Integrated medical device

Patent metadata

Field	Value
Publication number	US-10694953-B2
Application number	US-201213261923-A
Country	US
Kind code	B2
Filing date	Dec 19, 2012
Priority date	Dec 20, 2011
Publication date	Jun 30, 2020
Grant date	Jun 30, 2020

Abstract

There is herein described light emitting medical devices and a method of manufacturing said medical devices. More particularly, there is described integrated light emitting medical devices (e.g. neural devices) capable of being used in optogenetics and a method of manufacturing said medical devices.

First claim

The invention claimed is:

1. An integrated light emitting neural probe, comprising:
a base region including integrated connection points;
an integrated elongate probe extending from the base region, an end of the integrated elongate probe opposite the base region including a distal tip;
a light emitting diode (LED) configured to generate light, the LED located at the distal tip of the integrated elongate probe and at a first side of the integrated elongate probe, the LED being coupled to the integrated connection points via electrical circuitry extending through the integrated elongate probe; and
an integrated detector configured to detect electrical signals indicating responses of neurons illuminated by the LED, the integrated detector located at a second side of the integrated elongate probe opposite the first side.

2. The integrated light emitting neural probe according to claim 1 , wherein the integrated detector is located at the distal tip.

3. The integrated light emitting neural probe according to claim 1 , wherein the integrated elongate probe with the distal tip has a needle-like structure.

4. The integrated light emitting neural probe according to claim 1 , wherein the integrated light emitting neural probe is formed from one of:
gallium nitride on a silicon carrier or gallium nitride on a sapphire carrier; or
indium gallium arsenide or aluminium gallium arsenide on a sapphire, silicon, insulating dielectric or compound semiconductor carrier.

5. The integrated light emitting neural probe according to claim 1 , wherein the LED includes a shape that increases light emission extraction by the LED.

6. The integrated light emitting neural probe according to claim 1 , further comprising a substrate that forms the integrated elongate probe, the substrate including multiple integrated detectors formed at predetermined gaps from the LED.

7. The integrated light emitting neural probe according to claim 1 , further comprising a second LED of a differing wavelength to the LED in the integrated elongate probe.

8. The integrated light emitting neural probe according to claim 1 , further including a plurality of LEDs including the LED, the plurality of LEDs located on the integrated elongate probe.

9. The integrated light emitting neural probe according to claim 1 , further comprising a ground plane in the integrated elongate probe, the ground plane being between the LED and the integrated detector.

10. The integrated light emitting neural probe according to claim 1 , further comprising an optical blocking layer in the integrated elongate probe, the optical blocking layer being between the LED and the integrated detector.

11. The integrated light emitting neural probe according to claim 10 , further comprising a ground plane to shield detector signals of the integrated detector from an LED drive signal of the LED, the ground plane being between the LED and the integrated detector.

12. The integrated light emitting neural probe according to claim 1 , further including a plurality of integrated detectors forming a ring structure.

13. The integrated light emitting neural probe according to claim 1 , wherein the LED includes a lens to collimate the light.

14. The integrated light emitting neural probe according to claim 1 , further comprising an array of detectors including the integrated detector and an optical blocking layer that suppresses induced cross-talk effects in the array of detectors.

15. The integrated light emitting neural probe according to claim 1 , wherein the integrated elongate probe extending from the base region includes a semiconductor material that forms a portion of the LED.

16. The integrated light emitting neural probe according to claim 15 , wherein the semiconductor material forms a mesa of the LED that collimates light emitted from the LED.

17. A method of manufacturing an integrated light emitting neural probe, comprising:
providing a base region from a substrate, the base region including connection points;
providing an integrated elongate probe extending from the base region, an end of the integrated elongate probe opposite the base region including a distal tip; and
providing a light emitting diode (LED) configured to generate light, the LED located at the distal tip of the integrated elongate probe and at a first side of the integrated elongate probe, the LED being coupled to the connection points via electrical circuitry extending through the integrated elongate probe; and
providing an integrated detector configured to detect electrical signals indicating responses of neurons illuminated by the LED, the integrated detector located at a second side of the integrated elongate probe opposite the first side.

18. The method of manufacturing an integrated light emitting neural probe according to claim 17 , further comprising:
cleaning the substrate using a solvent and deoxidizing the substrate using HCl; and
depositing a layer of metal onto the substrate using an evaporation technique.

19. The method of manufacturing an integrated light emitting neural probe according to claim 18 , further comprising:
depositing a photoresist defining a p mesa structure on the layer of metal; and
etching areas of the layer of metal away from the p mesa structure using reactive ion etching (RIE) photolithography.

20. The method of manufacturing an integrated light emitting neural probe according to claim 19 , further comprising:
etching areas of the substrate away from the p mesa structure to form a mesa;
removing the photoresist from the p mesa structure; and
depositing an oxide layer using a plasma enhanced chemical vapor deposition (PECVD).

21. The method of manufacturing an integrated light emitting neural probe according to claim 17 , wherein the integrated elongate probe extending from the base region includes a semiconductor material and providing the LED located at the distal tip of the integrated elongate probe includes fabricating a portion of the LED using the semiconductor material.

Assignees

• Facebook Tech Llc

Inventors

• Small James
• Bonar James Ronald
• Gong Zheng
• Valentine Gareth John
• Gu Erdan
• Dawson Martin David

Classifications

• A61B5/24

  Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof · CPC title

• A61N5/0622 Primary

  Optical stimulation for exciting neural tissue · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/0137

  the light-emitting regions comprising nitride materials · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title