Thin film transistor, method for manufacturing same, and display device
US-2015372147-A1 · Dec 24, 2015 · US
US10636985B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10636985-B2 |
| Application number | US-201615735689-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 19, 2016 |
| Priority date | Sep 7, 2015 |
| Publication date | Apr 28, 2020 |
| Grant date | Apr 28, 2020 |
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Disclosed is a substrate for a photoelectric conversion element that is low in cost as compared with a conventional ITO/glass substrate, easy to handle, and does not lower the power generation performance of the solar cell. The substrate for a photoelectric conversion element is made of a stainless steel sheet having a passive film on a surface thereof, an atomic ratio Cr/(Fe+Cr) of the passive film on a surface thereof is 0.08 or more.
Opening claim text (preview).
The invention claimed is: 1. A substrate for a photoelectric conversion element, the substrate being made of a stainless steel sheet having a passive film on a surface thereof, wherein an atomic ratio Cr/(Fe+Cr) of the passive film on a surface thereof is 0.08 or more and 0.23 or less, and an arithmetic mean roughness Ra of the substrate for the photoelectric conversion element on a surface thereof is less than 10 nm. 2. The substrate for a photoelectric conversion element according to claim 1 , wherein the passive film has a thickness of less than 2.3 nm.
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