Magnetic tunnel junction device

Patent metadata

Field	Value
Publication number	US-10680167-B2
Application number	US-201916443875-A
Country	US
Kind code	B2
Filing date	Jun 18, 2019
Priority date	Mar 12, 2004
Publication date	Jun 9, 2020
Grant date	Jun 9, 2020

Abstract

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

First claim

What is claimed is:

1. A method of manufacturing a magnetic tunnel junction (MTJ) device, comprising:
forming a first CoFeB layer that is amorphous;
forming a magnesium oxide (MgO) layer over the first CoFeB layer;
forming a second CoFeB layer that is amorphous over the MgO layer; and
annealing the first and second CoFeB layers and the MgO layer,
wherein the first and second CoFeB layers are crystallized by the annealing, and
wherein the MgO layer is poly-crystalline in which a (001) crystal plane is preferentially oriented.

2. The method of claim 1 ,
wherein after the annealing, the first and second CoFeB layers are entirely crystallized.

3. The method of claim 1 ,
wherein after the annealing, each of the first and second CoFeB layers is poly-crystalline in which a (001) crystal plane is preferentially oriented.

4. The method of claim 1 , wherein after the annealing,
the first and second CoFeB layers are entirely crystallized, and
each of the first and second CoFeB layers is poly-crystalline in which a (001) crystal plane is preferentially oriented.

5. The method of claim 1 ,
wherein after the annealing, each of the first and second CoFeB layers is poly-crystalline in which a (001) crystal plane is preferentially oriented and each of the first and second CoFeB layers includes a BCC (body-centered cubic) structure.

6. The method of claim 1 , wherein after the annealing,
the first and second CoFeB layers are entirely crystallized, and
each of the first and second CoFeB layers is poly-crystalline in which a (001) crystal plane is preferentially oriented and each of the first and second CoFeB layers includes a BCC (body-centered cubic) structure.

7. The method of claim 1 ,
wherein in the forming the MgO layer, the MgO layer is formed as a MgO x (0<x<1) layer.

8. The method of claim 1 ,
wherein in the forming the MgO layer, the value of x in MgO x for the MgO layer is greater than 0 and less than 1.

9. The method of claim 1 ,
wherein in the forming the MgO layer, the MgO layer is formed directly on the first CoFeB layer.

10. The method of claim 1 , wherein:
in the forming the MgO layer, the MgO layer is formed directly on the first CoFeB layer, and
in the forming the second CoFeB layer, the second CoFeB layer is formed directly on the MgO layer.

11. A method of manufacturing a magnetic tunnel junction (MTJ) device, comprising:
forming a first ferromagnetic layer including a first CoFeB layer that is amorphous;
forming a barrier layer including a magnesium oxide (MgO) layer to have a poly-crystalline state in which a (001) crystal plane is preferentially oriented over the first ferromagnetic layer;
forming a second ferromagnetic layer including a second CoFeB layer that is amorphous over the barrier layer; and
annealing the first and second ferromagnetic layers and the barrier layer, to crystallize the first and second CoFeB layers.

12. The method of claim 11 ,
wherein after the annealing, the first and second CoFeB layers are entirely crystallized.

13. The method of claim 11 , wherein after the annealing,
the first and second CoFeB layers are entirely crystallized, and
each of the first and second CoFeB layers is poly-crystalline in which a (001) crystal plane is preferentially oriented and each of the first and second CoFeB layers includes a BCC (body-centered cubic) structure.

14. The method of claim 11 ,
wherein in the forming the barrier layer, the MgO layer is formed as a MgO x (0<x<1) layer.

15. The method of claim 11 , wherein:
in the forming the barrier layer, the barrier layer is formed directly on the first ferromagnetic layer, and
in the forming the second ferromagnetic layer, the second ferromagnetic layer is formed directly on the barrier layer.

Assignees

• Japan Science & Tech Agency
• Aist

Inventors

• Yuasa Shinji

Classifications

• H01L27/222

  Electricity · mapped topic

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• H01L27/22

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title