Growth of high quality single crystalline thin films with the use of a temporal seed layer

Patent metadata

Field	Value
Publication number	US-10633763-B2
Application number	US-201715819477-A
Country	US
Kind code	B2
Filing date	Nov 21, 2017
Priority date	Nov 21, 2016
Publication date	Apr 28, 2020
Grant date	Apr 28, 2020

Abstract

A method of making high quality insulating single crystalline In2Se3 films by (1) depositing at least one quintuple layer (QL) of Bi2Se3 on a substrate layer at a temperature below which only the Se adheres to the substrate; (2) depositing a plurality of In2Se3 QL's on the deposited Bi2Se3 layer or layers at a temperature between about 200° C. and about 330° C. to form a hetero-structure; and (3) heating the hetero-structure to a temperature between about 400° C. and about 700° C. so that the Bi2Se3 layer is diffused through the In2Se3 layer and evaporated away.

First claim

What is claimed is:

1. A method of making a high quality single crystalline In 2 Se 3 layer, comprising:
depositing at least one quintuple layer (QL) of Bi 2 Se 3 on a substrate layer at a temperature below which only the Se adheres to the substrate;
depositing a plurality of In 2 Se 3 QL's on the deposited Bi 2 Se 3 layer or layers at a temperature between about 200° C. and about 330° C. to form a hetero-structure;
heating the hetero-structure to a temperature between about 400° C. and about 700° C. so that the Bi 2 Se 3 layer is diffused through the In 2 Se 3 layer and evaporated away.

2. The method of claim 1 , wherein said Bi 2 Se 3 is deposited at a temperature between about 110° C. and about 200° C.

3. The method of claim 1 , wherein said hetero-structure is heated to about 600° C. so that the Bi 2 Se 3 layer is diffused through the In 2 Se 3 layer and evaporated away.

4. The method of claim 1 , wherein said substrate is single crystal Al 2 O 3 or a high κ-dielectric SrTiO 3 (111).

5. The method of claim 1 , wherein a plurality of Bi 2 Se 3 QL's are deposited on said substrate.

6. The method of claim 1 , wherein least one QL of BiInSe 3 is deposited on said In 2 Se 3 layer, after which at least one QL of Bi 2 Se 3 is deposited on said BiInSe 3 layer at the same temperature that BiInSe 3 is grown on In 2 Se 3 .

7. The method of claim 1 , further comprising the step of depositing at least one QL of Bi 2 Se 3 on said In 2 Se 3 layer at a temperature between about 200° C. and about 300° C.

8. The method of claim 6 , wherein said Bi 2 Se 3 layer and said BiInSe 3 layer are deposited at a temperature between about 200° C. and about 300° C.

9. The method of claim 1 , further comprising the step of depositing a capping layer MoO 3 on said Bi 2 Se 3 layer.

10. The method of claim 9 , further comprising depositing an Se layer on top of said MoO 3 layer.

Assignees

• Univ Rutgers

Inventors

• Oh Seongshik
• Brahlek Matthew J
• Koirala Nikesh
• Salehi Maryam

Classifications

• H10P14/3458

  Monocrystalline · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3236

  being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/2926

  Crystal orientations · CPC title