Semiconductor detector and method for packaging the same

Patent metadata

Field	Value
Publication number	US-10670743-B2
Application number	US-201715606394-A
Country	US
Kind code	B2
Filing date	May 26, 2017
Priority date	Aug 31, 2016
Publication date	Jun 2, 2020
Grant date	Jun 2, 2020

Abstract

A semiconductor detector and a packaging method thereof. The semiconductor detector includes: a cathode circuit board including a read out chip, a high voltage side top layer of the cathode circuit board, a bottom connection layer of the cathode circuit board and a dielectric filled between the high voltage side top layer and the bottom connection layer, wherein the high voltage side top layer is connected to the bottom connection layer through a via hole; and a detector crystal including a crystal body, an anode and a cathode, the anode is connected to the read out chip of the cathode circuit board, the high voltage side top layer is connected to an input terminal of the semiconductor detector and the bottom connection layer directly contacts the cathode of the detector crystal to connect the cathode to the cathode circuit board.

First claim

We claim:

1. A semiconductor detector comprising:
a cathode circuit board including a read out chip, a high voltage side top layer, a bottom connection layer and a dielectric filled between the high voltage side top layer and the bottom connection layer, the high voltage side top layer connected to the bottom connection layer through a via hole and coupling an input signal to the semiconductor detector; and
a detector crystal including a crystal body, an anode, and a cathode, the anode connected to the read out chip of the cathode circuit board, and the crystal body is sandwiched between the anode and the cathode circuit board,
wherein the bottom connection layer directly contacts the cathode of the detector crystal to connect the cathode to the cathode circuit board, and
wherein the high voltage side top layer comprises a filter circuit.

2. The semiconductor detector according to claim 1 , wherein the crystal body is a tellurium-zinc-cadmium crystal.

3. The semiconductor detector according to claim 1 , wherein the bottom connection layer contacts the cathode by a conductive adhesive.

4. The semiconductor detector according to claim 1 , wherein the filter circuit utilizes passive filtering.

5. The semiconductor detector according to claim 1 , wherein the filter circuit is at an edge region of the high voltage side top layer.

6. The semiconductor detector according to claim 1 , comprising a plurality of via holes which are evenly arranged.

7. The semiconductor detector according to claim 1 , wherein the high voltage side top layer is connected to an external high voltage source through a solder patch socket or by direct soldering.

8. The semiconductor detector according to claim 1 , wherein the cathode circuit board is a flexible printed circuit board.

9. The semiconductor detector according to claim 8 , wherein the flexible printed circuit board comprises a filter circuit.

10. A method for packaging a semiconductor detector, the semiconductor detector comprising: a cathode circuit board including a read out chip, a high voltage side top layer, a bottom connection layer and a dielectric filled between the high voltage side top layer and the bottom connection layer, the high voltage side top layer connected to the bottom connection layer through a via hole; and a detector crystal including a crystal body, an anode and a cathode, the anode connected to the read out chip of the cathode circuit board, the method comprising:
connecting the cathode to the cathode circuit board by directly contacting the bottom connection layer with the cathode of the detector crystal,
wherein, once the cathode is connected to the cathode circuit board, the detector crystal is sandwiched between the anode and the cathode circuit board, and
wherein the high voltage side top layer is used to couple an input signal to the semiconductor detector, and
wherein the high voltage side top layer comprises a filter circuit to filter a high voltage.

11. The method according to claim 10 , wherein the filter circuit utilizes passive filtering.

12. The method according to claim 10 , wherein the filter circuit is at an edge region of the high voltage side top layer.

13. The method according to claim 10 , wherein the crystal body is a tellurium-zinc-cadmium crystal.

14. The methods according to claim 10 , wherein the bottom connection layer contacts the cathode by a conductive adhesive.

15. The method according to claim 10 , wherein the high voltage side top layer is connected to an external high voltage source through a solder patch socket or by direct soldering.

16. The method according to claim 10 , wherein the cathode circuit board is a flexible printed circuit board.

17. The method according to claim 16 , wherein the flexible printed circuit board comprises a filter circuit.

18. The methods according to claim 10 , wherein the cathode circuit board comprises a plurality of via holes which are evenly arranged.

Assignees

• Nuctech Co Ltd

Inventors

• Zhang Lan
• Du Yingshuai
• Li Bo
• Wu Zonggui
• Li Jun
• Cao Xuepeng
• Hu Haifan
• Gu Jianping
• Xu Guangming
• Liu Bicheng

Classifications

• G01T1/247 Primary

  Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title

• H01L31/0296

  Electricity · mapped topic

• G01T1/241 Primary

  Electrode arrangements, e.g. continuous or parallel strips or the like · CPC title

• H04N5/379

  Electricity · mapped topic

• H01L31/085

  Electricity · mapped topic