Method and apparatus for monitoring motor current for an electric valve positioner
US-9219442-B2 · Dec 22, 2015 · US
US10651780B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10651780-B2 |
| Application number | US-201515513627-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 2, 2015 |
| Priority date | Sep 24, 2014 |
| Publication date | May 12, 2020 |
| Grant date | May 12, 2020 |
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A method for operating a circuit system having at least three control stages for at least three phases, each of the control stages having a high-side switch and a low-side switch, each of the high-side switches and each of the low-side switches being capable of being brought into an electrically conductive state and into an electrically non-conductive state, a quantity being determined that influences the temperature of the high-side switches and/or of the low-side switches, either the high-side switches or the low-side switches being selected in a group as a function of the quantity influencing the temperature, and the selected high-side switches or low-side switches being controlled in a freewheeling phase in such a way that the selected high-side switches or low-side switches form a freewheel during the freewheeling phase.
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What is claimed is: 1. A method for operating a circuit system having at least three control stages for at least three phases, each of the control stages having a high-side switch and a low-side switch, each of the high-side switches and each of the low-side switches being capable of being brought into an electrically conductive state and into an electrically non-conductive state, the method comprising: determining a quantity that influences a temperature of at least one of the high-side switches and the low-side switches; selecting, in groups, either the high-side switches or the low-side switches as a function of the quantity influencing the temperature; and controlling the selected high-side switches or low-side switches in a freewheeling phase, so that the selected high-side switches or low-side switches form a freewheel during the freewheeling phase; wherein the high-side switches are situated and mounted in a center segment of a semiconductor module, and the low-side switches are situated and mounted in an edge segment of the semiconductor module, so that the high-side switches have a better cooling connection to the semiconductor module than the low-side switches, wherein the edge segment and the center segment are separate from one another on the semiconductor module, wherein the center segment has a larger surface area than does the edge segment, and wherein the semiconductor module is an integrated circuit, wherein the semiconductor module is on a semiconductor substrate, and wherein the high-side switches are formed as p-channel semiconductor switching elements having a larger surface than the low-side switches, which are formed as n-channel semiconductor switching elements, so as to improve heat dissipation of the high-side switches. 2. The method as recited in claim 1 , wherein during the freewheeling phase, the selected high-side switches or low-side switches that form the freewheel are in a conductive state, and the other of the high-side switches or low-side switches are in a non-conductive state. 3. The method as recited in claim 1 , wherein at least one of: a power loss, a current, and a temperature of at least one of the high-side switches and the low-side switches is determined as the quantity influencing the temperature. 4. The method as recited in claim 1 , wherein during the selecting in groups, the quantity influencing the temperature is compared to a temperature boundary value, and when there is an exceeding of the temperature boundary value, the high-side switches or low-side switches are selected that do not exceed the temperature boundary value. 5. The method as recited in claim 1 , wherein the temperature-influencing quantity of the high-side switches and of the low-side switches is determined, and the high-side switches or low-side switches having the lower temperature-influencing quantity are selected. 6. A computing unit for operating a circuit system having at least three control stages for at least three phases, each of the control stages having a high-side switch and a low-side switch, each of the high-side switches and each of the low-side switches being capable of being brought into an electrically conductive state and into an electrically non-conductive state, comprising: a computing device configured to perform the following: determine a quantity that influences a temperature of at least one of the high-side switches and the low-side switches; select, in groups, either the high-side switches or the low-side switches as a function of the quantity influencing the temperature; and control the selected high-side switches or low-side switches in a freewheeling phase, so that the selected high-side switches or low-side switches form a freewheel during the freewheeling phase; wherein the high-side switches are situated and mounted in a center segment of a semiconductor module, and the low-side switches are situated and mounted in an edge segment of the semiconductor module, so that the high-side switches have a better cooling connection to the semiconductor module than the low-side switches, wherein the edge segment and the center segment are separate from one another on the semiconductor module, wherein the center segment has a larger surface area than does the edge segment, and wherein the semiconductor module is an integrated circuit, wherein the semiconductor module is on a semiconductor substrate, and wherein the high-side switches are formed as p-channel semiconductor switching elements having a larger surface than the low-side switches, which are formed as n-channel semiconductor switching elements, so as to improve heat dissipation of the high-side switches. 7. A non-transitory computer readable storage medium having a computer program, which is executable by a computing unit, comprising: a computer program for operating a circuit system having at least three control stages for at least three phases, each of the control stages having a high-side switch and a low-side switch, each of the high-side switches and each of the low-side switches being capable of being brought into an electrically conductive state and into an electrically non-conductive state, by performing the following: determining a quantity that influences a temperature of at least one of the high-side switches and the low-side switches; selecting, in groups, either the high-side switches or the low-side switches as a function of the quantity influencing the temperature; and controlling the selected high-side switches or low-side switches in a freewheeling phase, so that the selected high-side switches or low-side switches form a freewheel during the freewheeling phase; wherein the high-side switches are situated and mounted in a center segment of a semiconductor module, and the low-side switches are situated and mounted in an edge segment of the semiconductor module, so that the high-side switches have a better cooling connection to the semiconductor module than the low-side switches, wherein the edge segment and the center segment are separate from one another on the semiconductor module, wherein the center segment has a larger surface area than does the edge segment, and wherein the semiconductor module is an integrated circuit, wherein the semiconductor module is on a semiconductor substrate, and wherein the high-side switches are formed as p-channel semiconductor switching elements having a larger surface than the low-side switches, which are formed as n-channel semiconductor switching elements, so as to improve heat dissipation of the high-side switches. 8. The non-transitory computer readable storage medium as recited in claim 7 , wherein the quantity that influences the temperature of the high-side switches and/or of the low-side switches includes at least one of a power loss, a current, a current level, a current duration, and a temperature. 9. The method as recited in claim 1 , wherein the quantity that influences the temperature of the high-side switches and/or of the low-side switches includes at least one of a power loss, a current, a current level, a current duration, and a temperature. 10. The computing unit as recited in claim 6 , wherein the quantity that influences the temperature of the high-side switches and/or of the low-side switches includes at least one of a power loss, a current, a current level, a current duration, and a temperature.
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