Single-crystal diamond, method of producing same, tool including single-crystal diamond, and component including single-crystal diamond

Patent metadata

Field	Value
Publication number	US-10697058-B2
Application number	US-201515327439-A
Country	US
Kind code	B2
Filing date	Jul 22, 2015
Priority date	Jul 22, 2014
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

In an X-ray topography image for a crystal growth main surface of a single-crystal diamond, a group of crystal defect points are gathered, each of the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists. Further, in the single-crystal diamond, a plurality of crystal defect line-like gathered regions exist in parallel. In the plurality of crystal defect line-like gathered regions, groups of crystal defect points are gathered to extend in the form of lines in a direction angled by not more than 30° relative to one arbitrarily specified direction. Accordingly, a single-crystal diamond is provided which is used suitably for a cutting tool, a polishing tool, an optical component, an electronic component, a semiconductor material, and the like.

First claim

The invention claimed is:

1. A single-crystal diamond, wherein in an X-ray topography image for a crystal growth main surface of the single-crystal diamond, a plurality of crystal defect line-like gathered regions exist in parallel, and in the plurality of crystal defect line-like gathered regions, groups of crystal defect points are gathered to extend in a form of lines in a direction angled by not more than 30° relative to one arbitrarily specified direction, each of the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists, wherein
a density of the crystal defect points is more than 20 mm −2 .

2. The single-crystal diamond according to claim 1 , wherein two or more crystal defect line-like gathered regions exist for every 1 mm in a direction perpendicular to a direction in which the crystal defect line-like gathered regions extend in the form of lines, and an interval between the crystal defect line-like gathered regions is not more than 500 μm in the direction in which the crystal defect line-like gathered regions extend in the form of lines.

3. The single-crystal diamond according to claim 1 , wherein the crystal defect line-like gathered regions include five or more crystal defect line-like gathered regions each having a long length of not less than 300 μm for every 1 cm 2 at the crystal growth main surface.

4. The single-crystal diamond according to claim 1 , wherein a density of combined dislocation points of the crystal defect points is more than 20 mm −2 , each of the combined dislocation points being a tip point of a combined dislocation reaching the crystal growth main surface, the combined dislocation resulting from a combination of at least either of a plurality of edge dislocations and a plurality of screw dislocations.

5. The single-crystal diamond according to claim 1 , comprising a plurality of single-crystal diamond layers.

6. The single-crystal diamond according to claim 5 , wherein
the crystal defect line is newly generated or branched at an interface between the single-crystal diamond layers, and
a density of the crystal defect points of the crystal growth main surface is higher than a density of the crystal defect points of a main surface opposite to the crystal growth main surface.

7. The single-crystal diamond according to claim 5 , wherein
the crystal defect line is newly generated, disappeared, branched or merged at an interface between the single-crystal diamond layers, and
densities of the crystal defect points of the crystal growth main surface and the crystal defect points of a crystal growth main surface opposite to the crystal growth main surface are higher than a density of the crystal defect points at the interface between the single-crystal diamond layers.

8. The single-crystal diamond according to claim 1 , comprising not less than 1 ppm of nitrogen atoms as impurity atoms.

9. The single-crystal diamond according to claim 1 , comprising less than 1 ppm of nitrogen atoms as impurity atoms.

10. The single-crystal diamond according to claim 1 , wherein a transmittance for 400-nm light is not more than 60% when the single-crystal diamond has a thickness of 500 μm.

11. The single-crystal diamond according to claim 1 , wherein
the arbitrarily specified direction in which groups of crystal defect lines are gathered to extend in the form of lines is the <001> or the <110> direction, and
the crystal growth main surface corresponds to the (001) plane.

12. A tool selected from a group consisting of a cutting bite, a milling cutter wiper, an end mill, a drill, a reamer, a cutter, a dresser, a wire guide, a wire drawing die, a water jet nozzle, a diamond knife, a glass cutter, and a scriber, the tool including the single-crystal diamond recited in claim 1 at a contact portion with a workpiece.

13. A component selected from a group consisting of an optical component, a heat sink, a biochip, a sensor, and a semiconductor substrate, the component including the single-crystal diamond recited in claim 1 .

Assignees

• Sumitomo Electric Industries

Inventors

• Tatsumi Natsuo
• Nishibayashi Yoshiki
• Sumiya Hitoshi

Classifications

• C30B29/04 Primary

  Diamond · CPC title

• C23C16/27

  Diamond only · CPC title

• B24B53/047

  equipped with one or more diamonds · CPC title

• B23B2226/31

  Diamond · CPC title

• B23B27/14

  Cutting tools of which the bits or tips {or cutting inserts} are of special material · CPC title