Halftone phase shift photomask blank, making method, and halftone phase shift photomask

Patent metadata

Field	Value
Publication number	US-10670957-B2
Application number	US-201715717106-A
Country	US
Kind code	B2
Filing date	Sep 27, 2017
Priority date	Sep 28, 2016
Publication date	Jun 2, 2020
Grant date	Jun 2, 2020

Abstract

During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise. The halftone phase shift film including a layer containing transition metal, silicon and nitrogen is improved in in-plane uniformity of optical properties.

First claim

The invention claimed is:

1. A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film formed thereon, wherein
the halftone phase shift film includes as a part or the entirety thereof a layer containing a transition metal, silicon and nitrogen, said layer includes a region where an atomic ratio of transition metal to the sum of silicon and transition metal, Me/(Si+Me), is up to 0.05, and an atomic ratio of nitrogen to the sum of silicon and nitrogen, N/(Si+N), continuously varies in a range between 0.30 and 0.57 in thickness direction.

2. The halftone phase shift photomask blank of claim 1 wherein the layer containing a transition metal, silicon and nitrogen includes a region where the atomic ratio of nitrogen to the sum of silicon and nitrogen, N/(Si+N), continuously varies in a range between 0.40 and 0.54 in thickness direction.

3. The halftone phase shift photomask blank of claim 1 wherein in the layer containing a transition metal, silicon and nitrogen, the difference between maximum and minimum of the atomic ratio of silicon to the sum of silicon and nitrogen, Si/(Si+N), in thickness direction is up to 0.25.

4. The halftone phase shift photomask blank of claim 1 wherein the layer containing a transition metal, silicon and nitrogen consists of a transition metal, silicon and nitrogen.

5. The halftone phase shift photomask blank of claim 1 wherein the transition metal is molybdenum.

6. A halftone phase shift photomask prepared from the halftone phase shift photomask blank of claim 1 .

7. A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film formed thereon, wherein
the halftone phase shift film includes as a part or the entirety thereof a layer containing a transition metal, silicon and nitrogen wherein an atomic ratio of transition metal to the sum of silicon and transition metal, Me/(Si+Me), is up to 0.05,
the halftone phase shift film exhibits a phase shift of 170 to 190° and a transmittance of 2 to 12% with respect to exposure light of wavelength 193 nm, a difference between maximum and minimum in phase shift in-plane distribution being up to 3°, and a difference between maximum and minimum in transmittance in-plane distribution being up to 5% based on in-plane average value, and has a thickness of up to 67 nm.

8. The halftone phase shift photomask blank of claim 7 wherein the layer containing a transition metal, silicon and nitrogen includes a region where an atomic ratio of nitrogen to the sum of silicon and nitrogen, N/(Si+N), continuously varies in thickness direction.

9. The halftone phase shift photomask blank of claim 8 wherein the layer containing a transition metal, silicon and nitrogen includes a region where the atomic ratio of nitrogen to the sum of silicon and nitrogen, N/(Si+N), continuously varies in a range between 0.30 and 0.57 in thickness direction.

10. The halftone phase shift photomask blank of claim 7 wherein the atomic ratio of transition metal to the sum of silicon and transition metal, Me/(Si+Me), is up to 0.03.

Assignees

• Shinetsu Chemical Co

Inventors

• Kosaka Takuro
• Inazuki Yukio
• Kaneko Hideo

Classifications

• C23C14/34

  Sputtering · CPC title

• C23C14/0089

  in metallic mode · CPC title

• G03F1/32 Primary

  Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof · CPC title

• C23C14/0094

  in transition mode · CPC title

• H10P76/2041

  Photolithographic processes · CPC title