Laminated structure and spin modulation element

Patent metadata

Field	Value
Publication number	US-10629801-B2
Application number	US-201815943048-A
Country	US
Kind code	B2
Filing date	Apr 2, 2018
Priority date	May 31, 2017
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

A laminated structure includes a ferromagnetic layer, a multiferroic layer provided on one surface of the ferromagnetic layer, and a ferroelectric layer which is provided on the multiferroic layer opposite to the ferromagnetic layer and has a permittivity greater than that of the multiferroic layer.

First claim

What is claimed is:

1. A laminated structure comprising:
a ferromagnetic layer;
a multiferroic layer provided on one surface of the ferromagnetic layer; and
a ferroelectric layer provided on the multiferroic layer opposite to the ferromagnetic layer, wherein the ferroelectric layer has a permittivity greater than a permittivity of the multiferroic layer.

2. The laminated structure according to claim 1 , wherein a sum of thicknesses of the multiferroic layer and the ferroelectric layer is 10 nm or more and 1000 nm or less.

3. The laminated structure according to claim 1 , wherein the thickness of the multiferroic layer is 5 nm or more and 500 nm or less.

4. The laminated structure according to claim 1 , wherein the thickness of the ferroelectric layer is 5 nm or more and 500 nm or less.

5. The laminated structure according to claim 1 , wherein the ferroelectric layer has a relative permittivity of 10 or more.

6. The laminated structure according to claim 1 , wherein the ferroelectric layer is La x Sr 1-x MnO 3 (0≤x≤1), Ba x Sr 1-x TiO 3 (0≤x≤1), or PbZr x Ti 1-x O 3 (0≤x≤1).

7. The laminated structure according to claim 1 , wherein the ferromagnetic layer is a half-metal.

8. The laminated structure according to claim 1 , wherein the ferromagnetic layer includes a Heusler alloy represented by a composition formula of X 2 YZ, where X is a transition metal element or a noble metal element of the Co, Fe, Ni or Cu group on the periodic table, Y is a transition metal of the Mn, V, Cr or Ti group or an element type of X, and Z is a typical element of groups III to V.

9. The laminated structure according to claim 1 , wherein the multiferroic layer includes any one selected from the group consisting of BiFeO 3 , BiMnO 3 , GaFeO 3 , AlFeO 3 , (Ga, Al)FeO 3 , YMnO 3 , CuFeO 2 , Cr 2 O 3 , Ni 3 Bi 7 O 13 I, LiMnPO 4 , Y 3 Fe 5 O 12 , TbPO 4 , and LiCoPO 4 .

10. A spin modulation element comprising:
the laminated structure according to claim 1 ; and
a nonmagnetic layer and a second ferromagnetic layer sequentially laminated on the ferromagnetic layer of the laminated structure.

11. The laminated structure according to claim 1 , further comprising an electrode provided on the ferroelectric layer opposite to the multiferroic layer.

12. The spin modulation element according to claim 10 , further comprising an electrode provided on the ferroelectric layer opposite to the multiferroic layer.

Assignees

• Tdk Corp

Inventors

• Suzuki Eiji
• Nakada Katsuyuki
• Yonemura Shogo

Classifications

• H01F10/1936

  Half-metallic, e.g. epitaxial CrO2 or NiMnSb films · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G01R33/096

  anisotropic magnetoresistance sensors · CPC title

• H01F10/1933

  Perovskites · CPC title

• H01L43/02 Primary

  Electricity · mapped topic