MEMS device and method for calibrating a MEMS device

Patent metadata

Field	Value
Publication number	US-10683202-B2
Application number	US-201715810386-A
Country	US
Kind code	B2
Filing date	Nov 13, 2017
Priority date	Nov 22, 2016
Publication date	Jun 16, 2020
Grant date	Jun 16, 2020

Abstract

A microelectromechanical systems (MEMS) device and a method for calibrating a MEMS device. The device includes a first semiconductor substrate including at least one MEMS component. The device also includes an application specific integrated circuit (ASIC) comprising a second semiconductor substrate. The second semiconductor substrate is attached to the first semiconductor substrate. The second semiconductor substrate includes at least one piezoresistive strain gauge. Each piezoresistive strain gauge includes at least one doped semiconductor region having a resistivity that is determined by a strain on said doped semiconductor region. The second semiconductor substrate also includes a circuit for evaluating a trim algorithm for the at least one MEMs component using one or more output values received from the at least one piezoresistive strain gauge.

First claim

The invention claimed is:

1. A microelectromechanical systems (MEMS) device comprising:
a first semiconductor substrate including at least one MEMS component, and
an application specific integrated circuit (ASIC) comprising a second semiconductor substrate,
wherein the second semiconductor substrate is attached to the first semiconductor substrate, and
wherein the second semiconductor substrate comprises:
at least one piezoresistive strain gauge, each piezoresistive strain gauge comprising at least one doped semiconductor region having a resistivity that is determined by a strain on said doped semiconductor region, and
a circuit for evaluating a trim algorithm for the at least one MEMS component using one or more output values received from the at least one piezoresistive strain gauge.

2. The MEMS device of claim 1 , wherein each doped semiconductor region is elongate.

3. The MEMS device of claim 2 , wherein each piezoresistive strain gauge comprises a plurality of elongate doped semiconductor regions extending along different directions within the second semiconductor substrate, for determining a strain component for the trim algorithm in each of said different directions.

4. The MEMS device of claim 3 , wherein each piezoresistive strain gauge comprises at least two elongate doped semiconductor regions extending along substantially orthogonal directions.

5. The MEMS device of claim 3 , wherein each said direction is located within a plane parallel to a major surface of the second semiconductor substrate.

6. The MEMS device of claim 3 , wherein at least one of said piezoresistive strain gauge(s) comprises two elongate doped semiconductor regions arranged in a cross.

7. The MEMS device of claim 3 , wherein at least one of said piezoresistive strain gauge(s) comprises three elongate doped semiconductor regions arranged to form an “H”.

8. The MEMS device of claim 1 , comprising a plurality of said piezoresistive strain gauges, wherein each piezoresistive strain gauge is located in a different part of the second semiconductor substrate for determining a strain value for the trim algorithm in said location.

9. The MEMS device of claim 1 , wherein each doped semiconductor region comprises silicon doped with Boron or Phosphorous.

10. The MEMS device of claim 9 , wherein a doping concentration of said Boron is in the range 10 17 -10 20 .

11. The MEMS device of claim 1 comprising at least one doped semiconductor region having n-type conductivity and at least one doped semiconductor region having p-type conductivity.

12. The MEMS device of claim 1 , wherein said first and second semiconductor substrates form a chip scale package (CSP), and wherein the second semiconductor substrate comprises a plurality of electrical contacts located on a major surface of the second semiconductor substrate for mounting the chip scale package on a surface.

13. The MEMS device of claim 1 , wherein the at least one MEMS component comprises a gyroscope, accelerometer, pressure sensor or timing device.

14. A method for calibrating a microelectromechanical systems (MEMS) device comprising:
outputting from at least one piezoresistive strain gauge of the MEMS device a value indicative of a resistivity of a doped semiconductor region of the at least one piezoresistive strain gauge, wherein a second semiconductor substrate comprises the at least one piezoresistive strain gauge, and
evaluating a trim algorithm for at least one MEMS component of the MEMS device using the output value(s) received from the at least one piezoresistive strain gauge, wherein a first semiconductor substrate comprises the at least one MEMS component, and the second semiconductor substrate is attached to the first semiconductor substrate.

15. The method of claim 14 , wherein the output value(s) received from the at least one piezoresistive strain gauge are indicative of components of strain on the MEMS device in at least two substantially orthogonal directions located within a plane parallel to a major surface of the second semiconductor substrate.

Assignees

• Nxp Usa Inc

Inventors

• Teo Yean Ling
• Geisberger Aaron A
• Cornibert Laurent

Classifications

• H10W74/129

  forming a chip-scale package [CSP] · CPC title

• H10D62/834

  further characterised by the dopants · CPC title

• H10D62/60

  Impurity distributions or concentrations · CPC title

• H10D48/50

  Devices controlled by mechanical forces, e.g. pressure · CPC title

• B81B7/008 Primary

  MEMS characterised by an electronic circuit specially adapted for controlling or driving the same (B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00) · CPC title