Additive manufacturing and integrated impact post-treatment
US-2017326681-A1 · Nov 16, 2017 · US
US10682725B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10682725-B2 |
| Application number | US-201715827024-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 30, 2017 |
| Priority date | Nov 30, 2017 |
| Publication date | Jun 16, 2020 |
| Grant date | Jun 16, 2020 |
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Example implementations relate to techniques for refining the microstructure of metallic materials used for additive manufacturing. An example can involve generating a first layer of an integral object using a material with grains structured in a first arrangement. After a threshold duration occurs since generating the first layer, the example can involve applying an external force to the first layer to cause deformations in the first arrangement of grains. The example can further involve generating a second layer coupled to the first layer of the integral object to form a portion of the integral object. Generating the second layer of the integral object causes the material of the first layer to recrystallize new grains to replace grains proximate the deformations. The grains that result from recrystallization are structured in new arrangement that improves the physical and mechanical properties of the layer and subsequent layers collective.
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What is claimed is: 1. A method comprising: generating a first layer of an integral object having one or more interconnected components, wherein the first layer is generated using a material that comprises a first plurality of grains structured in a first arrangement, and wherein the material is configurable to couple to a subsequent layer generated on the first layer to form a portion of the integral object; after a threshold duration occurs since generating the first layer of the integral object, applying an external force using a first technique to a first portion of the first layer and using a second technique to a second portion of the first layer, wherein an application of the external force causes one or more deformations in the first arrangement of the first plurality of grains of the material, wherein the first technique and the second technique are different, and wherein a type of the first technique and a type of the second technique are based on a size and a shape of the first layer; and generating a second layer coupled to the first layer of the integral object, wherein generating the second layer causes the material of the first layer to recrystallize a second plurality of grains to replace one or more sets of grains of the first plurality of grains proximate the one or more deformations, and wherein the second plurality of grains are structured in a second arrangement that differs from the first arrangement. 2. The method of claim 1 , wherein the material is a metal, and wherein generating the first layer of the integral object comprises using wire feed additive manufacturing. 3. The method of claim 1 , wherein the material is an alloy, and wherein generating the first layer of the integral object comprises using powder feed additive manufacturing. 4. The method of claim 1 , wherein generating the first layer of the integral object with the first plurality of grains structured in the first arrangement comprises depositing the first layer such that a plurality of elongated grains originate from epitaxial growth. 5. The method of claim 4 , wherein generating the first layer of the integral object with the first plurality of grains structured in the first arrangement comprises depositing the first layer such that the elongated grains in the first plurality of grains have columnar orientations that cause the first layer of the material to have anisotropic properties. 6. The method of claim 4 , wherein generating the second layer coupled to the first layer of the integral object comprises depositing the second layer such that the second plurality of grains structured in the second arrangement have respective grain sizes that are less than grain sizes of the plurality of elongated grains in the first plurality of grains. 7. The method of claim 1 , wherein after the threshold duration occurs since generating the first layer of the integral object, applying the external force using the first technique to the first portion of the first layer and using the second technique to the second portion of the first layer comprises: applying the external force to at least one portion of the first layer after a given threshold duration that depends on an amount of time required for the material of the first layer to decrease below a recrystallization temperature for the material of the first layer. 8. The method of claim 1 , wherein generating the second layer coupled to the first layer of the integral object comprises: depositing the second layer such that the second plurality of grains structured in the second arrangement have equiaxed grain structures and random crystal orientations that cause the first layer of the material to have isotropic properties. 9. The method of claim 1 , wherein applying the external force using the first technique to the first portion of the first layer and using the second technique to the second portion of the first layer comprises: applying the external force using a shot peening process, wherein the shot peening process involves projecting a set of physical objects at one or more portions of the first layer of the material to cause the one or more deformations in the first arrangement of the first plurality of grains of the material. 10. The method of claim 1 , wherein applying the external force using the first technique to the first portion of the first layer and using the second technique to the second portion of the first layer comprises: applying the external force using a rotary flapper, wherein the rotary flapper includes one or more flaps configured to cause the one or more deformations in the first arrangement of the first plurality of grains of the material when the rotary flapper is positioned and moved within a threshold distance from the first layer. 11. The method of claim 1 , wherein applying the external using the first technique to the first portion of the first layer and using the second technique to the second portion of the first layer comprises: applying the external force using ultrasonic peening, wherein the ultrasonic peening involves projecting sonic impulses at one or more portions of the first layer of the material to cause the one or more deformations in the first arrangement of the first plurality of grains of the material. 12. The method of claim 1 , wherein applying the external force comprises providing heat to the first layer of the material that stimulates recrystallization at the one or more deformations. 13. The method of claim 1 , wherein generating the second layer coupled to the first layer of the integral object comprises generating the second layer using material that corresponds to the material of the first layer of the integral object. 14. The method of claim 1 , wherein generating the second layer coupled to the first layer of the integral object comprises generating the second layer using a second material that differs from the material of the first layer of the integral object. 15. The method of claim 1 , wherein applying the external force using the first technique to the first portion of the first layer and using the second technique to the second portion of the first layer comprises: applying the external force to a top surface of the first layer of the material to cause a plurality of deformations at a plurality of positions in the first arrangement of the first plurality of grains of the material; and wherein the threshold duration is based on an amount of time required for the material of the first layer to recrystallize the second plurality of grains such that the second plurality of grains replace at least a threshold portion of the first plurality of grains. 16. The method of claim 1 , further comprising: after a second threshold duration occurs since generating the second layer coupled to the first layer of the integral object, applying an external force to at least one portion of the second layer; and generating a third layer coupled to the second layer, wherein generating the third layer causes a material of the second layer to recrystallize a third plurality of grains to replace one or more sets of grains of a given plurality of grains proximate one or more deformations caused by the application of the external force in an arrangement of the given plurality of grains of the material of the second layer, and wherein the third plurality of grains are structured in a third arrangement that is similar to the second arrangement of the second plurality of grains. 17. An apparatus comprising: an integral object having one or more interconnected components, wherein the integral object comprises
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