Cross-talk suppression in Geiger-mode avalanche photodiodes

Patent metadata

Field	Value
Publication number	US-10636929-B2
Application number	US-77115510-A
Country	US
Kind code	B2
Filing date	Apr 30, 2010
Priority date	Apr 30, 2009
Publication date	Apr 28, 2020
Grant date	Apr 28, 2020

Abstract

An avalanche photodiode detector is provided with a substrate including an array of avalanche photodiodes. An optical interface surface of the substrate is arranged for accepting external input radiation. There is provided at least one cross-talk blocking layer of material including apertures positioned to allow external input radiation to reach photodiodes and including material regions positioned for attenuating radiation in the substrate that is produced by photodiodes in the array. Alternatively at least one cross-talk blocking layer of material is disposed on the optical interface surface of the substrate to allow external input radiation to reach photodiodes and attenuate radiation in the substrate that is produced by photodiodes in the array. At least one cross-talk filter layer of material can be disposed in the substrate adjacent to the photodiode structures, including a material that absorbs radiation in the substrate that is produced by photodiodes in the array.

First claim

We claim:

1. An avalanche photodiode detector comprising:
a substrate ( 12 ) including an array of avalanche photodiodes ( 14 ), each avalanche photodiode provided as a structure of photodiode layers including a semiconducting input radiation absorber layer ( 154 ) having an absorber layer bandgap and a semiconducting avalanche multiplier layer ( 158 ) having a multiplier layer bandgap;
an optical interface surface ( 51 ) of the substrate arranged for accepting external input radiation; and
at least one cross-talk spectral filter layer ( 166 ) of material disposed in the substrate adjacent to the structure of photodiode layers and extending as a continuous blanket spectral filter layer across the array of avalanche photodiodes, the cross talk spectral filter layer comprising a semiconducting material having a band gap that is between the absorber layer band gap and the multiplier layer band gap to filter out radiation wavelengths in the substrate produced by the avalanche multiplier layer of the photodiodes in the array while allowing external input radiation to pass to the semiconducting input radiation absorber layer.

2. The avalanche photodiode detector of claim 1 wherein the semiconducting input radiation absorber layer ( 154 ) is characterized by a semiconducting band gap that sets a long wavelength boundary on a pass band of radiation wavelengths to be detected by the photodiode array and wherein the cross-talk spectral filter layer ( 166 ) is characterized by a semiconducting band gap that sets a short wavelength boundary on a pass band of radiation wavelengths to be detected by the photodiode array.

3. The avalanche photodiode detector of claim 1 wherein the substrate ( 12 ) comprises InP and the cross-talk spectral filter layer ( 166 ) comprises an InGaAsP alloy.

4. The avalanche photodiode detector of claim 3 wherein the semiconducting input radiation absorber layer ( 154 ) comprises an InGaAsP alloy.

5. The avalanche photodiode detector of claim 1 wherein the photodiode structures ( 14 ) comprise mesa structures including a semiconducting input radiation absorber layer ( 154 ) and a semiconducting avalanche multiplier layer ( 158 ).

6. The avalanche photodiode detector of claim 1 further comprising a microlens array ( 30 ) disposed at a position relative to the substrate to focus external input radiation to the photodiodes ( 14 ).

7. The avalanche photodiode detector of claim 6 wherein the microlens array ( 30 ) is disposed on the optical interface surface ( 51 ) of the substrate.

8. The avalanche photodiode detector of claim 1 further comprising electrical connections ( 42 ) from the substrate ( 12 ) for connecting to photodiode control and read out circuitry.

9. The avalanche photodiode detector of claim 1 further comprising at least one cross-talk blocking layer ( 60 ) comprising a plane of a blanket layer of material, disposed on the optical interface surface ( 51 ) of the substrate ( 12 ), that allows external input radiation to reach photodiodes ( 14 ) through the blanket layer of material and that attenuates radiation in the substrate that is produced by photodiodes in the array.

10. The avalanche photodiode detector of claim 1 further comprising at least one cross-talk blocking layer ( 60 ) comprising a plane of a continuous blanket layer of material including a pattern of apertures ( 62 ) positioned for allowing external input radiation to reach photodiodes ( 14 ) through the blanket layer of material and including a plane of continuous material regions ( 64 ) positioned for attenuating radiation in the substrate ( 12 ) that is produced by the avalanche photodiodes in the array.

11. The avalanche photodiode detector of claim 10 wherein the at least one cross-talk blocking layer ( 60 ) comprises at least one cross-talk blocking surface layer disposed on the optical interface surface ( 51 ) of the substrate.

Assignees

• Mcintosh K Alexander
• Chapman David C
• Donnelly Joseph P
• Oakley Douglas C
• Napoleone Antonio
• Duerr Erik K
• Verghese Simon
• Younger Richard D
• Massachusetts Inst Technology

Inventors

• Mcintosh K Alexander
• Chapman David C
• Donnelly Joseph P
• Oakley Douglas C
• Napoleone Antonio
• Duerr Erik K
• Verghese Simon
• Younger Richard D

Classifications

• H01L31/02005

  Electricity · mapped topic

• H01L31/03046

  Electricity · mapped topic

• H01L27/1446

  Electricity · mapped topic

• H01L31/02162

  Electricity · mapped topic

• H01L2924/0002

  Electricity · mapped topic