Process for the production of two-dimensional nanomaterials

Patent metadata

Field	Value
Publication number	US-10640866-B2
Application number	US-201515300540-A
Country	US
Kind code	B2
Filing date	Mar 31, 2015
Priority date	Mar 31, 2014
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

The present invention provides a process for producing a two-dimensional nanomaterial, the process comprising forming the two-dimensional nanomaterial on a surface of a substrate by CVD, wherein said surface is a liquid surface which comprises a molten eutectic compound. Substrates and substrate precursors for use in said process are also provided.

First claim

The invention claimed is:

1. A process for producing a two-dimensional nanomaterial, the process comprising forming the two-dimensional nanomaterial on a surface of a substrate by chemical vapour deposition (CVD), wherein said surface is a liquid surface which comprises a molten eutectic compound, wherein the two-dimensional nanomaterial is graphene, a graphene derivative, boron nitride, or a transition metal chalcogenide, and wherein the two-dimensional nanomaterial comprises from 1 to 20 monolayers and has a thickness of from 0.3 nm to 10 nm, wherein the eutectic compound is a metal silicide.

2. The process according to claim 1 , wherein the eutectic compound is a platinum silicide, a palladium silicide, a copper silicide or a nickel silicide.

3. The process according to claim 1 , wherein the process further comprises a step of forming the substrate from a substrate precursor, wherein the substrate precursor comprises a first layer formed of a first material and, disposed on a surface thereof, a second layer formed of a second material, wherein the substrate is formed by conditioning the substrate precursor such that the first material and the second material react to form the eutectic compound.

4. The process according to claim 3 , wherein the first material comprises a metal.

5. The process according to claim 4 , wherein the metal is a transition metal selected from platinum, palladium, copper, and nickel.

6. The process according to claim 5 , wherein the transition metal is platinum or palladium.

7. The process according to claim 3 , wherein the first layer comprises one or more topological defects or grain boundaries that are concealed by the second layer.

8. The process according to claim 3 , wherein the second material comprises a silicon-containing species.

9. The process according to claim 8 , wherein the second material comprises one or more of Si, SiO, SiO 2 , and SiN.

10. The process according to claim 9 , wherein the second material comprises SiO 2 .

11. The process according to claim 3 , wherein the substrate and the two-dimensional nanomaterial are both formed in the same CVD chamber.

12. The process according to claim 1 , wherein the step of forming the two-dimensional nanomaterial comprises contacting the liquid surface with one or more precursors for the two-dimensional nanomaterial.

13. The process according to claim 1 , wherein the process further comprises: (i) a step of cooling the substrate and the two-dimensional nanomaterial formed thereon; and/or (ii) a step of separating the two-dimensional nanomaterial from the substrate.

14. The process according to claim 1 , wherein the two-dimensional nanomaterial is an electrical conductor and the process further comprises forming a layer of an electrical insulator in contact with said two-dimensional nanomaterial, optionally wherein the process comprises forming said layer of electrical insulator from said substrate.

15. The process according to claim 1 , wherein the process further comprises forming an electronic device comprising said two-dimensional nanomaterial.

16. The process according to claim 1 , wherein the two-dimensional nanomaterial is graphene, a graphene derivative, boron nitride or a transition metal chalcogenide.

17. The process according to claim 16 , wherein the two-dimensional nanomaterial is graphene.

Assignees

• Univ Oxford Innovation Ltd

Inventors

• Babenko Vitaliy
• Grobert Nicole

Classifications

• C01B32/186

  by chemical vapour deposition [CVD] · CPC title

• C23C16/26

  Deposition of carbon only · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title

• Y10S977/843

  Gas phase catalytic growth, i.e. chemical vapor deposition · CPC title

• C23C16/003 Primary

  Coating on a liquid substrate · CPC title