Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same
US-2015198879-A1 · Jul 16, 2015 · US
US10649330B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10649330-B2 |
| Application number | US-201715822999-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 27, 2017 |
| Priority date | Nov 29, 2016 |
| Publication date | May 12, 2020 |
| Grant date | May 12, 2020 |
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A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound (B1) having an anion moiety and a cation moiety and being represented by general formula (b1) (wherein R 01 to R 014 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R 01 to R 014 may be mutually bonded to form a ring structure, provided that at least two of R 01 to R 014 are mutually bonded to form a ring structure, and at least one of R 01 to R 014 has an anion group, and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; represents an integer of 1 or more; and M m+ represents an organic cation having a valency of m).
Opening claim text (preview).
What is claimed is: 1. A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising: a base component (A) which exhibits changed solubility in a developing solution under action of acid; and a compound (B1) having an anion moiety and a cation moiety represented by general formula (b1) shown below: wherein R 01 to R 014 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R 01 to R 014 may be mutually bonded to form a ring structure, provided that at least two of R 01 to R 014 are mutually bonded to form a ring structure, and one of R 01 to R 014 has one anion group, and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; m represents an integer of 1 or more; and M m+ represents an organic cation having a valency of m. 2. The resist composition according to claim 1 , wherein the anion moiety of the compound (B1) is an anion represented by general formula (b1-an1-0) shown below: wherein R 015 to R 020 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R 015 to R 020 may be mutually bonded to form a ring structure, provided that one of R 015 to R 020 has one anion group, and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; R 021 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxy group, a carbonyl group or a nitro group; n1 represents an integer of 1 to 3; n11 represents an integer of 0 to 8; R 022 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxy group, a carbonyl group or a nitro group; n2 represents an integer of 1 to 3; and n21 represents an integer of 0 to 8. 3. The resist composition according to claim 2 , wherein the compound (B1) is a compound represented by general formula (b1-1) shown below: wherein R 015 to R 020 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R 015 to R 020 may be mutually bonded to form a ring structure, provided that one of R 015 to R 020 has one anion group represented by general formula (b1-r-an1), and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; R b01 represents a fluorinated alkyl group or a fluorine atom; V b01 represents a alkylene group, a fluorinated alkylene group or a single bond; Y b01 represents a divalent linking group or a single bond; R 021 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxy group, a carbonyl group or a nitro group; n1 represents an integer of 1 to 3; n11 represents an integer of 0 to 8; R 022 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxy group, a carbonyl group or a nitro group; n2 represents an integer of 1 to 3; n21 represents an integer of 0 to 8; m represents an integer of 1 or more; and M m+ represents an organic cation having a valency of m. 4. The resist composition according to claim 1 , wherein the base component (A) comprises a resin component (A1), and the resin component (A1) comprises a polymeric compound having a structural unit (a1) containing an acid decomposable group that exhibits increased polarity by the action of acid. 5. A method of forming a resist pattern, comprising: forming a resist composition according to claim 1 ; exposing the resist film; and developing the exposed resist film to form a resist pattern. 6. A compound having a cation moiety and an anion moiety, represented by general formula (b1) shown below: wherein R 01 to R 014 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R 01 to R 014 may be mutually bonded to form a ring structure, provided that at least two of R 01 to R 014 are mutually bonded to form an aromatic ring structure, and one of R 01 to R 014 has one anion group, and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; m represents an integer of 1 or more; and M m+ represents an organic cation having a valency of m. 7. An acid generator consisting of the compound according to claim 6 .
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Phenols or alcohols · CPC title
Sulfonium compounds · CPC title
Ethanoanthracenes; Hydrogenated ethanoanthracenes · CPC title
the macromolecular compound having an alicyclic moiety in a side chain · CPC title
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