Photocatalytic composition that comprises metal particles and two semiconductors including one made of indium oxide

Patent metadata

Field	Value
Publication number	US-10695753-B2
Application number	US-201515518931-A
Country	US
Kind code	B2
Filing date	Oct 6, 2015
Priority date	Oct 14, 2014
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

The invention relates to a composition that contains a first semiconductor SC1, particles that comprise one or more element(s) M in the metal state selected from among an element of groups IVB, VB, VIB, VIIB, VIIIB, IB, IIB, IIIA, IVA and VA of the periodic table, and a second semiconductor SC2 that comprises indium oxide, with said first semiconductor SC1 being in direct contact with said particles that comprise one or more element(s) M in the metal state, with said particles being in direct contact with said second semiconductor SC2 that comprises indium oxide in such a way that the second semiconductor SC2 covers at least 50% of the surfaces of the particles that comprise one or more element(s) M in the metal state. The invention also relates to its preparation method as well as its application of photocatalysis.

First claim

The invention claimed is:

1. A composition that comprises a first semiconductor SC1 that is TiO 2 , Bi 2 S 3 , Bi 2 O 3 , Fe 2 O 3 , ZnO, WO 3 , CuO, ZnFe 2 O 4 , MoS 2 or In(OH) 2 , particles comprising one or more element(s) M in the metal state that are platinum, palladium, gold, nickel, cobalt, ruthenium, silver, copper, rhenium, or rhodium, and a second semiconductor SC2 that comprises indium oxide and does not contain an element of the group of metals of the periodic table other than indium, with said first semiconductor SC1 being in direct contact with said particles that comprise one or more element(s) M in the metal state, with said particles being in direct contact with said second semiconductor SC2 that comprises indium oxide in such a way that the second semiconductor SC2 covers at least 50% of the total surfaces of the particles that comprise one or more element(s) M in the metal state, the covering rate is measured by X-ray photoelectron spectrometry, and in which said first semiconductor SC1 forms a substrate, said substrate contains on its surface core-shell particles, with said shell being formed by said semiconductor SC2 that comprises indium oxide, said core being formed by said particles that comprise one or more element(s) M in the metal state.

2. The composition according to claim 1 , in which the indium oxide consists of In 2 O 3 .

3. The composition according to claim 1 , in which the indium oxide content of the semiconductor SC2, expressed in terms of the element In, is 0.01 to 50% by weight in relation to the total weight of the composition.

4. The composition according to claim 1 , in which the content of the one or more element(s) M in the metal state is 0.001 to 20% by weight in relation to the total weight of the composition.

5. The composition according to claim 1 , in which said particles that comprise one or more element(s) M in the metal state are in the form of particles of sizes of 0.5 nm to 1000 nm.

6. The composition according to claim 1 , in the form of nanometric powder.

7. The composition according to claim 1 , in which the shell has a thickness of 1 nm to 1000 nm.

8. A method for preparation of the composition according to claim 1 comprising:
a) a suspension that contains a first semiconductor SC1 in a liquid mixture that consists of water and/or one or more organic compounds and at least one metal precursor of platinum, palladium, gold, nickel, cobalt, ruthenium, silver, copper, rhenium, or rhodium is prepared while being stirred, and the suspension is irradiated by an irradiation source such that at least a portion of the emission spectrum of said source consists of photons having energies that exceed the width of the forbidden band of the semiconductor SC1,
b) introducing, into the suspension that is obtained in a), a soluble indium precursor with a degree of oxidation of +3, under stirring and irradiation of said irradiation source,
c) introducing a basic agent under stirring and irradiation of said irradiation source, in such a way as to bring about the precipitation of indium oxide,
d) separating the composition from the suspension of step c),
e) drying the composition that is obtained in step d) and
f) optionally subjecting the dried composition that is obtained in e) to a heat treatment.

9. The preparation method according to claim 8 , in which in c), having a pH between 5 and 13 after the basic agent is introduced.

10. A photocatalysis method comprising irradiating a mixture of a compound in the presence of a composition of claim 1 .

11. The composition according to claim 1 , in which the indium oxide which does not contain an element of the group of metals of the periodic table other than indium is In 2 O 3 .

Assignees

• Centre Nat Rech Scient
• Univ Claude Bernard—Lyon 1
• Ifp Energies Now
• Univ Claude Bernard Lyon

Inventors

• Lofficial Dina
• Fecant Antoine
• Uzio Denis
• Puzenat Eric
• Geantet Christophe

Classifications

• B01J2235/30

  Scanning electron microscopy; Transmission electron microscopy · CPC title

• B01J2235/00

  Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title

• B01J35/45

  Nanoparticles · CPC title

• C01B2203/1064

  Platinum group metal catalysts · CPC title

• C01B3/26

  using catalysts · CPC title