Solid-state imaging device and electronic apparatus

US10651222B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10651222-B2
Application numberUS-201716084602-A
CountryUS
Kind codeB2
Filing dateJan 18, 2017
Priority dateMar 23, 2016
Publication dateMay 12, 2020
Grant dateMay 12, 2020

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion region that is provided inside the semiconductor substrate on a pixel-by-pixel basis and performs photoelectric conversion on the light having the wavelength ranges, the light having the wavelength ranges having passed through the photoelectric conversion film. The photoelectric conversion film includes a film having an avalanche function.

First claim

Opening claim text (preview).

The invention claimed is: 1. A solid-state imaging device, comprising: a photoelectric conversion film above a semiconductor substrate, wherein the photoelectric conversion film is configured to: perform photoelectric conversion on light having a first wavelength range; and transmit light having a second wavelength range different from the first wavelength range; a color filter between the photoelectric conversion film and the semiconductor substrate; and a photoelectric conversion region inside the semiconductor substrate, wherein the photoelectric conversion region is configured to perform photoelectric conversion on the light having the second wavelength range, the light having the second wavelength range passes through the photoelectric conversion film, and the photoelectric conversion film has an avalanche function. 2. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion film is an organic film that includes an organic material. 3. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion film is an inorganic film that includes an inorganic material. 4. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion film has a function of accumulating charge obtained by the photoelectric conversion on the light having the first wavelength range. 5. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion film includes laminated photoelectric conversion films corresponding to two colors, and each of the photoelectric conversion films corresponding to the two colors includes a film having the avalanche function. 6. The solid-state imaging device according to claim 5 , wherein each of the photoelectric conversion films corresponding to the two colors is an organic film that includes an organic material. 7. The solid-state imaging device according to claim 5 , wherein each of the photoelectric conversion films corresponding to the two colors is an inorganic film that includes an inorganic material. 8. The solid-state imaging device according to claim 5 , wherein a first photoelectric conversion film of the photoelectric conversion films is on an incident light side of the solid-state imaging device, the first photoelectric conversion film is configured to perform photoelectric conversion on blue light, a second photoelectric conversion film of the photoelectric conversion films is on a semiconductor substrate side of the solid-state imaging device, the second photoelectric conversion film is configured to perform photoelectric conversion on green light, and the photoelectric conversion region inside the semiconductor substrate is further configured to perform photoelectric conversion on red light. 9. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion region inside the semiconductor substrate corresponds to at least one color. 10. The solid-state imaging device according to claim 9 , further comprising a complementary color filter on an incident light side of the photoelectric conversion film. 11. An electronic apparatus, comprising: a solid-state imaging device that includes: a photoelectric conversion film above a semiconductor substrate, wherein the photoelectric conversion film is configured to: perform photoelectric conversion on light having a first wavelength range; and transmit light having a second wavelength range different from the first wavelength range; a color filter between the photoelectric conversion film and the semiconductor substrate; and a photoelectric conversion region inside the semiconductor substrate, wherein the photoelectric conversion region is configured to perform photoelectric conversion on the light having the second wavelength range, the light having the second wavelength range passes through the photoelectric conversion film, and the photoelectric conversion film has an avalanche function. 12. The electronic apparatus according to claim 11 , wherein the photoelectric conversion film is an organic film that includes an organic material. 13. The electronic apparatus according to claim 11 , wherein the photoelectric conversion film is an inorganic film that includes an inorganic material. 14. The electronic apparatus according to claim 11 , wherein the photoelectric conversion film has a function of accumulating charge obtained by the photoelectric conversion on the light having the first wavelength range. 15. The electronic apparatus according to claim 11 , wherein the photoelectric conversion film includes laminated photoelectric conversion films corresponding to two colors, and each of the photoelectric conversion films corresponding to the two colors includes a film having the avalanche function. 16. The electronic apparatus according to claim 15 , wherein each of the photoelectric conversion films corresponding to the two colors is an organic film that includes an organic material. 17. The electronic apparatus according to claim 15 , wherein each of the photoelectric conversion films corresponding to the two colors is an inorganic film that includes an inorganic material. 18. The electronic apparatus according to claim 15 , wherein a first photoelectric conversion film of the photoelectric conversion films is on an incident light side of the solid-state imaging device, the first photoelectric conversion film is configured to perform photoelectric conversion on blue light, a second photoelectric conversion film of the photoelectric conversion films is on a semiconductor substrate side of the solid-state imaging device, the second photoelectric conversion film is configured to perform photoelectric conversion on green light, and the photoelectric conversion region inside the semiconductor substrate is further configured to perform photoelectric conversion on red light. 19. The electronic apparatus according to claim 11 , wherein the photoelectric conversion region inside the semiconductor substrate corresponds to at least one color. 20. The electronic apparatus according to claim 19 , wherein the solid-state imaging device further includes a complementary color filter on an incident light side of the photoelectric conversion film.

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10651222B2 cover?
A solid-state imaging device according to the present disclosure includes: a photoelectric conversion film that is provided outside a semiconductor substrate on a pixel-by-pixel basis, performs photoelectric conversion on light having a predetermined wavelength range, and transmits light having wavelength ranges other than the predetermined wavelength range; and a photoelectric conversion regio…
Who is the assignee on this patent?
Sony Corp
What technology area does this patent fall under?
Primary CPC classification H01L27/1463. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 12 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).