Micro-electro-mechanical-systems processing method, and micro-electro-mechanical-systems processing apparatus

Patent metadata

Field	Value
Publication number	US-10662059-B2
Application number	US-201816015640-A
Country	US
Kind code	B2
Filing date	Jun 22, 2018
Priority date	Aug 25, 2017
Publication date	May 26, 2020
Grant date	May 26, 2020

Abstract

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.
The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

First claim

The invention claimed is:

1. A micro-electro-mechanical-systems processing method, comprising:
in a first step,
irradiating a plurality of single field-of-view points with a charged particle beam in a first region of a sample;
measuring a shape of a spot hole formed in the first region of the sample; and
setting, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points; and
in a second step,
irradiating, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

2. The micro-electro-mechanical-systems processing method according to claim 1 , wherein
the first step further comprises setting, as the scan condition, a scan pitch and an irradiation time of the charged particle beam at each of the single field-of-view points based on the measurement results of the shape of the spot hole.

3. The micro-electro-mechanical-systems processing method according to claim 2 , wherein
the first step further comprises calculating a ratio of the scan pitch and the irradiation time at each of the single field-of-view points to the scan pitch and the irradiation at a center of a beam axis of the charged particle beam.

4. The micro-electro-mechanical-systems processing method according to claim 2 ,
wherein the first step further comprises setting, as the scan condition, the scan pitch and the irradiation time of the charged particle beam at the single field-of-view point not irradiated with the charged particle beam, based on the scan pitch and the irradiation time of the charged particle beam at the single field-of-view point irradiated with the charged particle beam.

5. The micro-electro-mechanical-systems processing method according to claim 4 ,
wherein the first step further comprises calculating a ratio of the scan pitch and the irradiation time at the single field-of-view point not irradiated with the charged particle to the scan pitch and the irradiation time at the center of the beam axis of the charged particle beam.

6. The micro-electro-mechanical-systems processing method according to claim 1 ,
wherein the first step further comprises:
irradiating each of the single field-of-view points with the charged particle beam under a plurality of beam conditions; and
setting the scan condition corresponding to each of the plurality of beam conditions.

7. The micro-electro-mechanical-systems processing method according to claim 1 , wherein
in first step further comprises:
irradiating the first region with the charged particle beam formed by the forming mask; and
setting the scan condition in a case of using the same forming mask; and

in second step further comprises:
irradiating the second region of the sample with the charged particle beam formed by the same forming mask as in the first step.

8. The micro-electro-mechanical-systems processing method according to claim 1 , wherein
in first step further comprises measuring the shape of the spot hole by a secondary electron image obtained by irradiation of the charged particle beam from the irradiation unit.

Assignees

• Hitachi Ltd

Inventors

• Watanabe Keiji
• Shichi Hiroyasu
• Sagawa Misuzu
• Mine Toshiyuki
• Ryuzaki Daisuke

Classifications

• B81C99/0025 Primary

  Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002 · CPC title

• H01J2237/31776

  Shaped beam · CPC title

• B81C2201/0143

  Focussed beam, i.e. laser, ion or e-beam · CPC title

• H01J2237/28

  Scanning microscopes · CPC title

• B81C2201/0159

  Lithographic techniques not provided for in B81C2201/0157 · CPC title