Method of electrochemically preparing silicon film
US-2015050816-A1 · Feb 19, 2015 · US
One-step growth of a dense, photoresponsive silicon film in molten calcium chloride
US10697080B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10697080-B2 |
| Application number | US-201615572321-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 6, 2016 |
| Priority date | May 7, 2015 |
| Publication date | Jun 30, 2020 |
| Grant date | Jun 30, 2020 |
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Abstract
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Photoactive silicon films may be formed by electrodeposition from a molten salt electrolyte. In an embodiment, SiO2 is electrochemically reduced in a molten salt bath to deposit silicon on a carbonaceous substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of depositing silicon on a substrate comprising electrochemically reducing silicon dioxide particles in a molten salt to deposit silicon on a carbonaceous substrate, wherein the electrochemical reduction of the silicon dioxide particles is carried out at a constant current density, and wherein the constant current density is selected from a current in the range of 2 mA/cm 2 to 8 mA/cm 2 . 2. The method of claim 1 , wherein the silicon is deposited as a film on the carbonaceous substrate. 3. The method of claim 1 , wherein the silicon is deposited as nanowires on the carbonaceous substrate. 4. The method of claim 1 , wherein the molten salt comprises calcium chloride. 5. The method of claim 1 , wherein the molten salt is at a temperature of less than about 1000° C. 6. The method of claim 1 , wherein the carbonaceous substrate is a graphite substrate. 7. The method of claim 1 , further comprising adding boron to the molten salt to produce a boron doped silicon film on the metal substrate. 8. The method of claim 1 , wherein the silicon is deposited for a time of between about 0.75 hours and about 1.5 hours. 9. The method of claim 1 , further comprising adding arsenic to the molten salt to produce an arsenic doped silicon film on the metal substrate. 10. The method of claim 1 , further comprising adding phosphorus to the molten salt to produce a phosphorous doped silicon film on the metal substrate.
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P-type · CPC title
N-type · CPC title
using melted materials · CPC title
Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title
Nanowires · CPC title
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Frequently asked questions
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- What does patent US10697080B2 cover?
- Photoactive silicon films may be formed by electrodeposition from a molten salt electrolyte. In an embodiment, SiO2 is electrochemically reduced in a molten salt bath to deposit silicon on a carbonaceous substrate.
- Who is the assignee on this patent?
- Univ Texas
- What technology area does this patent fall under?
- Primary CPC classification C25D9/08. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 30 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).