Elastic wave device, high-frequency front end circuit and communication device

Patent metadata

Field	Value
Publication number	US-10637434-B2
Application number	US-201715724567-A
Country	US
Kind code	B2
Filing date	Oct 4, 2017
Priority date	Nov 8, 2016
Publication date	Apr 28, 2020
Grant date	Apr 28, 2020

Abstract

An elastic wave device includes a piezoelectric substrate, an IDT electrode on the piezoelectric substrate, a support member that is provided on the piezoelectric substrate so as to surround the IDT electrode, a cover that covers the support member, via electrodes that penetrate through the support member and the cover, and bumps that are bonded to the via electrodes. The IDT electrode is located in a hollow space that is enclosed by the piezoelectric substrate, the support member and the cover. A protruding portion extends along at least a portion of an outer peripheral edge of a surface of the cover that is on the opposite side from the piezoelectric substrate, and the protruding portion extends in a direction away from the piezoelectric substrate.

First claim

What is claimed is:

1. An elastic wave device comprising:
a piezoelectric body;
a functional electrode that is provided on the piezoelectric body;
a support member that is provided on the piezoelectric body and surrounds the functional electrode;
a cover that covers the support member;
a via electrode that penetrates through the support member and the cover; and
a bump that is bonded to the via electrode; wherein
the functional electrode is located in a hollow space enclosed by the piezoelectric body, the support member and the cover;
a protruding portion extends along at least a portion of an outer peripheral edge of a surface of the cover that is on an opposite side from the piezoelectric body;
the protruding portion extends in a direction away from the piezoelectric body; and
the support member includes an opening that defines the hollow space, and the functional electrode is located in the opening of the support member.

2. The elastic wave device according to claim 1 , wherein, in plan view, the protruding portion is frame-shaped or substantially frame-shaped and is provided along an entire outer peripheral edge of the surface of the cover that is on the opposite side from the piezoelectric body.

3. The elastic wave device according to claim 1 , wherein the cover includes a resin.

4. The elastic wave device according to claim 1 , wherein the cover includes a first layer that is provided on the support member, and a second layer that is provided on the first layer.

5. The elastic wave device according to claim 1 , wherein the functional electrode is an IDT electrode.

6. A high-frequency front end circuit comprising:
the elastic wave device according to claim 1 ; and
a power amplifier.

7. The high-frequency front end circuit according to claim 6 , wherein, in plan view, the protruding portion is frame-shaped or substantially frame-shaped and is provided along an entire outer peripheral edge of the surface of the cover that is on the opposite side from the piezoelectric body.

8. The high-frequency front end circuit according to claim 6 , wherein the cover includes a resin.

9. The high-frequency front end circuit according to claim 6 , wherein the cover includes a first layer that is provided on the support member, and a second layer that is provided on the first layer.

10. The high-frequency front end circuit according to claim 6 , wherein the functional electrode is an IDT electrode.

11. A communication device comprising:
the high-frequency front end circuit according to claim 6 ; and
an RF signal processing circuit.

12. The communication device according to claim 11 , wherein, in plan view, the protruding portion is frame-shaped or substantially frame-shaped and is provided along an entire outer peripheral edge of the surface of the cover that is on the opposite side from the piezoelectric body.

13. The communication device according to claim 11 , wherein the cover includes a resin.

14. The communication device according to claim 11 , wherein the cover includes a first layer that is provided on the support member, and a second layer that is provided on the first layer.

15. The communication device according to claim 11 , wherein the functional electrode is an IDT electrode.

Assignees

• Murata Manufacturing Co

Inventors

• Fukuda Daisuke
• Fukuda Shinichi

Classifications

• C30B29/30

  Niobates; Vanadates; Tantalates · CPC title

• H03H9/64

  using surface acoustic waves · CPC title

• H03H3/02 Primary

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H9/058

  for surface acoustic wave devices · CPC title

• H03H9/02559

  of lithium niobate or lithium-tantalate substrates · CPC title