Thin film transistor, method for preparing the same, and display device

Patent metadata

Field	Value
Publication number	US-10629834-B2
Application number	US-201816115009-A
Country	US
Kind code	B2
Filing date	Aug 28, 2018
Priority date	Feb 28, 2018
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

First claim

What is claimed is:

1. A thin film transistor comprising:
a gate electrode;
a gate insulating layer;
a semiconductor layer;
a source electrode;
a drain electrode; and
a photoelectric conversion layer in contact with the gate electrode,
wherein the photoelectric conversion layer is configured to generate an induced potential in a light environment; and
wherein the thin film transistor further comprises an interlayer insulating layer arranged on the photoelectric conversion layer, the source electrode and the drain electrode being arranged on the interlayer insulating layer.

2. The thin film transistor of claim 1 , wherein the thin film transistor is a thin film transistor with a bottom gate structure, and the photoelectric conversion layer comprises a transparent conductive layer, an electron transport layer, and a photosensitive layer which are arranged in sequence, and the photosensitive layer is in contact with the gate electrode.

3. The thin film transistor of claim 1 , wherein the thin film transistor is a thin film transistor with a top gate structure, and the photoelectric conversion layer comprises a photosensitive layer, an electron transport layer, and a transparent conductive layer which are arranged in sequence, and the photosensitive layer is in contact with the gate electrode.

4. The thin film transistor of claim 2 , wherein the photosensitive layer is made of a material having a general formula ABX 3 , in which A is CH 3 NH 3 , B is a metal element, and X is a halogen.

5. The thin film transistor of claim 2 , wherein the photosensitive layer is made of a material having a general formula ABX 3 , in which A is CH 3 NH 3 , B is a metal element in group IVA, and X is a halogen.

6. The thin film transistor of claim 2 , wherein the photosensitive layer is made of a material having a general formula CH 3 NH 3 PbX 3 , in which X is a halogen.

7. The thin film transistor of claim 1 , wherein the gate insulating layer has a unit capacitance of above 15 nF/cm 2 .

8. The thin film transistor of claim 7 , wherein the gate insulating layer is made of a silica solid electrolyte or an alumina solid electrolyte.

9. The thin film transistor of claim 2 , wherein the photosensitive layer has a thickness of 300 nm to 500 nm, the electron transport layer has a thickness of 500 nm to 1 μm, and the transparent conductive layer has a thickness of 100 nm to 200 nm.

10. A method for preparing a thin film transistor, comprising steps of:
forming a gate electrode,
forming a gate insulating layer,
forming a semiconductor layer,
forming an interlayer insulating layer,
forming a source electrode and a drain electrode, and
forming a photoelectric conversion layer in contact with the gate electrode on a base substrate,
wherein the interlayer insulating layer is arranged on the photoelectric conversion layer, and the source electrode and the drain electrode are arranged on the interlayer insulating layer.

11. The method of claim 10 , wherein the thin film transistor is a thin film transistor with a bottom gate structure, and the step of forming the photoelectric conversion layer in contact with the gate electrode comprises:
forming a transparent conductive layer on the base substrate;
depositing an electron transport layer on a surface of the transparent conductive layer;
forming a photosensitive layer on a surface of the electron transport layer; and
patterning the transparent conductive layer, the electron transport layer and the photosensitive layer, to obtain the photoelectric conversion layer.

12. The method of claim 10 , wherein the thin film transistor is a thin film transistor with a top gate structure, and the step of forming the photoelectric conversion layer in contact with the gate electrode comprises:
forming a photosensitive layer on a surface of the gate electrode;
depositing an electron transport layer on a surface of the photosensitive layer;
depositing a transparent conductive layer on a surface of the electron transport layer; and
patterning the transparent conductive layer, the electron transport layer and the photosensitive layer, to obtain the photoelectric conversion layer.

13. The method of claim 11 , wherein the step of forming the photosensitive layer comprises:
forming a solution containing a material having a general formula ABX 3 on a surface of the electron transport layer through spinning, to obtain the photosensitive layer after drying, wherein A is CH 3 NH 3 , B is a metal element, and X is a halogen.

14. The method of claim 11 , wherein the step of forming the photosensitive layer comprises:
forming a solution containing a material having a general formula ABX 3 on a surface of the electron transport layer through spinning, to obtain the photosensitive layer after drying, wherein A is CH 3 NH 3 , B is a metal element in group IVA, and X is a halogen.

15. The method of claim 11 , wherein the step of forming the photosensitive layer comprises:
forming a solution containing a material having a general formula ABX 3 on a surface of the electron transport layer through spinning, to obtain the photosensitive layer after drying, wherein A is CH 3 NH 3 , B is Pb, and X is a halogen.

16. The method of claim 12 , wherein the step of forming the photosensitive layer comprises:
forming a solution containing a material having a general formula ABX 3 on a surface of the gate electrode through spinning, to obtain the photosensitive layer after drying, wherein A is CH 3 NH 3 , B is a metal element, and X is a halogen.

17. The method of claim 12 , wherein the step of forming the photosensitive layer comprises:
forming a solution containing a material having a general formula ABX 3 on a surface of the gate electrode through spinning, to obtain the photosensitive layer after drying, wherein A is CH 3 NH 3 , B is a metal element in group IVA, and X is a halogen.

18. The method of claim 10 , wherein the step of forming the gate insulating layer comprises:
depositing a silicon dioxide solid electrolyte on the base substrate, on which the gate electrode or the semiconductor layer is formed, through vapor deposition, to obtain the gate insulating layer, and
in the vapor deposition, a gas flow ratio of SiH 4 to O 2 is from 1:4 to 1:5.

19. A display device, comprising the thin film transistor of claim 1 .

Assignees

• Boe Technology Group Co Ltd

Inventors

• Liu Song
• Wen Yu
• Sun Jianming
• Li Zhengliang
• Ma Xiaochen
• Hu hehe
• Zhang Wenlin
• Du Jianhua
• Ning ce

Classifications

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/4213

  Electricity · mapped topic

• H01L51/428 Primary

  Electricity · mapped topic

• H01L29/786

  Electricity · mapped topic

• H01L51/441

  Electricity · mapped topic