Method for preparing clean insulating single or few sheets of topological insulators using an ionic liquid

US10640377B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10640377-B2
Application numberUS-201715855023-A
CountryUS
Kind codeB2
Filing dateDec 27, 2017
Priority dateDec 30, 2016
Publication dateMay 5, 2020
Grant dateMay 5, 2020

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  5. First independent claim

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Abstract

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A method to produce high quality single or a few atomic layers thick samples of a topological insulating layered dichalcogenide. The overall process involves grinding layered dichalcogenides, adding them to an ionic liquid, and then using a mechanical method to cause intercalation of the ionic liquid into the van der Waals (VDW) gap between the layers of the metal chalcogenide.

First claim

Opening claim text (preview).

What is claimed as new and desired to be protected by Letters Patent of the United States is: 1. A method for preparing clean, insulating sheets of a topological insulator, comprising: adding a layered dichalcogenide to an ionic liquid, wherein the dichalcogenide comprises bismuth, and wherein the ionic liquid comprises 1,2-dimethyl-3-octylimidazolium paired with bis(trifluoromethanesulfonyl)imide; using a mechanical method to cause intercalation of the ionic liquid into a van der Waals gap between the layers of the dichalcogenide; and continuing the mechanical method to cause an individual sheet of the layered dichalcogenide to break apart or to cause a few sheets of the layered dichalcogenide to break apart with no bismuth remaining between the layers. 2. The method of claim 1 , wherein the layered dichalcogenide is Bi 2 X 3 , where X is Se or Te. 3. The method of claim 1 , wherein the mechanical method comprises a vibrational interaction. 4. The method of claim 1 , wherein the mechanical method comprises micro stirring and sonication of less than 20 joules of energy. 5. The method of claim 1 , wherein the mechanical method comprising stirring and applying heat. 6. Insulating sheets of a topological insulator made by the method, comprising: adding a layered dichalcogenide to an ionic liquid, wherein the dichalcogenide comprises bismuth, and wherein the ionic liquid comprises 1,2-dimethyl-3-octylimidazolium paired with bis(trifluoromethanesulfonyl)imide; using a mechanical method to cause intercalation of the ionic liquid into a van der Waals gap between the layers of the dichalcogenide; and continuing the mechanical method to cause an individual sheet of the layered dichalcogenide to break apart or to cause a few sheets of the layered dichalcogenide to break apart with no bismuth remaining between the layers. 7. The insulating sheets of a topological insulator of claim 6 , wherein the layered dichalcogenide is Bi 2 X 3 , where X is Se or Te. 8. The insulating sheets of a topological insulator of claim 6 , wherein the mechanical method comprises a vibrational interaction. 9. The insulating sheets of a topological insulator of claim 6 , wherein the mechanical method comprises micro stirring and sonication of less than 20 joules of energy. 10. The insulating sheets of a topological insulator of claim 6 , wherein the mechanical method comprising stirring and applying heat.

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Classifications

  • Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer · CPC title

  • C01B19/04Primary

    Binary compounds {including binary selenium-tellurium compounds (C01B19/004, C01B19/005, C01B19/007 take precedence)} · CPC title

  • Intercalated structures, i.e. with atoms or molecules intercalated in their structure · CPC title

  • Insulating bodies · CPC title

  • Electric properties · CPC title

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What does patent US10640377B2 cover?
A method to produce high quality single or a few atomic layers thick samples of a topological insulating layered dichalcogenide. The overall process involves grinding layered dichalcogenides, adding them to an ionic liquid, and then using a mechanical method to cause intercalation of the ionic liquid into the van der Waals (VDW) gap between the layers of the metal chalcogenide.
Who is the assignee on this patent?
Us Gov Sec Navy
What technology area does this patent fall under?
Primary CPC classification C01B19/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 05 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).