Image sensor and image-capturing device

Patent metadata

Field	Value
Publication number	US-10686001-B2
Application number	US-201615765202-A
Country	US
Kind code	B2
Filing date	Sep 26, 2016
Priority date	Sep 30, 2015
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

An image sensor includes: a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens to generate electric charge; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein: the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided along a direction of an optical axis of the microlens.

First claim

The invention claimed is:

1. An image sensor, comprising:
a photoelectric conversion unit that photoelectrically converts light transmitted through a microlens to generate electric charge;
an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; and
a light shielding unit that blocks light that enters the accumulation unit,
wherein:
a part of the photoelectric conversion unit is provided closer to the microlens in comparison with the light shielding unit with respect to a direction of an optical axis of the microlens; and
parts other than the part of the photoelectric conversion unit is provided closer to the accumulation unit in comparison with the light shielding unit with respect to the direction of the optical axis of the microlens.

2. The image sensor according to claim 1 , comprising:
a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein:
the transfer unit is provided between the photoelectric conversion unit and the accumulation unit with respect to the direction of the optical axis of the microlens.

3. The image sensor according to claim 2 , wherein:
the transfer unit is a transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit.

4. The image sensor according to claim 1 , comprising:
an electrode that is provided around the accumulation unit and forms a transfer path for transferring the electric charge generated by the photoelectric conversion unit to the accumulation unit.

5. The image sensor according to claim 4 , wherein:
the electrode is provided to at least partly surround the transfer path.

6. The image sensor according to claim 1 , wherein
the photoelectric conversion unit receives the light transmitted through the microlens, between the microlens and the light shielding unit.

7. The image sensor according to claim 1 , wherein:
the photoelectric conversion unit has a light receiving surface that receives light entered from a direction that intersects the optical axis of the microlens, between the microlens and the light shielding unit.

8. The image sensor according to claim 1 , wherein:
the photoelectric conversion unit has a plurality of light receiving surfaces that receive light transmitted through the microlens, between the microlens and the light shielding unit.

9. The image sensor according to claim 1 , wherein:
at least a part of the photoelectric conversion unit protrudes to be closer to the microlens in comparison with the light shielding unit.

10. The image sensor according to claim 1 , wherein:
the light shielding unit has an opening; and
at least a part of the photoelectric conversion unit protrudes from the opening beyond the light shielding unit to the light incident side.

11. An image-capturing device, comprising:
an image sensor according to claim 1 ; and
a generation unit that generates image data based on a signal outputted from the image sensor.

12. The image sensor according to claim 1 , wherein:
the light shielding unit has an opening; and
at least a part of the photoelectric conversion unit passes through the opening.

13. The image sensor according to claim 1 , comprising:
a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein:
the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided along the direction of the optical axis of the microlens.

14. The image sensor according to claim 1 , comprising:
a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein:
the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided in an order of the photoelectric conversion unit, the transfer unit, and the accumulation unit along the direction of the optical axis of the microlens.

15. The image sensor according to claim 1 , comprising:
a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein:
the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided on the optical axis of the microlens.

16. The image sensor according to claim 1 , comprising:
a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein:
the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided in an order of the photoelectric conversion unit, the transfer unit, and the accumulation unit on the optical axis of the microlens.

Assignees

• Nikon Corp

Inventors

• Takagi Toru
• Nakayama Satoshi
• Ando Ryoji
• Seo Takashi
• Matsuoka Yohei
• Watanabe Yoshiyuki

Classifications

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H10F39/182

  Colour image sensors · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F39/802

  Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes · CPC title