Substrate processing apparatus and method for manufacturing semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-10640865-B2
Application number	US-201715629793-A
Country	US
Kind code	B2
Filing date	Jun 22, 2017
Priority date	Sep 9, 2016
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

First claim

What is claimed is:

1. A substrate processing apparatus, comprising:
a chamber accommodating a substrate;
a substrate support in the chamber, the substrate support supporting the substrate;
a cooler under the substrate to cool the substrate;
a gate disposed to be movable into and out of the chamber and operated to selectively divide the chamber into upper and lower chambers;
a gas injector to inject an oxidizing gas for oxidizing a metal layer on the substrate, the gas injector including a showerhead that is fixedly installed on a lower portion of the gate; and
a target mount facing the substrate and including a target for performing a sputtering process.

2. The substrate processing apparatus as claimed in claim 1 , wherein, when the gate is in the chamber:
the gate is between the target and the gas injector, and
the gate shields the target from the oxidizing gas injected from the gas injector.

3. The substrate processing apparatus as claimed in claim 1 , wherein the gate is movable such that the gate is not in a position between the target and the substrate when a sputtering process is performed using the target and is in the position between the target and the substrate when an oxidation process is performed using an oxidizing gas.

4. The substrate processing apparatus as claimed in claim 1 , wherein the cooler is operated to maintain the substrate at a temperature of less than about 298K when the oxidizing gas is injected.

5. The substrate processing apparatus as claimed in claim 1 , wherein:
the substrate support includes an electrostatic chuck for supporting the substrate, and
the electrostatic chuck is in direct contact with a cooling surface of the cooler.

6. A substrate processing apparatus, comprising:
a chamber in which a substrate is accommodatable;
a substrate support in the chamber and on which the substrate is supportable, the substrate support including a cooler therein;
a target mount facing the substrate support, the target mount including a target for performing a sputtering process that forms a metal layer on the substrate,
a gas injector to inject an oxidizing gas that oxidizes the metal layer on the substrate;
a gate between the target and the gas injector, the gate shielding the target from the oxidizing gas,
wherein the gas injector includes a showerhead facing the substrate and that uniformly distributes the oxidizing gas onto the substrate.

7. The substrate processing apparatus as claimed in claim 6 , wherein the cooler cools the substrate when the oxidizing gas is injected by the gas injector.

8. The substrate processing apparatus as claimed in claim 6 , wherein the gate:
is movably installable between the target and the substrate support, and
is capable of separating a space between the target and the substrate support.

9. The substrate processing apparatus as claimed in claim 8 , wherein:
the showerhead is fixedly installed on a substrate-facing side of the gate.

Assignees

• Lee Joon Myoung
• Park Yong Sung
• Kim Whan Kyun
• Oh Se Chung
• Jang Young Man
• Samsung Electronics Co Ltd

Inventors

• Lee Joon-Myoung
• Park Yong-Sung
• Kim Whan-Kyun
• Oh Se-Chung
• Jang Young-Man

Classifications

• C23C14/541

  Heating or cooling of the substrates · CPC title

• H01J37/34

  operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) · CPC title

• C23C16/45563

  Gas nozzles · CPC title

• H01J37/3244 Primary

  Gas supply means · CPC title

• C23C14/566

  using a load-lock chamber · CPC title