Infrared emitter arrangement and method for producing an infrared emitter arrangement

Patent metadata

Field	Value
Publication number	US-10694584-B2
Application number	US-201715818835-A
Country	US
Kind code	B2
Filing date	Nov 21, 2017
Priority date	Nov 22, 2016
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. The carrier includes at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure. The method further includes securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure.

First claim

What is claimed is:

1. A method for producing an infrared emitter arrangement, the method comprising:
providing a carrier, wherein the carrier comprises at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure; and
securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure; wherein the infrared filter layer structure comprises a filter layer carrier and an infrared filter layer formed at least one of on or in the filter layer carrier, wherein the infrared filter layer is disposed between a region of the filter layer carrier and the carrier;

wherein the filter layer carrier is optically transmissive for infrared radiation.

2. The method of claim 1 , further comprising:
forming the at least one cutout in the carrier by an etching process.

3. The method of claim 1 , further comprising:
thinning the carrier from the second side.

4. The method of claim 1 , further comprising:
before securing the infrared filter layer structure, securing the carrier at an auxiliary carrier, wherein the first side of the carrier faces the auxiliary carrier.

5. The method of claim 4 ,
wherein a spacer structure is arranged between the carrier and the auxiliary carrier in such a way that a gap is provided between the carrier and the auxiliary carrier.

6. The method of claim 1 ,
wherein the infrared filter layer structure comprises a filter layer carrier and an infrared filter layer, wherein the infrared filter layer is formed at least one of on or in the filter layer carrier.

7. The method of claim 6 ,
wherein the infrared filter layer structure is secured at the carrier in such a way that the infrared filter layer faces the carrier.

8. The method of claim 6 ,
wherein the carrier is a semiconductor wafer or a plate-shaped glass carrier.

9. The method of claim 6 ,
wherein the filter layer carrier is a semiconductor wafer or a plate-shaped glass carrier.

10. The method of claim 6 , further comprising:
after securing the infrared filter layer structure at the carrier, thinning the filter layer carrier.

11. The method of claim 6 ,
wherein the infrared filter layer is configured as a Bragg filter layer.

12. The method of claim 1 ,
wherein the carrier defines a plurality of component regions, and
wherein the at least one infrared emitter structure comprises a plurality of infrared emitter structures,
wherein in each case one of the infrared emitter structures is arranged in each of the component regions, and
wherein the at least one cutout comprises a plurality of cutouts,
wherein in each case one of the plurality of cutouts is arranged in each of the component regions,
wherein the infrared filter layer structure comprises a plurality of infrared filter structures,
wherein in each case one of the plurality of infrared filter structures is arranged in each of the component regions, and
wherein a supporting region of the carrier is arranged between in each case two adjacent cutouts.

13. The method of claim 12 , further comprising:
after securing the infrared filter layer structure at the carrier, singulating the plurality of component regions by mechanical sawing through the infrared filter layer structure and through the carrier.

14. The method of claim 12 , further comprising:
before securing the infrared filter layer structure at the carrier, forming a first separating structure in the respective supporting regions of the carrier and forming a second separating structure in the infrared filter layer structure,
wherein, in the course of securing the infrared filter layer structure at the carrier, the first and second separating structures are aligned relative to one another for the purpose of singulating the plurality of component regions by the two separating structures.

15. The method of claim 14 , further comprising:
wherein forming the first separating structure and the second separating structure is carried out by plasma etching.

16. An infrared emitter arrangement, comprising:
a carrier,
an infrared emitter structure arranged at a first side of the carrier,
a cutout extending from a second side of the carrier, said second side being situated opposite the first side, in the direction of the infrared emitter structure; and
an infrared filter layer structure arranged at the second side of the carrier in such a way that the cutout is arranged between the infrared emitter structure and the infrared filter layer structure for the purpose of separating the infrared emitter structure from the infrared filter layer structure, wherein the infrared filter layer structure comprises a filter layer carrier and an infrared filter layer formed at least one of on or in the filter layer carrier, wherein the infrared filter layer is disposed between a region of the filter layer carrier and the carrier;
wherein the filter layer carrier is optically transmissive for infrared radiation.

17. The infrared emitter arrangement of claim 16 ,
wherein the carrier is disposed between the infrared filter layer and the infrared emitter structure.

18. The infrared emitter arrangement of claim 16 ,
wherein the infrared filter layer is configured as a Bragg filter layer.

19. The infrared emitter arrangement of claim 16 ,
wherein at least one of the infrared filter layer structure or the carrier comprises at least one through hole for ventilating the cutout.

20. The infrared emitter arrangement of claim 16 ,
wherein the infrared emitter structure comprises an electrical resistance heating structure.

21. The infrared emitter arrangement of claim 16 ,
wherein the filter layer carrier comprises glass.

22. The infrared emitter arrangement of claim 16 ,
wherein the filter layer carrier comprises a thickness of less than 50 μm.

23. The infrared emitter arrangement of claim 16 ,
wherein the infrared filter layer structure has a thickness in a range of 5 μm to 50 μm.

24. A gas sensor, comprising:
an infrared emitter arrangement for emitting infrared radiation into a measurement region; and
a sensor for detecting infrared radiation, emitted from the measurement region;
the infrared emitter arrangement comprising:
a carrier,
an infrared emitter structure arranged at a first side of the carrier,
a cutout extending from a second side of the carrier, said second side being situated opposite the first side, in the direction of the infrared emitter structure; and
an infrared filter layer structure arranged at the second side of the carrier in such a way that the cutout is arranged between the infrared emitter structure and the infrared filter layer structure for the purpose of separating the infrared emitter structure from the infrared filter layer structure, wherein the infrared filter layer structure comprises a filter layer carrier and an infrared filter layer formed at least one of on or in the filter layer carrier, wherein the infrared filter layer is disposed between a region of the filter layer carrier and the carrier;
wherein the filter layer carrier is optically transmissive for infr

Assignees

• Infineon Technologies Ag

Inventors

• Pindl Stephan
• Porwol Daniel
• Strasser Johann

Classifications

• G01N21/1702 Primary

  with opto-acoustic detection, e.g. for gases or analysing solids · CPC title

• G01N2021/1704

  in gases · CPC title

• H05B3/009 Primary

  heating devices not specially adapted for a particular application · CPC title

• H05B2203/017

  Manufacturing methods or apparatus for heaters · CPC title

• G02B5/208

  for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation · CPC title