Optoelectronic semiconductor chip
US-2024204138-A1 · Jun 20, 2024 · US
US10680137B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10680137-B2 |
| Application number | US-201515118979-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2015 |
| Priority date | Feb 26, 2014 |
| Publication date | Jun 9, 2020 |
| Grant date | Jun 9, 2020 |
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Official abstract text for this publication.
An electronic device including: a substrate; a first electrically-conductive layer; a second electrically-conductive layer; and an intermediate layer. The first electrically-conductive layer is disposed on the substrate and composed of aluminum or an aluminum alloy. The second electrically-conductive layer is spaced away from the first electrically-conductive layer. The intermediate layer is disposed between the first electrically-conductive layer and the second electrically-conductive layer, is in contact with both the first electrically-conductive layer and the second electrically-conductive layer, and contains aluminum and fluorine.
Opening claim text (preview).
The invention claimed is: 1. An electronic device, comprising: a substrate; a first electrically-conductive layer disposed on the substrate and composed of aluminum or an aluminum alloy; a second electrically-conductive layer spaced away from the first electrically-conductive layer; an intermediate layer disposed between the first electrically-conductive layer and the second electrically-conductive layer and in direct electrical and physical contact with both the first electrically-conductive layer and the second electrically-conductive layer; and a barrier layer covering a surface of the first electrically-conductive layer, wherein the barrier layer covers the surface of the first electrically-conductive layer other than a part of the surface of the first electrically-conductive layer that is in contact with the intermediate layer, and wherein the intermediate layer contains aluminum and fluorine. 2. The electronic device of claim 1 , wherein the intermediate layer further contains oxygen. 3. The electronic device of claim 1 , wherein the intermediate layer has a thickness of 5 nm or less. 4. The electronic device of claim 1 , further comprising: an electrically-insulating layer deposited over the barrier layer to surround the intermediate layer, wherein the second electrically-conductive layer contacts the intermediate layer in an opening over the intermediate layer that is defined by the electrically-insulating layer. 5. The electronic device of claim 1 , wherein the second electrically-conductive layer is composed of aluminum or an aluminum alloy.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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