Thermoelectric devices

Patent metadata

Field	Value
Publication number	US-10672968-B2
Application number	US-201514805135-A
Country	US
Kind code	B2
Filing date	Jul 21, 2015
Priority date	Jul 21, 2015
Publication date	Jun 2, 2020
Grant date	Jun 2, 2020

Abstract

An embodiment of a thermoelectric device may include a plurality of thermoelectric cells disposed between first and second planes. Each of the thermoelectric cells may include a thermoelectric element formed from a thermoelectric material of a single semiconductor type, the thermoelectric element including a first end, a second end, and a portion extending from the first end to the second end, the portion extending from the first end to the second end including at least two surfaces that face each other; and at least one conductive element electrically connected to and extending away from the second end of the thermoelectric element toward the first end of the thermoelectric element of another thermoelectric cell. Each thermoelectric cell also may further include an insulating element disposed between the at least two surfaces of the thermoelectric element and between portions of the at least one conductive element.

First claim

What is claimed is:

1. A single-semiconductor thermoelectric device, comprising:
a first substrate;
a second substrate;
a first thermoelectric element of a first semiconductor type having a first planar surface connected to the first substrate, a second planar surface connected to the second substrate, two surfaces oriented at an acute angle to each other, each forming part of a thermoelectric path between the first planar surface and the second planar surface, and an insulating element disposed between the two surfaces oriented at the acute angle to each other;
a second thermoelectric element of the same first semiconductor type as the first thermoelectric element, the second thermoelectric element having a first end contacting the first substrate and a second end contacting the second substrate; and
a conductor extending between the first and second substrates and providing electrical connection from the second planar surface of the first thermoelectric element to the first end of the second thermoelectric element.

2. The single-semiconductor thermoelectric device of claim 1 , wherein the insulating element has a plurality of surfaces supporting the first thermoelectric element.

3. The single-semiconductor thermoelectric device of claim 1 , wherein the conductor extending between the first and second substrates is a first conductor, and the first thermoelectric element further comprises a second conductor disposed at the first planar surface of the first thermoelectric element and separated from the first conductor by the insulating element.

4. The single-semiconductor thermoelectric device of claim 1 , wherein the first planar surface of the first thermoelectric element comprises a flange that protrudes from the two surfaces oriented at the acute angle to each other in at least one direction parallel to the first substrate.

5. The single-semiconductor thermoelectric device of claim 1 , wherein the conductor comprises a portion extending away from the second planar surface of the first thermoelectric element and having a width, in a direction perpendicular to a direction of the portion extending away from the second planar surface of the first thermoelectric element, that is less than half of a width of a portion of the conductor connected to the first thermoelectric element.

6. The single-semiconductor thermoelectric device of claim 1 , wherein the first thermoelectric element comprises a portion extending from the first planar surface to the second planar surface, the portion contacting a plurality of surfaces of the conductor.

7. The single-semiconductor thermoelectric device of claim 1 , wherein the two surfaces oriented at the acute angle to each other are angled relative to the first substrate at an angle of less than 75°.

8. The single-semiconductor thermoelectric device of claim 1 , wherein the two surfaces oriented at the acute angle to each other are angled relative to the first substrate.

9. The single-semiconductor thermoelectric device of claim 1 , wherein the conductor comprises a strip that extends toward the first substrate in a direction angled relative to the first substrate at an angle of less than 75°.

10. The single-semiconductor thermoelectric device of claim 1 , wherein the conductor comprises a strip that extends toward the first substrate in a direction angled relative to the first substrate.

11. The single-semiconductor thermoelectric device of claim 1 , further comprising: a plurality of thermoelectric elements of the first semiconductor type electrically connected in series, the plurality of thermoelectric elements comprising the first and second thermoelectric elements.

12. The single-semiconductor thermoelectric device of claim 1 , wherein the first thermoelectric element of the first semiconductor type comprises bismuth telluride.

13. The single-semiconductor thermoelectric device of claim 1 , wherein the conductor comprises a metal.

14. The single-semiconductor thermoelectric device of claim 2 , wherein the insulating element comprises polyimide.

15. The single-semiconductor thermoelectric device of claim 1 , wherein the first substrate is an integrated circuit substrate, wherein the first and second thermoelectric elements are formed on the integrated circuit substrate.

16. A single-semiconductor thermoelectric device, comprising:
a first substrate;
a second substrate; and
a thermoelectric cell comprising:
a first thermoelectric element of a first semiconductor type comprising a first planar surface connected to the first substrate, and a second planar surface connected to the second substrate, two surfaces oriented at an acute angle to each other, each forming part of a thermoelectric path between the first planar surface and the second planar surface, and an insulating element disposed between the two surfaces oriented at the acute angle to each other;
a second thermoelectric element of the same first semiconductor type as the first thermoelectric element, the second thermoelectric element having a first end connected to the first substrate and a second end connected to the second substrate; and
a conductor extending between the first and second substrates and providing electrical connection from the second planar surface of the first thermoelectric element to the first end of the second thermoelectric element.

17. The single-semiconductor thermoelectric device of claim 16 , wherein the insulating element has a plurality of surfaces supporting the first thermoelectric element.

18. The single-semiconductor thermoelectric device of claim 16 , wherein the first thermoelectric element further comprises a portion extending between the first planar surface and the second planar surface and extending away from the two surfaces oriented at the acute angle to each other in at least one direction parallel to the first substrate.

19. The single-semiconductor thermoelectric device of claim 18 , wherein the portion of the thermoelectric element contacts a plurality of sides of the conductor.

20. A single-semiconductor thermoelectric device, comprising:
a substrate;
a cap; and
a thermoelectric structure for converting thermal energy to electric energy using only a single semiconductor type disposed between the substrate and the cap, the thermoelectric structure comprising a first planar surface connected to the substrate, a second planar surface connected to the cap, two surfaces oriented at an acute angle to each other, each forming part of a thermoelectric path between the first planar surface and the second planar surface, and an insulating element disposed between the two surfaces oriented at the acute angle to each other.

Assignees

• Analog Devices Global

Inventors

• Mcguinness Patrick M
• Berney Helen
• Cornett Jane
• Lane William Alan
• Chen Baoxing

Classifications

• H01L35/32 Primary

  Electricity · mapped topic

• H01L35/18

  Electricity · mapped topic

• H10N10/853 Primary

  comprising arsenic, antimony or bismuth (H10N10/852 takes precedence) · CPC title

• H10N10/17 Primary

  characterised by the structure or configuration of the cell or thermocouple forming the device · CPC title