Method of producing hydrogen peroxide using nanostructured bismuth oxide

Patent metadata

Field	Value
Publication number	US-10683577-B1
Application number	US-201916592713-A
Country	US
Kind code	B1
Filing date	Oct 3, 2019
Priority date	Oct 3, 2019
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

The method of producing hydrogen peroxide using nanostructured bismuth oxide is an electrochemical process for producing hydrogen peroxide using a cathode formed as oxygen-deficient nanostructured bismuth oxide deposited as a film on the surface of a conducting substrate. An anode and the cathode are immersed in an alkaline solution saturated with oxygen in an electrolytic cell. An electrical potential is established across the cathode and the anode to initiate electrochemical reduction of the oxygen in the alkaline solution to produce hydrogen peroxide by oxygen reduction reaction.

First claim

We claim:

1. A method of making an electrode for electrochemical production of hydrogen peroxide, comprising the steps of:
electrodepositing a film of bismuth on a substrate, the substrate having a surface;
annealing the film of bismuth in air, thereby oxidizing the bismuth to form a film of bismuth oxide (Bi 2 O 3 ) on the surface of the substrate; and
annealing the film of bismuth oxide under vacuum, thereby reducing the bismuth oxide to form a film of oxygen-deficient bismuth oxide of formula Bi 2 O 3-x on the surface of the substrate, wherein x is greater than 0 and less than 3.

2. The method of making an electrode according to claim 1 , wherein said substrate comprises fluorine-doped tin oxide.

3. The method of making an electrode according to claim 1 , wherein said step of annealing the film of bismuth in air comprises heating the bismuth film deposited on the substrate at 450° C. in air.

4. The method of making an electrode according to claim 3 , wherein said step of annealing the film of bismuth in air comprises heating the bismuth film deposited on the substrate at 450° C. in air for two hours.

5. The method of making an electrode according to claim 1 , wherein said step of annealing the film of bismuth oxide under vacuum comprises heating the bismuth oxide film deposited on the substrate at 350° C. under vacuum.

6. The method of making an electrode according to claim 4 , wherein said step of annealing the film of bismuth oxide under vacuum comprises heating the bismuth oxide film deposited on the substrate at 350° C. under vacuum for between 0.5 and 5 hours.

Assignees

• Univ King Saud

Inventors

• Shaddad Maged N
• Arunachalam Prabhakarn
• Almayouf Abdullah M

Classifications

• Y02P20/133

  Renewable energy sources, e.g. sunlight · CPC title

• C25B11/077

  the compound being a non-noble metal oxide · CPC title

• C25B11/069

  consisting of at least one single element and at least one compound; consisting of two or more compounds · CPC title

• C25B11/057

  consisting of a single element or compound · CPC title

• C25B11/051

  Electrodes formed of electrocatalysts on a substrate or carrier · CPC title