Semiconductor structure including a suspended membrane containing a central segment of structured thickness

Patent metadata

Field	Value
Publication number	US-10666019-B2
Application number	US-201816053093-A
Country	US
Kind code	B2
Filing date	Aug 2, 2018
Priority date	Aug 3, 2017
Publication date	May 26, 2020
Grant date	May 26, 2020

Abstract

A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

First claim

The invention claimed is:

1. A semiconductor structure, including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer of which forms a suspended membrane above a carrier layer, the suspended membrane comprising:
a central segment, which is tensilely stressed in a plane parallel to the carrier layer; and
a plurality of lateral segments, which are opposite one another with respect to the central segment, and arranged so as to keep the central segment suspended and tensilely stressed along at least two separate deformation axes, the lateral segments having an average width larger than an average width of the central segment, the average width being an average dimension, in a plane parallel to the plane of the carrier layer along an axis that is transverse to said deformation axes;
wherein the central segment comprises at least one zone of thinned thickness, and
wherein the suspended membrane has a direct energy-band structure at least in said thinned zone.

2. The semiconductor structure according to claim 1 , wherein the thickness of the thinned zone is thinned by 20% or more.

3. The semiconductor structure according to claim 1 , wherein a ratio between an area of the thinned zone and an area of the central segment is higher than or equal to 14%.

4. The semiconductor structure according to claim 1 , wherein the crystalline semiconductor compound is based on germanium.

5. The semiconductor structure according to claim 1 , wherein the central segment includes a plurality of thinned zones that are separate from one another and arranged, with respect to one another, so as to form an optical cavity.

6. An optoelectronic device for emitting coherent light, including a semiconductor structure according to claim 5 , the central segment being suitable for forming a gain medium of the optoelectronic device.

7. The optoelectronic device according to claim 6 , wherein the central segment comprises a plurality of thinned zones that are separate from one another and placed beside one another periodically so as to form photonic crystals.

8. The optoelectronic device according to claim 6 , wherein the central segment comprises a first thinned zone encircled by a plurality of thinned zones that are separate from one another and that each have a ring shape encircling the first thinned zone, so as to form a ringed optical cavity.

9. The optoelectronic device according to claim 6 , wherein the central segment comprises at least two thinned zones taking a form of strips that are parallel to one another and that extend longitudinally over the central segment and over two lateral segments that are placed opposite each other with respect to the central segment.

10. A process for fabricating a semiconductor structure according to claim 1 , comprising the following steps:
i) producing a stack which comprises the semiconductor layer covering a sacrificial layer that is placed on the carrier layer, the semiconductor layer having an initial non-zero tensile-stress value;
ii) structuring the semiconductor layer so as to form a structured portion and a peripheral portion;
iii) producing at least one zone of thinned thickness in the central segment; and
iv) producing a cavity under the structured portion and thereby freeing a surface of the carrier layer located facing the structured portion, the central segment then being tensilely stressed with a final value higher than the initial value.

11. The fabricating process according to claim 10 , including at least the following steps:
prior to step i of producing the stack, estimating a minimum tensile-stress value from which the thinned zone of the central segment has a direct energy-band structure for a given value of average thickness of the thinned zone;
in step i, producing the stack so that the semiconductor layer has an initial value lower than the minimum value; and
prior to the structuring step ii, defining the structuring so that, after step iv of producing the cavity, the thinned zone of the central section has a final tensile-stress value higher than or equal to the minimum value, and therefore a direct energy-band structure.

12. The semiconductor structure according to claim 1 , wherein the thickness of the thinned zone is thinned by 50% or more.

13. The semiconductor structure according to claim 1 , wherein a ratio between an area of the thinned zone and an area of the central segment is higher than or equal to 25%.

Assignees

• Commissariat Energie Atomique

Inventors

• Reboud Vincent
• Gassenq Alban
• Tardif Samuel
• Calvo Vincent
• Tchelnokov Alexei

Classifications

• H01S5/1071

  Ring-lasers · CPC title

• B81C1/00158

  Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D67/0039) · CPC title

• H01S5/30

  Structure or shape of the active region; Materials used for the active region · CPC title

• B81B2203/0127

  Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title

• H01S5/3027

  IV compounds · CPC title