Bulk acoustic wave resonator on a stress isolated platform

Patent metadata

Field	Value
Publication number	US-10651817-B2
Application number	US-201715857906-A
Country	US
Kind code	B2
Filing date	Dec 29, 2017
Priority date	Dec 29, 2017
Publication date	May 12, 2020
Grant date	May 12, 2020

Abstract

In described examples of a micromechanical system (MEMS), a rigid cantilevered platform is formed on a base substrate. The cantilevered platform is anchored to the base substrate by only a single anchor point. A MEMS resonator is formed on the cantilevered platform.

First claim

What is claimed is:

1. An integrated circuit package, comprising:
an integrated circuit (IC) die including semiconductor circuitry formed thereon;
a micromechanical system (MEMS) die mounted on the IC die; the MEMS die including a first portion and a second portion, the second portion including a cantilevered platform attached to the first portion, the first portion and the second portion composed of a same material; and
a MEMS resonator directly attached to the cantilevered platform, the cantilevered platform including a distal end interfacing with the first portion and a proximal end opposite the distal end, wherein the MEMS resonator is directly attached proximal to the distal end, and wherein the distal end interfacing with the first portion includes silicon.

2. The integrated circuit package of claim 1 , wherein the resonator is one of a thin film bulk acoustic resonator (FBAR), a solidly mounted resonator (SMR), or a plane acoustic wave (PAW) resonator.

3. The integrated circuit package of claim 1 , wherein the resonator is an acoustic resonator.

4. The integrated circuit package of claim 1 , further comprising an encapsulation material positioned in contact with portions of the MEMS die and the IC die.

5. The integrated circuit package of claim 4 , further comprising an elastic material positioned between the encapsulation material and the MEMS resonator.

6. A semiconductor package comprising:
a first die including a first portion and a second portion, the second portion including a cantilevered platform attached to the first portion, the first portion and the second portion composed of a same material; and
a resonator directly attached to the cantilevered platform, the cantilevered platform including a distal end interfacing with the first portion and a proximal end opposite the distal end, wherein the resonator is directly attached to the cantilevered platform proximal to the distal end.

7. The semiconductor package of claim 6 , wherein the first portion and the second portion are composed of Silicon.

8. The semiconductor package of claim 6 , wherein the resonator is one of a bulk acoustic wave (BAW) resonator, a thin film bulk acoustic resonator (FBAR), a solidly mounted resonator (SMR), and a plane acoustic wave (PAW) resonator.

9. The semiconductor package of claim 6 further comprising a cavity in between a part of the first portion and in between an edge of the cantilevered platform and an edge of the second portion.

10. The semiconductor package of claim 6 , wherein a surface of the cantilevered platform is perpendicular to a surface of a side of the first die.

11. The semiconductor package of claim 6 , wherein surfaces of the first portion and the second portion are coplanar.

12. The semiconductor package of claim 6 further comprising an encapsulation material positioned in contact with the first die.

13. The semiconductor package of claim 12 further comprising an elastic material positioned between the encapsulation material and the resonator.

14. The semiconductor package of claim 12 further comprising a cavity die positioned between the encapsulation material and the resonator.

15. The semiconductor package of claim 6 further comprising a second die attached to, and electrically connected to, the first die.

16. The semiconductor package of claim 15 further comprising a lead frame attached to the second die and electrically connected to the first die and the second die.

17. A semiconductor package, comprising:
an integrated circuit (IC) die;
a micromechanical system (MEMS) die mounted on the IC die, the MEMS die including a first portion and a second portion, the second portion including a distal end and a proximal end, the proximal end attached to the first portion, wherein the first portion and the second portion are composed of a same material; and
a resonator directly attached proximate to the distal end than the proximal end.

18. The semiconductor package of claim 17 , wherein the second portion includes a cantilevered platform.

19. The semiconductor package of claim 18 , wherein the distal end forms a substantial part of the cantilevered platform.

20. The semiconductor package of claim 17 , wherein the resonator is one of a bulk acoustic wave (BAW) resonator, a thin film bulk acoustic resonator (FBAR), a solidly mounted resonator (SMR), and a plane acoustic wave (PAW) resonator.

21. The semiconductor package of claim 17 further comprising an encapsulation material positioned in contact with the IC die and the MEMS die.

22. The semiconductor package of claim 21 further comprising a stress buffer layer positioned between the encapsulation material and the resonator.

23. The semiconductor package of claim 21 further comprising a cavity die positioned between the encapsulation material and the resonator.

24. The semiconductor package of claim 17 , wherein the first portion and the second portion are composed of Silicon.

Assignees

• Texas Instruments Inc

Inventors

• Yen Ting-Ta
• Goodlin Brian
• Jackson Ricky Alan
• Dellas Nicholas Stephen

Classifications

• B81B2203/0118

  Cantilevers · CPC title

• H03H3/0073

  Integration with other electronic structures · CPC title

• H03H9/02133

  of stress · CPC title

• B81B2207/012

  the micromechanical device and the control or processing electronics being separate parts in the same package · CPC title

• H03H9/0547

  consisting of a vertical arrangement (H03H9/0566 takes precedence) · CPC title