Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance

Patent metadata

Field	Value
Publication number	US-10680099-B2
Application number	US-201815898669-A
Country	US
Kind code	B2
Filing date	Feb 19, 2018
Priority date	Feb 19, 2018
Publication date	Jun 9, 2020
Grant date	Jun 9, 2020

Abstract

A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance.

First claim

The invention claimed is:

1. A device comprising:
a substrate with a device region and a top surface;
a gate disposed on the top surface of the substrate in the device region, the gate having a first gate sidewall and a second gate sidewall;
a shallow trench isolation region in the device region, the shallow trench isolation region having a bottom with a first depth relative to the top surface;
a first source/drain (S/D) region disposed adjacent to the first gate sidewall;
a second source/drain (S/D) region disposed adjacent to the second gate sidewall, the second S/D region positioned in the device region between the shallow trench isolation region and the gate;
a device well disposed in the substrate in the device region, the device well surrounding the first S/D region and extending partially under the gate from the first gate sidewall, and the device well having a bottom with a second depth relative to the top surface;
a drift well disposed in the device region, the drift well surrounding the second S/D region and extending under the gate, the drift well abutting the device well, the drift well having a bottom with a third depth relative to the top surface, the third depth is shallower than the second depth, and the third depth is shallower than the first depth; and
a band region disposed below the drift well, the band region including a bottom with a fourth depth relative to the top surface, and the fourth depth is about equal to the second depth.

2. The device of claim 1 , wherein:
the device well and the band region include second polarity type dopants; and
the first S/D region, the second S/D region, and the drift well include first polarity type dopants that are different from the second polarity type dopants.

3. The device of claim 1 , wherein the device well includes second polarity type dopants, and further comprising:
a device isolation well disposed in the substrate, the device isolation well surrounding the device well, the device isolation well including first polarity type dopants to isolate the device well from the substrate,
wherein the second polarity type dopants are different from the first polarity type dopants.

4. The device of claim 3 wherein the device isolation well comprises:
a side isolation well surrounding sides of the device well; and
a buried isolation layer abutting a bottom of the device well and extending under the side isolation well.

5. The device of claim 1 , further comprising:
a well contact coupled to the device well,
wherein the well contact and the first S/D region are butted.

6. The device of claim 1 wherein the second S/D region is displaced laterally from the second gate sidewall.

7. The device of claim 1 , further comprising:
a silicide block disposed on the second gate sidewall, a portion of the gate adjacent to the second gate sidewall, and a portion of the substrate adjacent to the second gate sidewall.

8. The device of claim 1 , wherein the drift well includes an inner drift well edge along a channel width directionof the device region, and the band region comprises an inner band region edge along the channel width direction that is aligned with the inner drift well edge of the drift well.

9. A device comprising:
a substrate with a device region and a top surface;
a gate disposed on the top surface of the substrate in the device region, the gate having a first gate sidewall and a second gate sidewall;
a first source/drain (S/D) region disposed adjacent to the first gate sidewall;
a second source/drain (S/D) region disposed adjacent to the second gate sidewall;
a device well disposed in the substrate in the device region, the device well surrounding the first S/D region and extending partially under the gate from the first gate sidewall, and the device well having a bottom with a device well depth relative to the top surface;
a drift well disposed in the device region, the drift well surrounding the second S/D region and extending under the gate, the drift well abutting the device well, the drift well having a bottom with a drift well depth relative to the top surface, and the drift well depth is shallower than the device well depth; and
a band region disposed below the drift well, the band region including a bottom with a band region depth relative to the top surface, and the band region depth is about equal to the device well depth,
wherein the drift well has an inner drift well edge, the band region includes an inner band region edge along a channel width direction of the device region, the inner band region edge extends farther under the gate than the inner drift well edge of the drift well, a portion of the band region extends farther under the gate than the inner drift well edge, and the portion of the band region has a height that is above the bottom of the drift well.

10. The device of claim 9 , wherein the portion of the band region serves as a halo region to fine tune a gate threshold voltage of the device.

11. A device comprising:
a substrate with a device region and a top surface;
a gate disposed on the top surface of the substrate in the device region, the gate having a first gate sidewall and a second gate sidewall;
a first source/drain (S/D) region disposed adjacent to the first gate sidewall;
a second source/drain (S/D) region disposed adjacent to the second gate sidewall;
a device well disposed in the substrate in the device region, the device well surrounding the first S/D region and extending partially under the gate from the first gate sidewall, and the device well having a bottom with a device well depth relative to the top surface;
a drift well disposed in the device region, the drift well surrounding the second S/D region and extending under the gate, the drift well abutting the device well, the drift well having a bottom with a drift well depth relative to the top surface, and the drift well depth is shallower than the device well depth; and
a band region disposed below the drift well, the band region including a bottom with a band region depth relative to the top surface, and the band region depth is about equal to the device well depth, wherein:
the gate comprises first and second gates, second sidewalls of the first and second gates are adjacent sidewalls with the second S/D region serving as a common second S/D region for the first and second gates,
the first S/D region comprises a third source/drain (S/D) region disposed adjacent to a first sidewall of the first gate, and a fourth source/drain (S/D) region disposed adjacent to a first sidewall of the second gate;
the drift well is disposed in the device region and surrounds the common second S/D region; and
the band region is disposed below the drift well.

12. The device of claim 11 , wherein:
the drift well comprises opposing drift well edges along a channel width direction of the device region; and
the band region comprises opposing band region edges along the channel width direction that are aligned with the opposing drift well edges.

13. The device of claim 11 , wherein:
the drift well comprises opposing drift well edges along a channel width direction of the device region,
the band region comprises opposing band region edges along the channel width direction which extend farther under the first gate and the second gate than the opposing drift well edges, and
portions of the opposing band region edges extend farther under the first gate and the second gate than the opposing drift well edges and extend almost to the top surface of the substrate.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Li Liming
• Zhang Shaoqiang
• Jain Ruchil Kumar
• Purakh Raj Verma

Classifications

• H01L29/6659

  Electricity · mapped topic

• H01L29/0847

  Electricity · mapped topic

• H01L29/4933

  Electricity · mapped topic

• H01L29/7833

  Electricity · mapped topic

• H01L29/7816 Primary

  Electricity · mapped topic