Conductive structure and method for manufacturing same
US-2015223326-A1 · Aug 6, 2015 · US
US10647089B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10647089-B2 |
| Application number | US-201615555938-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 16, 2016 |
| Priority date | Mar 16, 2015 |
| Publication date | May 12, 2020 |
| Grant date | May 12, 2020 |
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The present specification provides a conductive structure body and an electronic device comprising the same.
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The invention claimed is: 1. A conductive structure body comprising: a first dielectric layer comprising a first metal compound; a second dielectric layer comprising a second metal compound provided to face the first dielectric layer; and a metal layer provided between the first dielectric layer and the second dielectric layer, wherein the second metal compound comprises an oxide comprising at least one element selected from a group consisting of Nb, Zr, Y, Ta, La, V, Ti, Zn, Ni, B, Si, Al, In, and Sn, wherein an average light transmittance of the conductive structure body is 80% or more for light having a wavelength of 550 nm, and wherein the conductive structure body satisfies Equations 1 to 6 given below: 0.12 D eff + ( 1 - 0.06 k eff _ dielectric ) + ( 1 - 0.98 ( d · k eff _ metal ) ) ≤ 0.25 [ Equation 1 ] D eff = n eff _ 550 - 1 n eff _ 380 - n eff _ 450 [ Equation 2 ] n eff _ dielectric 2 = 1 2 { ( n 1 2 - k 1 2 ) f 1 +
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