Insulated gate bipolar transistor and diode

Patent metadata

Field	Value
Publication number	US-10658499-B2
Application number	US-201816208049-A
Country	US
Kind code	B2
Filing date	Dec 3, 2018
Priority date	Jul 6, 2016
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor layer having a first principal surface on one side and a second principal surface on the other side;
a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer;
an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer;
a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer;
a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer; and
a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer and having a line-shaped pattern including a first line extending along a first direction and a second line extending along a second direction intersecting the first direction and connected to the first line as viewed in plan,
wherein the line-shaped pattern of the cathode region includes a pattern extending in a meandering form as viewed in plan.

2. The semiconductor device according to claim 1 , wherein the cathode region is formed in non-uniform pattern at the second principal surface of the semiconductor layer.

3. The semiconductor device according to claim 1 , wherein the second principal surface of the semiconductor layer has a first region where only the collector region is formed, and a second region where the collector region and the cathode region are formed, and
the first region is set at a peripheral edge portion of the second principal surface of the semiconductor layer.

4. The semiconductor device according to claim 1 , wherein the second principal surface of the semiconductor layer has a first region where only the collector region is formed, and a second region where the collector region and the cathode region are formed, and
the first region is set at a central portion of the second principal surface of the semiconductor layer.

5. The semiconductor device according to claim 1 , further comprising:
an insulating film formed at the first principal surface of the semiconductor layer so as to face the channel region; and
a gate electrode formed on the insulating film so as to face the channel region across the insulating film.

6. The semiconductor device according to claim 5 , further comprising a gate pad formed at the first principal surface of the semiconductor layer so as to be electrically connected to the gate electrode,
wherein the cathode region is formed in a region outside a region facing the gate pad in the second principal surface of the semiconductor layer.

7. The semiconductor device according to claim 1 , wherein the line-shaped pattern of the cathode region includes a plurality of first lines extending along the first direction and formed at intervals along the second direction, and the second line connected to the first lines adjacent mutually.

8. The semiconductor device according to claim 1 , further comprising a collector electrode formed at the second principal surface of the semiconductor layer and electrically connected to the collector region and the cathode region.

9. The semiconductor device according to claim 1 , wherein
the semiconductor layer has an active region,
the collector region is formed in the active region, and
the cathode region is formed in the active region.

10. The semiconductor device according to claim 9 , wherein a ratio S K /S A of an area S K of the cathode region with respect to an area S A of the active region is less than a ratio S C /S A of an area S C of the collector region with respect to the area S A of the active region.

11. The semiconductor device according to claim 10 , wherein the ratio S K /S A is equal to or less than 0.1.

12. A semiconductor device comprising:
a semiconductor layer having a first principal surface on one side and a second principal surface on the other side;
a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer;
an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer;
a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer;
a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer; and
a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer and having a line-shaped pattern including a first line extending along a first direction and a second line extending along a second direction intersecting the first direction and connected to the first line as viewed in plan,
wherein the line-shaped pattern of the cathode region includes a pattern extending in a comb teeth form as viewed in plan.

13. The semiconductor device according to claim 12 , wherein the cathode region is formed in non-uniform pattern at the second principal surface of the semiconductor layer.

14. The semiconductor device according to claim 12 , further comprising:
an insulating film formed at the first principal surface of the semiconductor layer so as to face the channel region; and
a gate electrode formed on the insulating film so as to face the channel region across the insulating film.

15. The semiconductor device according to claim 14 , further comprising a gate pad formed at the first principal surface of the semiconductor layer so as to be electrically connected to the gate electrode,
wherein the cathode region is formed in a region outside a region facing the gate pad in the second principal surface of the semiconductor layer.

16. A semiconductor device comprising:
a semiconductor layer having a first principal surface on one side and a second principal surface on the other side;
a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer;
an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer;
a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer;
a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer; and
a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer and having a line-shaped pattern including a first line extending along a first direction and a second line extending along a second direction intersecting the first direction and connected to the first line as viewed in plan,
wherein the line-shaped pattern of the cathode region includes a pattern extending in a spiral form as viewed in plan.

17. The semiconductor device according to claim 16 , wherein the cathode region is formed in non-uniform pattern at the second principal surface of the semiconductor layer.

18. The semiconductor device according to claim 16 , further comprising:
an insulating film formed at the first principal surface of

Assignees

• Rohm Co Ltd

Inventors

• Shinsho Kohei

Classifications

• H01L29/41716

  Electricity · mapped topic

• H01L29/7393

  Electricity · mapped topic

• H01L29/083

  Electricity · mapped topic

• H01L29/66348

  Electricity · mapped topic

• H01L29/0834

  Electricity · mapped topic