CEM switching device

Patent metadata

Field	Value
Publication number	US-10658587-B2
Application number	US-201816169372-A
Country	US
Kind code	B2
Filing date	Oct 24, 2018
Priority date	Sep 9, 2016
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

Subject matter herein disclosed relates to a method for the manufacture of a CEM switching device providing that the CEM layer comprises a doped metal compound substantially free from metal wherein ions of the same metal element are present in different oxidation states. The method may provide a CEM layer which is born on and capable of switching with operating voltages below 2.0V.

First claim

The invention claimed is:

1. A method for the manufacture of a CEM switching device, which method comprises forming a conductive substrate and forming a layer of correlated electron material (CEM) on or over the conductive substrate, wherein the forming of the CEM layer comprises forming a layer of a correlated electron material comprising a doped metal compound of a d- or f-block element comprising ions of the same d- or f-block element in different oxidation states and less than 5 atom % of free d- or f-block element, the free d- or f-block element being unbound and in a zero oxidation state.

2. The method according to claim 1 , wherein the doped metal compound comprises two different ions of the same d- or f-block element.

3. The method according to claim 2 , wherein the doped metal compound comprises three different ions of the same d- or f-block element.

4. The method according to claim 1 , wherein the different ions of the same d- or f-block element have oxidation states +2 and +3.

5. The method according to claim 1 , wherein the doped metal compound is a doped nickel oxide comprising Ni 2+ and Ni 3+ ions.

6. The method according to claim 5 , wherein the doped nickel oxide is absent a peak in the X-ray photoelectron spectroscopy spectrum of the CEM layer corresponding to unbound nickel in zero oxidation state.

7. The method according to claim 1 , wherein the doped metal compound is a doped nickel oxide comprising Nit, Ni 2+ and Ni 3+ ions.

8. The method according to claim 1 , further comprising forming a conductive overlay on the CEM layer.

9. The method according to claim 1 , wherein the dopant is carbonyl ligand.

10. The method according to claim 9 , wherein the doped metal compound provides a carbon content of between 10 atom % and 20 atom % in the fully formed device.

11. A method for the manufacture of a CEM switching device, which method comprises forming a layer of correlated electron material (CEM) on a substrate and forming a conductive overlay on the CEM layer, wherein the forming of the CEM layer comprises forming a layer of a correlated electron material comprising a doped metal compound of a d- or f-block element comprising ions of the same d- or f-block element in different oxidation states and less than 5 atom % of free d- or f-block element, the free d- or f-block element being unbound and in a zero oxidation state.

12. The method according to claim 11 , wherein the doped metal compound comprises two different ions of the same d- or f-block element.

13. The method according to claim 12 , wherein the doped metal compound comprises three different ions of the same d- or f-block element.

14. The method according to claim 11 , wherein the different ions of the same d- or f-block element have oxidation states +2 and +3.

15. The method according to claim 11 , wherein the doped metal compound is a doped nickel oxide comprising Ni 2+ and Ni 3+ ions.

16. The method according to claim 15 , wherein the doped nickel oxide is absent a peak in the X-ray photoelectron spectroscopy spectrum of the CEM layer corresponding to unbound nickel in zero oxidation state.

17. The method according to claim 11 , wherein the doped metal compound is a doped nickel oxide comprising Nit, Ni 2+ and Ni 3+ ions.

18. The method according to claim 17 , wherein the doped nickel oxide is absent a peak in the X-ray photoelectron spectroscopy spectrum of the CEM layer corresponding to unbound nickel in zero oxidation state.

19. The method according to claim 11 , wherein the substrate is a conductive substrate.

20. The method according to claim 11 , wherein the dopant is carbonyl ligand.

21. The method according to claim 20 , wherein the doped metal compound provides a carbon content of between 10 atom % and 20 atom % in the fully formed device.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Reid Kimberly Gay
• Shifren Lucian
• Paz De Araujo Carlos Alberto
• Celinska Jolanta Bozena

Classifications

• G11C13/0007 Primary

  comprising metal oxide memory material, e.g. perovskites · CPC title

• H01L45/146 Primary

  Electricity · mapped topic

• H01L45/1641

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic

• H01L45/1625

  Electricity · mapped topic