Quantum cascade laser

Patent metadata

Field	Value
Publication number	US-10630058-B2
Application number	US-201916297215-A
Country	US
Kind code	B2
Filing date	Mar 8, 2019
Priority date	Apr 26, 2018
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

A quantum cascade laser having a laser structure that includes a semiconductor mesa, a first end surface, a second end surface, and a first electrode provided on the semiconductor mesa. The laser structure includes a first region having the first end surface and a second region located between the second end surface and the first region. The semiconductor mesa includes a first mesa portion and a second mesa portion that are respectively included in the first region and the second region. The semiconductor mesa includes a first superlattice layer, a second superlattice layer, and a conductive semiconductor region. The first superlattice layer extends from the first end surface in the second axis direction and is included in the first mesa portion and the second mesa portion, and the second superlattice layer is provided in one of the first mesa portion and the second mesa portion.

First claim

What is claimed is:

1. A quantum cascade laser comprising:
a laser structure that includes a substrate and a semiconductor mesa arranged in a first axis direction and that has a first end surface and a second end surface arranged in a second axis direction crossing in the first axis direction; and
a first electrode that is provided on the semiconductor mesa,
wherein the laser structure includes a first region that includes the first end surface and a second region that is located between the second end surface and the first region,
wherein the semiconductor mesa includes a first mesa portion and a second mesa portion that are respectively included in the first region and the second region,
wherein the semiconductor mesa includes a first superlattice layer, a second superlattice layer, and a conductive semiconductor region,
wherein the first superlattice layer extends from the first end surface in the second axis direction and is included in the first mesa portion and the second mesa portion, and the second superlattice layer is provided in one of the first mesa portion and the second mesa portion, and
wherein the first superlattice layer includes an array of unit cells that provides a subband, and the second superlattice layer includes an array of unit cells that provides a subband.

2. The quantum cascade laser according to claim 1 ,
wherein the second superlattice layer is provided in the first mesa portion and reaches the first end surface.

3. The quantum cascade laser according to claim 1 ,
wherein the first electrode includes an end portion that is spaced apart from the first end surface.

4. The quantum cascade laser according to claim 1 , further comprising:
a second electrode that is connected to the substrate of the laser structure,
wherein the second electrode includes an end portion that is spaced apart from the first end surface.

5. The quantum cascade laser according to claim 1 ,
wherein the first superlattice layer and the second superlattice layer are arranged so as to be in contact with each other in the first axis direction.

6. The quantum cascade laser according to claim 1 ,
wherein the first superlattice layer is spaced apart from the second superlattice layer in the first axis direction.

7. The quantum cascade laser according to claim 1 ,
wherein, in the semiconductor mesa, the first mesa portion has a mesa width that decreases in a direction from the second mesa portion toward the first end surface.

8. The quantum cascade laser according to claim 1 ,
wherein the unit cells of the first superlattice layer include an active layer that enables intersubband transition and an injection layer that injects a carrier into the active layer, and
wherein the unit cells of the second superlattice layer are substantially the same as the unit cells of the first superlattice layer.

9. The quantum cascade laser according to claim 1 ,
wherein the unit cells of the first superlattice layer include an active layer having an aluminum indium arsenide (AlInAs)/gallium indium arsenide (GaInAs) superlattice and an injection layer having an AlInAs/GaInAs superlattice, and
wherein the unit cells of the second superlattice layer include an active layer having an AlInAs/GaInAs superlattice and an injection layer having an AlInAs/GaInAs superlattice.

Assignees

• Sumitomo Electric Industries

Inventors

• Hashimoto Jun-Ichi

Classifications

• H01S5/34313

  with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs · CPC title

• H01S5/3402 Primary

  intersubband lasers, e.g. transitions within the conduction or valence bands · CPC title

• H01S5/3401

  having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers · CPC title

• H01S5/16

  Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S5/14 takes precedence) · CPC title

• H01S5/22

  having a ridge or stripe structure · CPC title