Light detection device

Patent metadata

Field	Value
Publication number	US-10658415-B2
Application number	US-201716315708-A
Country	US
Kind code	B2
Filing date	Jul 26, 2017
Priority date	Jul 27, 2016
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

First claim

The invention claimed is:

1. A photodetecting device comprising:
a semiconductor substrate including a first principal surface and a second principal surface that oppose each other;
a plurality of avalanche photodiodes each including a light receiving region disposed at the first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and operating in Geiger mode; and
a through-electrode electrically connected to a corresponding light receiving region,
wherein the through-electrode is provided in a through-hole penetrating through the semiconductor substrate in a thickness direction in an area where the plurality of avalanche photodiodes are arranged two-dimensionally,
at the first principal surface of the semiconductor substrate, a groove surrounding the through-hole is formed in an area between the through-hole and the light receiving region adjacent to the through-hole, and
a first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between an edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

2. The photodetecting device according to claim 1 , wherein each of the avalanche photodiodes includes:
a first semiconductor region of a first conductivity type located at the first principal surface of the semiconductor substrate;
a second semiconductor region of a second conductivity type located at the second principal surface of the semiconductor substrate;
a third semiconductor region of the second conductivity type located between the first semiconductor region and the second semiconductor region and having a lower impurity concentration than the second semiconductor region; and
a fourth semiconductor region of the first conductivity type formed in the first semiconductor region and having a higher impurity concentration than the first semiconductor region,
wherein the fourth semiconductor region is the light receiving region, and
a bottom surface of the groove is constituted by the second semiconductor region.

3. The photodetecting device according to claim 1 , wherein each of the avalanche photodiodes includes:
a first semiconductor region of a first conductivity type located at the first principal surface of the semiconductor substrate;
a second semiconductor region of the first conductivity type located at the second principal surface of the semiconductor substrate and having a higher impurity concentration than the first semiconductor region;
a third semiconductor region of a second conductivity type formed at the first principal surface of the first semiconductor region; and
a fourth semiconductor region of the first conductivity type formed in the first semiconductor region to be in contact with the third semiconductor region, and having a higher impurity concentration than the first semiconductor region,
wherein the third semiconductor region is the light receiving region, and
a bottom surface of the groove is constituted by the second semiconductor region.

4. The photodetecting device according to claim 1 , further comprising:
an electrode pad disposed on the first principal surface and electrically connected to the through-electrode,
wherein, when viewed from a direction perpendicular to the first principal surface, the electrode pad is located in an area surrounded by the groove and spaced apart from the groove.

5. The photodetecting device according to claim 1 , wherein, when viewed from a direction perpendicular to the first principal surface, an area surrounded by the groove has a polygonal shape, and the light receiving region has a polygonal shape.

6. The photodetecting device according to claim 1 , wherein, when viewed from a direction perpendicular to the first principal surface, an opening of the through-hole has a circular shape, and
an insulating layer is arranged on the inner peripheral surface of the through-hole.

7. The photodetecting device according to claim 1 , wherein the plurality of avalanche photodiodes are arranged in a matrix,
the through-hole is formed in each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes,
the through-hole is provided with the through-electrode electrically connected to the light receiving region of one of the four mutually adjacent avalanche photodiodes, and
the groove is formed in an area between the through-hole and the light receiving region of each of the four mutually adjacent avalanche photodiodes.

8. The photodetecting device according to claim 7 , wherein, when viewed from a direction perpendicular to the first principal surface, the light receiving region has a polygonal shape, and
when viewed from the direction perpendicular to the first principal surface, the groove extends along a side adjacent to the through-hole, of a plurality of sides of the light receiving region of each of the four avalanche photodiodes adjacent to the through-hole.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Ishida Atsushi
• HOSOKAWA Noburo
• Nagano Terumasa
• Baba Takashi

Classifications

• H01L31/022416

  Electricity · mapped topic

• H01L27/14636 Primary

  Electricity · mapped topic

• H01L31/107

  Electricity · mapped topic

• H10W20/216

  characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes · CPC title

• H10W20/2125

  Top-view shapes · CPC title