Rf circuit with multiple-definition rf substrate and conductive material void under a bias line
US-2016373085-A1 · Dec 22, 2016 · US
US10658983B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10658983-B2 |
| Application number | US-201916526133-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2019 |
| Priority date | Sep 20, 2017 |
| Publication date | May 19, 2020 |
| Grant date | May 19, 2020 |
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An amplifier has an N number of input networks connected to an input terminal to receive an input signal, a first amplifier to amplify one output signal from the N number of input networks, a (N−1) number of secondary amplifiers to amplify the remaining (N−1) number of output signals, except for the one output signal, from the N number of input networks, where the amplification order of the (N−1) number of secondary amplifiers is determined based on the power level of each output signal from the N number of input networks when the first amplifier is operational, an N number of output networks which are arranged, and a first bias network to supply a D.C. bias voltage to at least one of the N number of output networks. An electrical length of the first bias network is less than 90 degrees.
Opening claim text (preview).
The invention claimed is: 1. An amplifier comprising: a first amplifier to amplify an inputted first signal; at least two second amplifiers to amplify at least two of inputted second signals; a first output network connected to an output node of the first amplifier and a node connected to a load; at least two second output networks which are connected to output nodes of the at least two of second amplifiers and which are electrically connected to the node connected to the load; and at least two first bias networks, wherein one of the first bias networks is connected to the first output network and at least one of the first bias networks is connected to at least one of the second output networks to supply D.C. voltages to at least one of the first output network or the second output networks; wherein an electrical length of the first bias networks is less than 90 degrees, the D.C. voltages supplied by the first bias networks have a same voltage level, and an electrical length of at least one of the first output network, the second output networks, or the first bias networks are reconfigurable. 2. The amplifier of claim 1 , wherein at least two of electrical lengths of the first output network, the second output networks, or the first bias networks are different from each other, and at least two of widths of the first output network, the second output networks, or the first bias networks are different from each other. 3. The amplifier of claim 1 , wherein electrical lengths of the first output network and the second output networks are greater or less than 90 degrees. 4. The amplifier of claim 1 , wherein the electrical length of the first output network is set based on transfer characteristics at a fundamental frequency, transfer characteristics at a second harmonic frequency, and transfer characteristics at a third harmonic frequency of the first signal, and the electrical lengths of the second output networks are set based on transfer characteristics at fundamental frequencies, transfer characteristics at second harmonic frequencies, and transfer characteristics at third harmonic frequencies of the second signals. 5. An amplifier comprising: a first amplifier to amplify an inputted first signal; at least two second amplifiers to amplify at least two of inputted second signals; a first output network connected to an output node of the first amplifier and a node connected to a load; at least two second output networks which are connected to output nodes of the at least two of second amplifiers and which are electrically connected to the node connected to the load; a first bias network to supply D.C. voltages to the first output network and the second output networks; and a second bias network connected to the node connected to the load, which has a voltage level different from the D.C. voltage supplied by the first bias network, and wherein an electrical length of the first bias network is less than 90 degrees. 6. The amplifier of claim 5 , wherein the first output network and the second output networks are configured to control a harmonic-impedance. 7. The amplifier of claim 6 , wherein electrical lengths of the first output network and the second output networks are greater or less than 90 degrees. 8. The amplifier of claim 7 , wherein the electrical length of the first output network is set based on transfer characteristics at a fundamental frequency, transfer characteristics at a second harmonic frequency, and transfer characteristics at a third harmonic frequency of the first signal, and the electrical lengths of the second output networks are set based on transfer characteristics at fundamental frequencies, transfer characteristics at second harmonic frequencies, and transfer characteristics at third harmonic frequencies of the second signals. 9. The amplifier of claim 5 , comprising at least two of the first bias networks, wherein one of the first bias networks is connected to the first output network and at least one of first bias networks is connected to at least one of the second output networks, and the D.C. voltages supplied by the first bias networks have a same voltage level. 10. The amplifier of claim 5 , wherein the second bias network is configured to control a harmonic-impedance of the first output network and the second output networks. 11. The amplifier of claim 5 , wherein a voltage level at the second bias network is a ground level. 12. The amplifier of claim 5 , wherein at least two of electrical lengths of the first output network, the second output network, the first bias network, or the second bias network are different from each other, and at least two of widths of the first output network, the second output network, the first bias network, or the second bias network are different from each other. 13. A transmitter comprising: a baseband processor to perform signal processing to a baseband signal; a modulator to modulate the baseband signal by using a local oscillation signal to generate a high-frequency signal; and a high-frequency amplifier to amplify the high-frequency signal and transmit the amplified high-frequency signal to an antenna; wherein the high-frequency amplifier comprises: a first amplifier to amplify an inputted first signal; at least two second amplifiers to amplify at least two of inputted second signals; a first output network connected to an output node of the first amplifier and a node connected to a load; at least two second output networks which are connected to output nodes of the at least two of second amplifiers and which are electrically connected to the node connected to the load; and at least two of first bias networks where one of the first bias networks is connected to the first output network and at least one of the first bias networks is connected to at least one of the second output networks to supply D.C. voltages to at least one of the first output network or the second output networks, wherein an electrical length of the first bias network is less than 90 degrees, the D.C. voltages supplied by the first bias networks have the same voltage level, and an electrical length of at least one of the first output network, the second output networks, or the first bias networks is reconfigurable. 14. The transmitter of claim 13 , wherein at least two of electrical lengths of the first output network, the second output networks or the first bias networks are different from each other, and at least two of widths of the first output network, the second output networks, or the first bias networks are different from each other. 15. The transmitter of claim 13 , wherein electrical lengths of the first output network and the second output networks are greater or less than 90 degrees. 16. The transmitter of claim 13 , wherein the electrical length of the first output network is set based on transfer characteristics at a fundamental frequency, transfer characteristics at a second harmonic frequency, and transfer characteristics at a third harmonic frequency of the first signal, and the electrical lengths of the second output networks are set based on transfer characteristics at fundamental frequencies, transfer characteristics at second harmonic frequencies, and transfer characteristics at third harmonic frequencies of the second signals. 17. The transmitter of claim 15 , comprising a second bias networks connected to the load, the second bias network having a voltage level different from the D.C. voltages supplied by the first bias networks. 18. The transmitter of
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