Compact, power-efficient stacked broadband optical emitters

Patent metadata

Field	Value
Publication number	US-10656014-B2
Application number	US-201515512977-A
Country	US
Kind code	B2
Filing date	Sep 23, 2015
Priority date	Sep 23, 2014
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected wavelength or narrow range of wavelengths to pass through.

First claim

What is claimed is:

1. A broadband optical emission device comprising:
a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of different respective wavelength;
a light source operable to provide pumping for stimulated photon emission from the stack,
wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and
wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer.

2. The device of claim 1 wherein at least some of the light generated by each particular one of the semiconductor layers, other than the last semiconductor layer, provides pumping for stimulated photon emission from other semiconductor layers that are further from the light source.

3. The device of claim 1 wherein each of the semiconductor layers has a respective band gap energy, and wherein the semiconductor layers are in the stack such that the semiconductor layer having the highest bandgap energy is closest to the light source.

4. The device of claim 1 wherein each of the semiconductor layers has a respective band gap energy, and wherein the semiconductor layers are in the stack such that the semiconductor layer having the lowest bandgap energy is closest to the light source.

5. The device of claim 1 wherein each of the semiconductor layers comprises a III-V compound semiconductor including one or more of Ga, In, As, P.

6. The device of claim 5 further including one or more InP transition layers between the semiconductor layers in the stack.

7. The device of claim 1 further including one or more transition layers each of which provides a smooth transition in lattice constant between the semiconductor layers in the stack.

8. The device of claim 7 wherein each particular one of the one or more transition layers is at least partially transparent to the light generated by the semiconductor layers that are closer to the light source than the particular transition layer.

9. The device of claim 1 wherein the light source is operable to emit light of a wavelength less than wavelengths of light emitted by the semiconductor layers.

10. The device of claim 1 further including a partially reflective layer and/or a distributed feedback element operable to allow some of the light to pass to outside the broadband emission device and to reflect some of the light back into the stack so as to generate further stimulated optical emission from one or more of the semiconductor layers.

11. The device of claim 1 further including a reflector that reflects stray light away from the stack of semiconductor layers.

12. The device of claim 11 wherein the light source comprises at least one of a light emitting diode, a laser diode, or a vertical cavity surface emitting laser (VCSEL) operable to emit light at an energy higher than a band-gap energy of any of the semiconductors layers.

13. A spectrometer comprising:
a broadband optical emission device as recited in claim 1 operable to emit the light generated by the stack of semiconductor layers toward a sample; and
a light detector operable to sense optical signals based on a portion of the light that passes through the sample or is reflected by the sample.

Assignees

• Ams Sensors Singapore Pte Ltd

Inventors

• Riel Peter
• Roentgen Peter

Classifications

• H01S5/183

  having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title

• H01S5/0071

  for beam steering, e.g. using a mirror outside the cavity to change the beam direction · CPC title

• H01S5/4043

  with vertically stacked active layers · CPC title

• H01S5/34313

  with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title

• G01J3/26

  using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters · CPC title