GaN-based bidirectional switch device

Patent metadata

Field	Value
Publication number	US-10672896-B2
Application number	US-201715695078-A
Country	US
Kind code	B2
Filing date	Sep 5, 2017
Priority date	Dec 2, 2016
Publication date	Jun 2, 2020
Grant date	Jun 2, 2020

Abstract

The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present invention provides a gate-controlled tunneling bidirectional switch device without Ohmic-contact, which avoids a series of negative effects (such as current collapse, incompatibility with traditional CMOS process) caused by the high temperature ohm annealing process. Each insulated gate structure near schottky-contact controls the band structure of the schottky-contact to change the working state of the device, realizing the bidirectional switch's ability of bidirectional conducting and blocking. Due to the only presence of schottky in this invention, no heavy elements such as gold is needed, and this device is compatible with traditional CMOS technology.

First claim

What is claimed is:

1. A GaN-based bidirectional switch device, comprising from bottom to top:
a substrate;
a GaN buffer layer; and
an AlGaN layer;
wherein
the GaN buffer layer and the AlGaN layer form a heterojunction;
a Schottky source electrode structure is located at one end of the GaN-based bidirectional switch device, and a Schottky drain electrode structure is located at an other end of the GaN-based bidirectional switch device;
the Schottky source electrode structure and the Schottky drain electrode structure are symmetrical with respect to a median vertical line of the GaN-based bidirectional switch device;
the Schottky source electrode structure has a grooved Schottky structure comprising a recessed trench formed by etching the AlGaN layer and a part of the GaN buffer layer and a source-Schottky-contact electrode contacting with the GaN buffer layer and covering the recessed trench of the Schottky source electrode structure, a side of the source Schottky-contact electrode contacts the AlGaN layer, the Schottky drain electrode structure has a grooved Schottky structure comprising a recessed trench formed by etching the AlGaN layer and a part of the GaN buffer layer and a drain Schottky-contact electrode contacting with the GaN buffer layer and covering the recessed trench of the Schottky drain electrode structure, a side of the drain Schottky-contact electrode contacts the AlGaN layer;
a first insulated gate structure is located on the AlGaN layer and adjacent to the source Schottky-contact electrode;
a second insulated gate structure is located on the AlGaN layer and adjacent to the drain Schottky-contact electrode;
the first insulated gate structure and the second insulated gate structure are symmetrical with respect to the median vertical line of the GaN-based bidirectional switch device;
the first insulated gate structure comprises a recessed trench formed by etching a part of the AlGaN layer, an insulated gate dielectric covering the recessed trench of the first insulated gate structure, and a first metal gate electrode covering an insulating medium which forms the insulated gate dielectric of the first insulated gate structure;
the second insulated gate structure comprises a recessed trench formed by etching a part of the AlGaN layer, an insulated gate dielectric covering the recessed trench of the second insulated gate structure, and a second metal gate electrode covering an insulating medium which forms the insulated gate dielectric of the second insulated gate structure;
the first metal gate electrode and the source Schottky-contact electrode are separated only by the insulated gate dielectric of the first insulated gate structure;
the second metal gate electrode and the drain Schottky-contact electrode are separated only by the insulated gate dielectric of the second insulated gate structure;
the insulated gate dielectric of the first insulated gate structure directly contacts a top portion and a side portion of the source Schottky-contact electrode and the first metal gate electrode directly contacts the insulated gate dielectric of the first insulated gate structure on both the portions of the insulated gate dielectric of the first insulated gate structure that contact the top portion and the side portion of the source Schottky-contact electrode; and
the insulated gate dielectric of the second insulated gate structure directly contacts a top portion and a side portion of the drain Schottky-contact electrode and the second metal gate electrode directly contacts the insulated gate dielectric of the second insulated gate structure on both the portions of the insulated gate dielectric of the second insulated gate structure that contact the top portion and the side portion of the drain Schottky-contact electrode.

2. The GaN-based bidirectional switch device according to claim 1 , wherein a respective depth of each of the source Schottky-contact electrode and the drain Schottky-contact electrode embedded in the GaN buffer layer is 0.5 um.

3. The GaN-based bidirectional switch device according to claim 1 , wherein the insulated gate dielectrics of the first insulated gate structure and the second insulated gate structure are made; of material selected from a group consisting of SiO 2 , SiN 4 , AlN, Al 2 O 3 , MgO, and Sc 2 O 3 .

Assignees

• Univ Electronic Sci & Tech China

Inventors

• Chen Wanjun
• Shi Yijun
• Liu Jie
• Cui Xingtao
• Hu Guanhao
• Liu Chao
• Zhou Qi
• Zhang Bo

Classifications

• H01L29/4236

  Electricity · mapped topic

• H01L29/41766

  Electricity · mapped topic

• H01L29/205

  Electricity · mapped topic

• H01L29/7786

  Electricity · mapped topic

• H01L29/517

  Electricity · mapped topic