Surface treatment method of glass substrate having pit on surface thereof, production method of array substrate, and array substrate

Patent metadata

Field	Value
Publication number	US-10644033-B2
Application number	US-201816129556-A
Country	US
Kind code	B2
Filing date	Sep 12, 2018
Priority date	Mar 5, 2018
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

There is provided a surface treatment method of a glass substrate having a pit on a surface thereof, a production method of an array substrate comprising this method, and an array substrate. The method includes: forming a layer of SiO2 sol at least at a side wall of the pit; and drying the layer of SiO2 sol to form a smoothening layer so as to smoothen an upper edge and a lower edge of the side wall of the pit.

First claim

What is claimed is:

1. A surface treatment method of a glass substrate having a pit on a surface thereof, wherein the method comprises:
forming a layer of SiO 2 sol at least at a side wall of the pit; and
drying the layer of SiO 2 sol to form a smoothening layer so as to smoothen an upper edge and a lower edge of the side wall of the pit; wherein a concentration of SiO 2 in the SiO 2 sol is about 0.005-0.02 g/ml; wherein the SiO 2 sol is prepared by mixing absolute ethanol, aqueous ammonia, and tetraethyl orthosilicate; wherein a molar ratio of aqueous ammonia to tetraethyl orthosilicate is about 3:1-5:1; wherein the surface treatment method further comprises: allowing SiO 2 colloidal particles to be negatively charged, and forming a layer of a sol having positively charged colloidal particles before forming the layer of the SiO 2 sol; wherein a pH value of the SiO 2 sol is adjusted to about 7.1-8.0.

2. The surface treatment method according to claim 1 , wherein the smoothening layer comprises SiO 2 .

3. The surface treatment method according to claim 1 , wherein the sol having positively charged colloidal particles comprises alkali metal cations, and the smoothening layer comprises an alkali metal silicate.

4. The surface treatment method according to claim 1 , wherein the sol having positively charged colloidal particles is a sodium polystyrene sulfonate sol, and the smoothening layer comprises sodium silicate.

5. The surface treatment method according to claim 1 , wherein a temperature of the drying is about 220-280° C.

6. A production method of an array substrate, comprising the surface treatment method according to claim 1 .

7. The production method according to claim 6 , wherein the production method comprises:
a step of forming a gate electrode on the glass substrate by etching, wherein the pit is formed on the surface of the glass substrate in the etching; and
a step of performing surface treatment on the glass substrate by the surface treatment method after the step of forming the gate electrode so as to smoothen the upper edge and the lower edge of the side wall of the pit.

8. The production method according to claim 7 , wherein the production method comprises:
a step of removing the gate electrode;
the step of performing the surface treatment after the step of removing the gate electrode; and
a step of forming the gate electrode again on the glass substrate after the step of performing the surface treatment, wherein an orthographic projection of the gate electrode formed again on the glass substrate covers an orthographic projection of the side wall of the pit on the glass substrate.

9. The production method according to claim 7 , wherein the production method further comprises:
a step of forming a gate electrode insulating layer or a source and drain electrode layer after the step of performing the surface treatment, wherein an orthographic projection of the gate electrode insulating layer or the source and drain electrode layer on the glass substrate covers an orthographic projection of the side wall of the pit on the glass substrate.

10. An array substrate, comprising a glass substrate, wherein
a surface of the glass substrate has a pit, a side wall of the pit has a SiO 2 layer or a silicate layer, and the SiO 2 layer or the silicate layer smoothens an upper edge and a lower edge of the side wall of the pit; wherein the array substrate comprises a gate electrode on the glass substrate, wherein an orthographic projection of the gate electrode on the glass substrate overlaps an orthographic projection of the side wall of the pit on the glass substrate; the array substrate further comprises a gate electrode insulating layer and source and drain electrode layers, wherein an orthographic projection of the gate electrode insulating layer and the source and drain electrode layers on the glass substrate overlaps an orthographic projection of the side wall of the pit on the glass substrate.

11. The array substrate according to claim 10 , wherein the silicate layer is a sodium silicate layer.

Assignees

• Boe Technology Group Co Ltd
• Hefei Xinsheng Optoelectronics Technology Co Ltd

Inventors

• Zhang Donghui
• Yin Hao
• Chen Chuan
• Ma Xiaoye

Classifications

• H10P50/667

  by liquid etching only · CPC title

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6546

  to change the surface groups of the insulating materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• C03C17/22

  with other inorganic material (C03C17/34, C03C17/44 take precedence) · CPC title