Source supplier for a supercritical fluid, substrate processing apparatus having the same

Patent metadata

Field	Value
Publication number	US-10668403-B2
Application number	US-201715482549-A
Country	US
Kind code	B2
Filing date	Apr 7, 2017
Priority date	Jul 29, 2016
Publication date	Jun 2, 2020
Grant date	Jun 2, 2020

Abstract

A source supplier includes a source reservoir that contains a liquefied source fluid for a supercritical process, a vaporizer that vaporizes the liquefied source fluid into a gaseous source fluid under high pressure, a purifier that removes organic impurities and moistures from the gaseous source fluid and an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid. Moisture and organic impurities are removed from the source fluid to reduce the moisture concentration of the supercritical fluid in the supercritical process.

First claim

What is claimed is:

1. An apparatus for processing substrates using a supercritical fluid (SCF) as a process fluid, comprising:
a process chamber that performs a supercritical process on the substrate using the SCF;
a SCF generator that generates the SCF and supplies the SCF to the process chamber; and
a source supplier that supplies a source fluid to the SCF generator,
wherein the source supplier includes:
a source reservoir that contains a liquefied source fluid;
a vaporizer that vaporizes the liquefied source fluid into a gaseous source fluid under high pressure;
a purifier that removes organic impurities and moisture from the gaseous source fluid; and
an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid, wherein the analyzer includes an impurity detector that detects organic impurities in the gaseous source fluid and a moisture detector that detects moisture in the gaseous source fluid.

2. The apparatus of claim 1 , wherein the process chamber includes an upper chamber having a substrate holder, a lower chamber having a blocking plate and a buffer space between the blocking plate and a lower portion thereof, and a chamber driver that combines the upper chamber and the lower chamber wherein insides of the upper chamber and the lower chamber forms a sealed inner space of the process chamber.

3. The apparatus of claim 2 , wherein the process chamber includes an upper hole in an upper portion of the upper chamber that is connected to the SCF generator, a lower hole in a lower portion of the lower chamber that is connected to the SCF generator, and a discharge hole through which supercritical mixtures that are byproducts of the supercritical process are discharged from the process chamber.

4. The apparatus of claim 1 , wherein the purifier includes:
a first filter that filters the organic impurities from the gaseous source fluid, wherein an impurity-filtered source fluid is formed; and
a second filter that filters moisture from the impurity-filtered source fluid, wherein a dehydrated source fluid is formed.

5. The apparatus of claim 4 , wherein the moisture detector includes:
a laser source that generates a continuous wave (CW) laser;
a beam splitter that divides the CW laser into a first split laser and a second split laser;
a detection cell through which the dehydrated source fluid flows and into which the first split laser is irradiated;
a reference cell that contains a gaseous sample fluid in which some moisture is included at a reference concentration and into which the second split laser is irradiated; and
a concentration analyzer that detects the moisture fraction and calculates a moisture concentration in the dehydrated source fluid from a following equation (1):

N
=

k
⁡

(

1

τ
c

-

1

τ
ref

)

(
1
)

wherein, N is a moisture concentration of the dehydrated source fluid, k is a proportionality constant, τ c is a current decay time of an inspection signal when the first split laser is modulated to have a peak wavelength at which the CW laser is maximally absorbed by the moisture and τ ref is a reference decay time of a reference signal when the reference cell is in a vacuum state without any moistures and the second split laser is modulated to have the peak wavelength.

6. The apparatus of claim 5 , wherein the detection cell includes a detection body and a pair of reflection mirrors wherein each is positioned at one end portion of the detection body and each has a different reflectivity, and the reference cell includes a reference chamber, a pair of reflection mirrors each of which is positioned at one end portion of the reference chamber, and a modulator that changes a wavelength of the second split laser.

7. The apparatus of claim 5 , wherein the concentration analyzer includes:
a reference signal analyzer that detects the reference signals corresponding to the second split lasers being transmitted through the reference cell with different wavelengths and obtains a peak point of a peak wavelength at which the CW laser is most absorbed by moisture;
an inspection signal analyzer that detects the inspection signal corresponding to the first split laser being transmitted through the detection cell with the peak wavelength and obtains the current decay time τ c at which a signal intensity is attenuated to a 1% of an initial intensity; and
a concentration operator that stores the reference decay time τ ref and performs the calculation according to equation (1).

8. The apparatus of claim 4 , wherein the first filter includes a high-efficiency particulate arrestance (HEPA) filter and a carbon filter combined into one structure and the second filter includes a dehumidifying agent.

9. The apparatus of claim 1 , wherein the liquefied source fluid includes a liquefied carbon dioxide (CO 2 ) at a pressure of 15 bar to 25 bar and the gaseous source fluid includes a gaseous CO 2 at a pressure of 30 bar to 40 bar.

10. The apparatus of claim 1 , further comprising a flow controller connected to the vaporizer that controls a mass flow of the gaseous source fluid; and
a buffer reservoir interposed between the vaporizer and the flow controller that temporarily stores the gaseous source fluid under an increased pressure.

11. An apparatus for processing substrates using a supercritical fluid (SCF) as a process fluid, comprising:
a process chamber that performs a supercritical process on the substrate using the SCF;
a SCF generator that generates the SCF and supplies the SCF to the process chamber; and
a source supplier that supplies a source fluid to the SCF generator,
wherein the source supplier includes:
a purifier that removes organic impurities and moisture from a gaseous source fluid, wherein the purifier includes a first filter that filters the organic impurities from the gaseous source fluid, wherein an impurity-filtered source fluid is formed, and a second filter that filters moisture from the impurity-filtered source fluid, wherein a dehydrated source fluid is formed; and
an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid, wherein the analyzer includes an impurity detector that detects organic impurities in the impurity-filtered source fluid and a moisture detector that detects moisture in the dehydrated source fluid.

12. The apparatus of claim 11 , wherein the source supplier further comprises:
a source reservoir that contains a liquefied source fluid for a supercritical process; and
a vaporizer that vaporizes the liquefied source fluid into the g

Assignees

• Samsung Electronics Co Ltd

Inventors

• Oh Jung-Min
• Jeong Ji-Hoon
• Han Dong-Gyun
• Lee Kun-Tack
• Lee Hyo-San
• Jun Yong-Myung

Classifications

• H01L21/6719

  Electricity · mapped topic

• B01D11/0407 Primary

  the supercritical fluid acting as solvent for the solute · CPC title

• B01D11/0203

  with a supercritical fluid · CPC title

• B01D11/0411

  the supercritical fluid acting as solvent for the solvent and as anti-solvent for the solute, e.g. formation of particles from solutions · CPC title

• H01L21/67028

  Electricity · mapped topic