Magnetoresistance effect device and magnetoresistance effect module

Patent metadata

Field	Value
Publication number	US-10629806-B2
Application number	US-201916262513-A
Country	US
Kind code	B2
Filing date	Jan 30, 2019
Priority date	Feb 1, 2018
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

First claim

What is claimed is:

1. A magnetoresistance effect device comprising:
a first port;
a second port;
a first circuit unit and a second circuit unit connected between the first port and the second port;
a shared reference electric potential terminal connected to both of the first circuit unit and the second circuit unit, or a first reference electric potential terminal and a second reference electric potential terminal, each of which is connected to the first circuit unit and the second circuit unit, respectively; and
a shared DC application terminal configured to be capable of connecting a power supply for applying a DC current or a DC voltage to both of a first magnetoresistance effect element of the first circuit unit and a second magnetoresistance effect element of the second circuit unit, or a first DC application terminal and a second DC application terminal, each of which is configured to be capable of connecting a power supply for applying a DC current or a DC voltage to a first magnetoresistance effect element of the first circuit unit and a second magnetoresistance effect element of the second circuit unit, respectively,
wherein the first circuit unit includes the first magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer, and a spacer layer interposed therebetween,
one end of the first magnetoresistance effect element is connected to an input side of a high frequency current in the first circuit unit, and the other end of the first magnetoresistance effect element is connected to an output side of the high frequency current in the first circuit unit,
the second circuit unit includes the second magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer, and a spacer layer interposed therebetween, and a first conductor disposed to be separated from the second magnetoresistance effect element with an insulating body therebetween and
a first end portion of the first conductor is connected to an input side of a high frequency current such that a high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

2. A magnetoresistance effect device comprising:
a first port;
a second port;
a first circuit unit and a second circuit unit connected between the first port and the second port;
a shared reference electric potential terminal connected to both of the first circuit unit and the second circuit unit, or a first reference electric potential terminal and a second reference electric potential terminal, each of which is connected to the first circuit unit and the second circuit unit, respectively; and
a shared DC application terminal configured to be capable of connecting a power supply for applying a DC current or a DC voltage to both of a third magnetoresistance effect element of the first circuit unit and a second magnetoresistance effect element of the second circuit unit, or a first DC application terminal and a second DC application terminal, each of which is configured to be capable of connecting a power supply for applying a DC current or a DC voltage to a third magnetoresistance effect element of the first circuit unit and a second magnetoresistance effect element of the second circuit unit, respectively,
wherein the first circuit unit includes the third magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer, and a spacer layer interposed therebetween,
one end of the third magnetoresistance effect element is connected to an input side of a high frequency current and an output side of the high frequency current in the first circuit unit, and the other end of the third magnetoresistance effect element is connected to the shared reference electric potential terminal or the first reference electric potential terminal,
the second circuit unit comprises the second magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer, a spacer layer interposed therebetween, and a first conductor disposed to be separated from the second magnetoresistance effect element with an insulating body therebetween and
a first end portion of the first conductor is connected to an input side of a high frequency current such that a high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

3. The magnetoresistance effect device according to claim 1 , further comprising a third circuit unit connected between the first port and the second port,
wherein the third circuit unit includes a fourth magnetoresistance effect element including a magnetization fixed layer, a magnetization free layer, and a spacer layer interposed therebetween,
the shared reference electric potential terminal is connected to the third circuit unit, the first reference electric potential terminal is connected to the third circuit unit, the second reference electric potential terminal is connected to the third circuit unit, or a third reference electric potential terminal, which is provided to the magnetoresistance effect device, is connected to the third circuit unit,
the shared DC application terminal is configured to be capable of connecting the power supply for applying a DC current or a DC voltage to the fourth magnetoresistance effect element, the first DC application terminal is configured to be capable of connecting the power supply for applying a DC current or a DC voltage to the fourth magnetoresistance effect element, the second DC application terminal is configured to be capable of connecting the power supply for applying a DC current or a DC voltage to the fourth magnetoresistance effect element, or a third DC application terminal, which is provided to the magnetoresistance effect device, is configured to be capable of connecting a power supply for applying a DC current or a DC voltage to the fourth magnetoresistance effect element, and one end of the fourth magnetoresistance effect element is connected to an input side of a high frequency current and an output side of the high frequency current in the third circuit unit, the other end of the fourth magnetoresistance effect element is connected to the shared reference electric potential terminal, the first reference electric potential terminal, the second reference electric potential terminal or the third reference electric potential terminal.

4. A magnetoresistance effect module comprising:
the magnetoresistance effect device according to claim 1 ; and
a shared DC current source or a shared DC voltage source which is connected to the shared DC application terminal, or a first DC current source or a first DC voltage source and a second DC current source or a second DC voltage source, each of which is connected to the first DC application terminal and the second DC application terminal, respectively.

5. A magnetoresistance effect module comprising:
the magnetoresistance effect device according to claim 2 ; and
a shared DC current source or a shared DC voltage source which is connected to the shared DC application terminal, or a first DC current source or a first DC voltage source and a second DC current source or a second DC voltage source, each of which is connected to the first DC application terminal and the second DC application terminal, respectively.

6. A magnetoresistance effect module comprising:
the magnetoresistance effect device according to claim 3 ; and
a shared DC current source or a shared DC voltage source which is connected to the shared DC application terminal, or a first DC current source or a first DC voltage source

Assignees

• Tdk Corp

Inventors

• Suzuki Tsuyoshi
• Hara Shinji
• Shimura Atsushi

Classifications

• H03H2/00 Primary

  Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 · CPC title

• H03H2001/0057

  comprising magnetic material · CPC title

• H03B15/006

  using spin transfer effects or giant magnetoresistance · CPC title

• H03H2001/0085

  Multilayer, e.g. LTCC, HTCC, green sheets · CPC title

• H03H1/0007

  of radio frequency interference filters · CPC title