Semiconductor device, display system, and electronic device

Patent metadata

Field	Value
Publication number	US-10686080-B2
Application number	US-201916375135-A
Country	US
Kind code	B2
Filing date	Apr 4, 2019
Priority date	Sep 23, 2016
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

A novel semiconductor device is provided. The semiconductor device includes a programmable logic device including a programmable logic element, a control circuit, and a detection circuit. The programmable logic device includes a plurality of contexts. The control circuit is configured to control selection of the contexts. The detection circuit is configured to output a signal corresponding to the amount of radiation. The control circuit is configured to switch between a first mode and a second mode in accordance with the signal corresponding to the amount of radiation. The first mode is a mode in which the programmable logic device performs processing by a multi-context method, and the second mode is a mode in which the programmable logic device performs processing using a majority signal of signals output from the logic element multiplexed by the plurality of contexts.

First claim

What is claimed is:

1. A semiconductor device comprising:
a programmable logic device comprising a programmable logic element and a plurality of contexts;
a control circuit; and
a detection circuit,
wherein the control circuit is configured to control selection of the plurality of contexts,
wherein the detection circuit is configured to output a signal corresponding to an amount of radiation, and
wherein the control circuit is configured to switch to a mode in which the programmable logic device performs processing using a majority signal of a plurality of signals output from the logic element multiplexed by the plurality of contexts in accordance with the signal corresponding to the amount of radiation.

2. The semiconductor device according to claim 1 , wherein each of the plurality of contexts forms the same circuit.

3. The semiconductor device according to claim 1 ,
wherein the detection circuit comprises a memory device and an inspection circuit,
wherein the memory device comprises a memory cell, and
wherein the inspection circuit is configured to generate the signal corresponding to the amount of radiation in accordance with whether there is a variation in data stored in the memory device.

4. The semiconductor device according to claim 3 ,
wherein the logic element comprises a memory circuit,
wherein the memory circuit and the memory cell each comprise a transistor and a capacitor,
wherein one of a source and a drain of the transistor is electrically connected to the capacitor, and
wherein the transistor comprises a metal oxide in a channel formation region.

5. The semiconductor device according to claim 1 ,
wherein the detection circuit comprises a memory device and an inspection circuit,
wherein the memory device comprises a memory cell configured to store multi-level data, and
wherein the inspection circuit is configured to generate the signal corresponding to the amount of radiation in accordance with whether there is a variation in the multi-level data stored in the memory cell.

6. A semiconductor device comprising:
a programmable logic device comprising a programmable logic element and a plurality of contexts;
a control circuit; and
a detection circuit,
wherein the control circuit is configured to control selection of the plurality of contexts,
wherein the detection circuit comprises a memory device,
wherein the memory device comprises memory cells,
wherein the detection circuit is configured to output a signal corresponding to a first number of memory cells in which stored data has varied, and
wherein the control circuit is configured to switch to a mode in which the programmable logic device performs processing using a majority signal of a plurality of signals output from the logic element multiplexed by the plurality of contexts in accordance with the signal.

7. The semiconductor device according to claim 6 , wherein each of the plurality of contexts forms the same circuit.

8. The semiconductor device according to claim 6 , wherein the memory cell is configured to store multi-level data.

9. The semiconductor device according to claim 6 ,
wherein the logic element comprises a memory circuit,
wherein the memory circuit and the memory cell each comprise a transistor and a capacitor,
wherein one of a source and a drain of the transistor is electrically connected to the capacitor, and
wherein the transistor comprises a metal oxide in a channel formation region.

10. A semiconductor device comprising:
a programmable logic device comprising a programmable logic element and a plurality of contexts;
a detection circuit; and
a control circuit configured to switch to a mode in which the programmable logic device performs processing using a majority signal of a plurality of signals output from the logic element multiplexed by the plurality of contexts in accordance with radiation,
wherein the detection circuit comprises a memory device and an inspection circuit, and
wherein the inspection circuit is configured to output a signal corresponding to an amount of radiation in accordance with whether there is a variation in data stored in the memory device.

Assignees

• Semiconductor Energy Lab

Inventors

• Nakagawa Takashi
• Kurokawa Yoshiyuki
• Kozuma Munehiro

Classifications

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D86/423 Primary

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D87/00

  Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D62/83

  being Group IV materials, e.g. B-doped Si or undoped Ge · CPC title