Ruggedized solder mask material

Patent metadata

Field	Value
Publication number	US-10670964-B2
Application number	US-201715819349-A
Country	US
Kind code	B2
Filing date	Nov 21, 2017
Priority date	Nov 21, 2017
Publication date	Jun 2, 2020
Grant date	Jun 2, 2020

Abstract

Disclosed herein are solder mask formulations that include a liquid photo imageable solution and a solution of functionalized diamondoids. Also disclosed are semiconductor fabrication methods that include applying a described solder mask formulation to a semiconductor device.

First claim

What is claimed is:

1. A solder mask formulation, comprising:
a liquid photo imageable solution; and
a solution of functionalized diamondoids, wherein a diamondoid moiety of a functionalized diamondoid of the solution of functionalized diamondoids is selected from the group consisting of: diamantane, triamantane, isotetramantane, pentamantane, cyclohexamantane, and super-adamantane.

2. The solder mask formulation of claim 1 , wherein the functionalized diamondoids include a diamondoid having an acrylate moiety attached thereto.

3. The solder mask formulation of claim 2 , wherein the acrylate includes a diacrylate.

4. The solder mask formulation of claim 3 , wherein the diacrylate includes trimethylolpropane diacrylate.

5. The solder mask formulation of claim 1 , wherein the functionalized diamondoids include a diamondoid having an ether moiety attached thereto.

6. The solder mask formulation of claim 5 , wherein the ether includes trimethylolpropane diglycidyl ether.

7. The solder mask formulation of claim 1 , wherein a matrix resulting from the crosslinking includes an interpenetrating polymer network.

8. The solder mask formulation of claim 7 , wherein the formulation is configured to have a greater chemical resistance based on the interpenetrating polymer network than a chemical resistance of a formulation that lacks the solution of functionalized diamondoids.

9. The solder mask formulation of claim 7 , wherein the formulation is configured to have a greater abrasion resistance based on the interpenetrating polymer network than a chemical resistance of a formulation that lacks the solution of functionalized diamondoids.

10. The solder mask formulation of claim 1 , wherein the functionalized diamondoids represent between approximately 10% and approximately 50% by weight of the solder mask formulation.

11. A solder mask formulation comprising:
a photoinitiator representing approximately 0% to approximately 30% by weight of the solder mask formulation;
a functionalized diamondoid solution representing approximately 10% to approximately 50% by weight of the solder mask formulation; wherein a diamondoid moiety of a functionalized diamondoid of the functionalized diamondoid solution is selected from the group consisting of: diamantane, triamantane, isotetramantane, pentamantane, cyclohexamantane, and super-adamantane.
an ether representing approximately 10% to approximately 30% by weight of the solder mask formulation;
an aromatic representing approximately 0% to approximately 10% by weight of the solder mask formulation;
a sulfate representing approximately 10% to approximately 30% by weight of the solder mask formulation;
an acetate representing approximately 0% to approximately 10% by weight of the solder mask formulation; and
one or more acrylates each representing approximately 1% to approximately 30% by weight of the solder mask formulation.

12. The solder mask formulation of claim 11 , wherein the functionalized diamondoids include a diamondoid having one of an acrylate moiety or an ether moiety attached thereto.

13. A semiconductor fabrication method comprising:
applying a solder mask formulation to a semiconductor device, the solder mask formulation comprising:
a liquid photo imageable solution; and
a solution of functionalized diamondoids, wherein a diamondoid moiety of a functionalized diamondoid of the solution of functionalized diamondoids is selected from the group consisting of: diamantane, triamantane, isotetramantane, pentamantane, cyclohexamantane, and super-adamantane.

14. The semiconductor fabrication method of claim 13 , wherein the functionalized diamondoids include a diamondoid having an acrylate moiety attached thereto.

15. The semiconductor fabrication method of claim 14 , wherein the acrylate includes a diacrylate.

16. The semiconductor fabrication method of claim 13 , wherein the functionalized diamondoids include a diamondoid having an ether moiety attached thereto.

17. The semiconductor fabrication method of claim 13 , wherein a matrix resulting from the crosslinking includes an interpenetrating polymer network.

18. The semiconductor fabrication method of claim 13 , wherein the functionalized diamondoids represent between approximately 10% and approximately 50% by weight of the solder mask formulation.

19. The solder mask formulation of claim 1 , wherein the functionalized diamondoids are configured to crosslink with a resin formed by the liquid photo imageable solution and other functionalized diamondoids upon exposure to actinic radiation.

20. The semiconductor fabrication method of claim 13 , wherein the functionalized diamondoids are configured to crosslink with a resin formed by the liquid photo imageable solution and other functionalized diamondoids upon exposure to actinic radiation.

Assignees

• IBM

Inventors

• Kelly Matthew
• Jeanson Mark
• Kuczynski Joseph

Classifications

• B23K35/0244

  Powders, particles or spheres; Preforms made therefrom · CPC title

• H01L21/4867

  Electricity · mapped topic

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/0047

  characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing · CPC title