. A thin film structural body comprising:
a sapphire substrate having a principal plane of a {11-26} plane; and
a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate,
wherein
the first epitaxial thin film is formed of an oxide; and
the first epitaxial thin film has a principal plane of a {100} plane.

2. The thin film structural body according to claim 1 , wherein
a <1-100> axis of the sapphire substrate is parallel to a <110> axis of the first epitaxial thin film.

3. The thin film structural body according to claim 1 , wherein
the first epitaxial thin film has one crystalline structure selected from the group consisting of a rock saltline crystalline structure, a spinel crystalline structure, and a perovskite crystalline structure.

4. The thin film structural body according to claim 1 , wherein
the following mathematical formula (I) is satisfied:
0.35 n nanometers≤ a ≤0.47 n nanometers  (I)

where
a represents a lattice constant of the first epitaxial thin film, and
n represents a natural number.

5. The thin film structural body according to claim 1 , wherein
the first epitaxial thin film is formed of one material selected from the group consisting of nickel oxide, nickel cobaltite, and sodium bismuth barium titanate.

6. The thin film structural body according to claim 1 , further comprising:
a second epitaxial thin film which is grown on the principal plane of the {100} plane of the first epitaxial thin film and has a principal plane of a {100} plane.

7. A method for fabricating a thin film structural body, the method comprising:
(a) growing a first epitaxial thin film on a principal plane of a first substrate which is a sapphire substrate,
wherein
the principal plane of the sapphire substrate is a {11-26} plane;
the first epitaxial thin film is formed of an oxide; and
the first epitaxial oxide film has a principal plane of a {100} plane.

8. The method according to claim 7 , further comprising:
(b) bringing the principal plane of the {100} plane of the first epitaxial thin film into contact with a second substrate; and
(c) irradiating the first epitaxial thin film with laser light to separate the sapphire substrate from the first epitaxial thin film,
wherein
in the step (c), the first epitaxial thin film is irradiated with the laser light in such a manner that the laser light passes through an inside of the sapphire substrate.

9. The method according to claim 7 , further comprising:
(b) growing a second epitaxial thin film on the principal plane of the {100} plane of the first epitaxial thin film;
wherein the second epitaxial thin film has a principal plane of a {100} plane,
(c) bringing the principal plane of the {100} plane of the second epitaxial thin film into contact with a second substrate; and
(d) irradiating the first epitaxial thin film with laser light to separate the sapphire substrate from the first epitaxial thin film,
wherein
in the step (d), the first epitaxial thin film is irradiated with the laser light in such a manner that the laser light passes through an inside of the sapphire substrate.

10. The method according to claim 9 , further comprising:
(e) removing the first epitaxial thin film with the laser light.

11. The method according to claim 7 , wherein
the first epitaxial thin film contains nickel or iron.

12. The method according to claim 7 , wherein
the first epitaxial thin film is formed of one material selected from the group consisting of nickel oxide, nickel cobaltite, and sodium bismuth barium titanate.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Adachi Hideaki
• Takayama Ryouichi
• Harigai Takakiyo
• Tanaka Yoshiaki

Classifications

• C30B29/16 Primary

  Oxides · CPC title

• H10N30/076

  by vapour phase deposition · CPC title

• H10N30/85 Primary

  Piezoelectric or electrostrictive active materials · CPC title

• H10N30/853

  Ceramic compositions · CPC title

• H10N30/50

  having a stacked or multilayer structure · CPC title