Methods and compositions for processing dielectric substrate

Patent metadata

Field	Value
Publication number	US-10639766-B2
Application number	US-201816018281-A
Country	US
Kind code	B2
Filing date	Jun 26, 2018
Priority date	Jul 13, 2015
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition useful for polishing a dielectric-containing substrate, the composition comprising:
aqueous medium,
abrasive particles dispersed in the aqueous medium, and
hydroxamic acid or substituted hydroxamic acid of the formula:

wherein R is selected from the group consisting of: hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, any of which may be substituted,

the slurry having a pH of below about 7, and further comprising from 10 to 10,000 ppm picolinic acid and about 1 ppm to about 250 ppm quaternary amine polymer.

2. The composition of claim 1 wherein the hydroxamic acid or substituted hydroxamic acid is salicylhydroxamic acid:

3. The composition of claim 1 wherein the hydroxamic acid or substituted hydroxamic acid is present in the polishing composition at a concentration of about 5 to about 3,000 parts per million.

4. The composition of claim 1 containing not greater than 0.001 weight percent metal passivating agent.

5. The composition of claim 1 wherein the abrasive particles contain at least 99 weight percent ceria, zirconia, silica, titania, or a mixture thereof, based on total weight abrasive particles.

6. The composition of claim 1 wherein the abrasive particles are wet-process ceria particles, calcined ceria particles, metal-doped ceria particles, zirconia particles, metal-doped zirconia particles, or a combination thereof.

7. The composition of claim 1 wherein the ceria particles are wet-process ceria particles having a median particle size of about 40 to about 100 nanometers, are present in the polishing composition at a concentration of about 0.005 weight percent to about 2 weight percent, and have a particle size distribution of at least about 300 nanometer.

8. The composition of claim 1 wherein the abrasive particles are present in the polishing composition at a concentration of about 0.1 weight percent to about 0.5 weight percent.

9. The composition of claim 1 comprising pH-adjusting agent, and wherein the pH of the polishing composition is about 1 to about 6.

10. A chemical-mechanical polishing composition useful for polishing a dielectric-containing substrate, the composition comprising:
aqueous medium,
ceria or ceria containing particles dispersed in the aqueous medium, and
hydroxamic acid or substituted hydroxamic acid of the formula:

wherein R is selected from the group consisting of: hydrogen, alkyl, cycloalkyl, aryl, heterocyclic alkyl, and heterocyclic aryl, any of which may be substituted,

the slurry having a pH of below about 7, and further comprising from 10 to 10,000 ppm picolinic acid.

11. The composition of claim 10 wherein the ceria or ceria containing particles are selected from pure ceria, metal-doped ceria, calcined ceria, wet processed ceria and combinations thereof.

12. The composition of claim 10 wherein the ceria or ceria containing particles have D50 in the range of 10-200 nm, and particle size distribution in the range of 100-500 nm.

Assignees

• Cabot Microelectronics Corp

Inventors

• Lam Viet
• Cui Ji

Classifications

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B57/02

  for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents · CPC title

• H10P52/00 Primary

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title