Semiconductor device

Patent metadata

Field	Value
Publication number	US-10666166-B2
Application number	US-201916263227-A
Country	US
Kind code	B2
Filing date	Jan 31, 2019
Priority date	Aug 24, 2016
Publication date	May 26, 2020
Grant date	May 26, 2020

Abstract

The present disclosure provides a semiconductor device including a fixed electrode, a movable electrode and an elastic support. The movable electrode faces the fixed electrode and is movable relative to the fixed electrode. The elastic support supports the movable electrode to be movable in an elastic direction of the elastic support. Either one of the fixed electrode or the movable electrode is an electret electrode.

First claim

What is claimed is:

1. A semiconductor device comprising:
a fixed electrode;
a movable electrode facing a main surface of the fixed electrode and being movable relative to the fixed electrode along the main surface; and
a pair of elastic supports supporting the movable electrode from both sides in an elastic direction of the pair of elastic supports to be movable in the elastic direction, wherein
either one of the fixed electrode or the movable electrode is an electret electrode,
each of the fixed electrode and the movable electrode includes electrode parts periodically provided in the elastic direction,
a formation period of the electrode parts included in each of the fixed electrode and the movable electrode is less than twice a movable distance of the movable electrode from a resting state where the movable electrode rests to a compressed state where one of the pair of elastic supports is maximally compressed,
the movable electrode does not overlap the fixed electrode in a front view of the main surface of the fixed electrode when the movable electrode is in the resting state, and
the movable electrode is configured to overlap the fixed electrode when the movable electrode vibrates wherein the fixed electrode is formed on a semiconductor substrate, and the movable electrode directly faces the semiconductor substrate without an intervening layer when the movable electrode is in the resting state.

2. The semiconductor device according to claim 1 , wherein
the electrode parts of the movable electrode are shifted respectively from the electrode parts of the fixed electrode by a half of the formation period in the elastic direction.

3. The semiconductor device according to claim 1 , wherein
the movable electrode and the elastic support are provided integrally and made of a same conductive material.

4. The semiconductor device according to claim 3 , further comprising
a frame connected to the elastic support and supporting the elastic support, wherein
the frame has a trench electrically dividing the frame into a first frame portion and a second frame portion,
the first frame portion is connected to the elastic support, and
the second frame portion is a remaining part of the frame other than the first frame portion.

5. The semiconductor device according to claim 1 , wherein
the electrode parts of the fixed electrode extend in a stripe shape in a direction orthogonal to the elastic direction, and
the electrode parts of the movable electrode extend in a stripe shape in the direction orthogonal to the elastic direction.

6. The semiconductor device according to claim 1 , wherein
the resting state is a state where no external force is applied to the semiconductor device.

7. The semiconductor device according to claim 1 , wherein
the electrode parts included in the fixed electrode are fixed electrode parts,
the electrode parts included in the movable electrode are movable electrode parts, and
when each of the fixed electrode parts and the movable electrode parts has a width of “w”, one of the fixed electrode parts is at a distance of “s” from adjacent one of the movable electrode parts in the elastic direction in the resting state where the movable electrode rests, and each of the pair of elastic supports has a maximum compression amount of “1,” a relationship of w+s<1 is satisfied.

8. The semiconductor device according to claim 1 , wherein
the pair of elastic supports includes a pair of spring elements located on opposite sides of the moveable electrode, respectively,
a braking force is provided by the spring portions to the moveable electrode in a linear direction with respect to a displacement of the moveable electrode when the moveable electrode vibrates,
the braking force is determined based on spring constants of the spring portions,
a dynamic force nonlinear to the displacement of the moveable electrode is added to the braking force when the moveable electrode is displaced by more than a half of the formation period, and
the dynamic force is caused by an electrostatic capacitance between the moveable electrode and the fixed electrode.

Assignees

• Denso Corp
• Univ Of Freiburg

Inventors

• Goda kenta
• Paul Oliver

Classifications

• H01G7/06

  having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors (electrets H01G7/02) · CPC title

• H04R19/005

  using semiconductor materials · CPC title

• H01G7/02

  Electrets, i.e. having a permanently-polarised dielectric · CPC title

• B81B3/00

  Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes (B81B5/00 takes precedence) · CPC title

• H02N1/08 Primary

  with conductive charge carrier, i.e. capacitor machines · CPC title