Miniature gas sensor

Patent metadata

Field	Value
Publication number	US-10656129-B2
Application number	US-201715837227-A
Country	US
Kind code	B2
Filing date	Dec 11, 2017
Priority date	Dec 11, 2017
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

The present invention provides a miniature gas sensor, which comprises a gas sensor chip. The gas sensor chip includes a hollow structure on the back. An insulating layer is disposed below the sensing material. A miniature heating device is disposed surrounding the sensing material. The sensing material is adhered to the sensing electrodes. The sensing material includes two metal oxide semiconductors or a compound structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxide layers for increasing the efficiency in sensing gas. The gas sensor according to the present invention can be implemented on silicon substrate with hollow structures. In addition, the size of the chip can be miniaturized.

First claim

What is claimed is:

1. A miniature gas sensor, comprising a substrate, a dielectric layer, and a sensing layer, said dielectric layer disposed on said substrate, a heating device and two electrodes buried in said dielectric layer and electrically isolated from each other, said sensing layer disposed on said heating device and connected with said two electrodes, wherein said sensing layer is formed by a first metal oxide layer and a reaction layer, said reaction layer is disposed on said first metal oxide layer and the surface of said reaction layer is a rough surface to increase the contact area of said reaction layer for sensing gas, part of said electrodes is extended toward the top of said dielectric layer and supports said sensing layer to separate said sensing layer from said dielectric layer; wherein said first metal oxide layer is used as a conductor for conducting electrons of said sensing layer.

2. The miniature gas sensor of claim 1 , wherein said heating device and said two electrodes are further disposed on said dielectric layer.

3. The miniature gas sensor of claim 1 , wherein said substrate is a discontinuous structure such that said dielectric layer is disposed on said substrate with hollow portions and producing a heat dissipating region not contacting directly with said substrate.

4. The miniature gas sensor of claim 1 , wherein the material of said reaction layer is selected from the group consisting of lanthanum carbonate and nanometer gold.

5. The miniature gas sensor of claim 1 , wherein the material of said first metal oxide layer is selected from the group consisting of tungsten oxide, zinc oxide, and tin oxide, and the material of tungsten oxide is tungsten trioxide and the material of tin oxide is tin dioxide.

6. The miniature gas sensor of claim 1 , wherein the material of said heating device is selected from the group consisting of titanium, gold, platinum, silver, and tantalum.

7. The miniature gas sensor of claim 1 , wherein the material of said dielectric layer is selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride.

8. A miniature gas sensor, comprising a substrate, a dielectric layer, and a sensing layer, said dielectric layer disposed on said substrate, a heating device and two electrodes buried in said dielectric layer and electrically isolated from each other, said sensing layer disposed on said heating device and connected with said two electrodes, and said sensing layer is formed by a first metal oxide layer, a second metal oxide layer and a reaction layer disposed on the second metal oxide layer, wherein part of said electrodes is extended toward the top of said dielectric layer and supports said sensing layer to separate said sensing layer from said dielectric layer, said first metal oxide layer is disposed on said second metal oxide layer, and an interface layer is sandwiched between said first metal oxide layer and said second metal oxide layer to facilitate the conduction of electrons to said electrodes at said second metal oxide layer; the material of said first metal oxide layer and said second metal oxide layer is selected from the group consisting of zinc oxide, tungsten oxide, and tin oxide; and the material of tungsten oxide is tungsten trioxide and the material of tin oxide is tin dioxide.

9. The miniature gas sensor of claim 8 , wherein the surface of said first metal oxide layer is a rough surface.

10. The miniature gas sensor of claim 8 , wherein said heating device and said two electrodes are further disposed on said dielectric layer.

11. The miniature gas sensor of claim 8 , wherein said substrate is a discontinuous structure such that said dielectric layer is disposed on said substrate with hollow portions and producing a heat dissipating region not contacting directly with said substrate.

12. The miniature gas sensor of claim 8 , wherein the material of said heating device is selected from the group consisting of titanium, gold, platinum, silver, and tantalum.

13. The miniature gas sensor of claim 8 , wherein the material of said dielectric layer is selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride.

14. The miniature gas sensor of claim 8 , wherein said first metal oxide layer further includes a nanometer metal layer on the surface of the first metal oxide layer.

15. The miniature gas sensor of claim 8 , wherein said interface layer is formed by thermal diffusion and phase change in the tungsten oxide and tin oxide of said first metal oxide layer and said second metal oxide layer.

16. A miniature gas sensor, comprising a substrate, two dielectric layers, and a sensing layer, said dielectric layer disposed on said substrate, a heating device and two electrodes buried in said dielectric layer and electrically isolated from each other, said sensing layer disposed on said heating device and connected with said two electrodes, wherein said sensing layer is formed by at least one metal oxide layer and a reaction layer disposed on said at least one metal oxide layer, the stress of said two dielectric layers are between 1 MPa and 20 MPa, the compressive and tensile stress on said two dielectric layers are balanced by said two dielectric layers, part of said electrodes is extended toward the top of said dielectric layer and supports said sensing layer to separate said sensing layer from said dielectric layer.

17. The miniature gas sensor of claim 16 , wherein the material of said sensing layer is tin oxide or tungsten oxide, and the material of tungsten oxide can be tungsten trioxide and the material of tin oxide can be tin dioxide.

18. The miniature gas sensor of claim 16 , wherein the material of said dielectric layer is selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride.

19. The miniature gas sensor of claim 16 , wherein the surface of said at least one metal oxide layer is a rough surface.

20. The miniature gas sensor of claim 16 , wherein said at least one metal oxide layer further includes a nanometer metal layer on the surface.

21. The miniature gas sensor of claim 20 , wherein the material of said nanometer metal layer is selected from the group consisting of titanium, gold, platinum, silver, palladium, and tantalum.

22. The miniature gas sensor of claim 16 , wherein the thickness of said dielectric layer is between 2000 and 25000 angstroms.

Assignees

• Nat Applied Res Laboratories

Inventors

• Hsueh Ting-Jen
• Hsiao Yu-Jen
• Lin Yu-Te
• Li Yen-Hsi
• Chen Yung-Hsiang
• Shieh Jia-Min

Classifications

• G01N27/123

  for controlling the temperature (temperature control per se G05D23/00) · CPC title

• G01N27/626

  using heat to ionise a gas · CPC title

• G01N27/125

  Composition of the body, e.g. the composition of its sensitive layer · CPC title

• G01N21/3504

  for analysing gases, e.g. multi-gas analysis · CPC title

• G01N21/359

  using near infrared light · CPC title