Semiconductor device for monitoring a reverse voltage

Patent metadata

Field	Value
Publication number	US-10690703-B2
Application number	US-201815868172-A
Country	US
Kind code	B2
Filing date	Jan 11, 2018
Priority date	Feb 13, 2017
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

First claim

What is claimed is:

1. A semiconductor device comprising:
a reverse voltage monitoring circuit connected to an input node and an output node of a functional block within the semiconductor device and powered by a driving power, the reverse voltage monitoring circuit configured to monitor a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the functional block; and
a passive component connected between an output node of the reverse voltage monitoring circuit and a potential;
wherein the driving power is provided by the output node of the functional block in the semiconductor device.

2. The semiconductor device according to claim 1 , wherein the reverse voltage monitoring circuit comprises a driving power input that receives the driving power.

3. The semiconductor device according to claim 2 , wherein the driving power input is connected to the output node.

4. The semiconductor device according to claim 1 , wherein the functional block is a voltage regulator, a current regulator, a wired charging circuit, a wireless charging circuit, or a low dropout regulator.

5. The semiconductor device according to claim 1 , wherein the reverse voltage monitoring circuit comprises a comparator.

6. The semiconductor device according to claim 5 , wherein the comparator comprises a two-stage comparator.

7. The semiconductor device according to claim 1 , further comprising a logic element connected to the output node.

8. The semiconductor device according to claim 1 , wherein the input node receives a source power voltage.

9. The semiconductor device according to claim 2 , further comprising a driving power generator that is connected to the driving power input and to the output node, that regulates a voltage on the output node according to a mode of the semiconductor device, and outputs the voltage that is regulated to the driving power input.

10. The semiconductor device according to claim 2 , further comprising a driving power selector connected to the driving power input, to the output node and to an external power source,
wherein the driving power selector receives a control signal, selects one of the output node or the external power source, and connects the selected output node or the external power source to the driving power input, according to the control signal.

11. The semiconductor device according to claim 1 , wherein the passive component comprises a resistor or a variable resistor.

12. The semiconductor device according to claim 11 , wherein the passive component is the variable resistor, and the semiconductor device further comprises a resistor controller that receives an operation mode signal indicating an operation mode of the semiconductor device, and controls a resistance of the variable resistor according to the operation mode signal.

13. The semiconductor device according to claim 1 , wherein the potential is ground or a positive voltage.

14. A semiconductor device comprising:
a regulator that regulates a source power voltage to generate a regulated voltage at an output of the regulator;
a comparator that is driven by a driving power, that performs a comparison of the source power voltage with the regulated voltage, and that generates a control signal based on the comparison; and
a passive component connected between a potential and the output of the comparator;
wherein the driving power is provided by the regulated voltage, and
the control signal controls the regulator.

15. The semiconductor device according to claim 14 , wherein the potential is ground or a positive voltage.

16. The semiconductor device according to claim 14 , further comprising an internal circuit electrically coupled to the output of the regulator.

17. The semiconductor device according to claim 16 , wherein the internal circuit is a near field communication circuit, a wireless charging circuit, or a wired charging circuit.

18. The semiconductor device according to claim 16 , wherein the internal circuit is a circuit that is powered by the regulated voltage.

19. The semiconductor device according to claim 14 , wherein:
when the regulated voltage is greater than the source power voltage, the control signal controls the regulator to prevent a reverse voltage across the regulator, and
when the source power voltage is greater than or equal to the regulated voltage, the control signal controls the regulator to regulate the source power voltage.

20. A semiconductor device that operates in a normal mode and a power down mode, the semiconductor device comprising:
a regulator;
a comparator that is driven by a driving power, that performs a comparison of a source power voltage with an output of the regulator, and that generates a control signal that controls the regulator based on the comparison; and
a passive component connected between a potential and an output of the comparator,
wherein
in the normal mode, the driving power is a first voltage, and
in the power down mode, the driving power is a second voltage that is lower than the first voltage.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Jun-Han
• Kong Tae-Hwang
• Kim Kwang-Ho
• Kim Sang-Ho
• Kim Se-Ki
• Yang Jun-Hyeok
• Lee Sung-Yong
• Lee Yong-Jin

Classifications

• H02J7/42

  with electronic devices having internal batteries, e.g. mobile phones · CPC title

• H02J7/865

  Battery or charger load switching, e.g. concurrent charging and load supply (H02J7/50 takes precedence) · CPC title

• G01R19/165 Primary

  Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values · CPC title

• G01R19/14 Primary

  Indicating direction of current; Indicating polarity of voltage · CPC title

• H02J50/80

  involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices · CPC title