Optoelectronic component, method for producing an optoelectronic component and flashlight for a portable device

Patent metadata

Field	Value
Publication number	US-10629784-B2
Application number	US-201716082921-A
Country	US
Kind code	B2
Filing date	Mar 15, 2017
Priority date	Mar 16, 2016
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

The invention relates to an optoelectronic component (100) comprising a semiconductor chip (1) for generating a primary beam in the blue spectral range, a conversion element (4) which is arranged in the beam path of the semiconductor chip (2) and is designed to generate a secondary beam from the primary beam, wherein the conversion element (4) comprises at least one first luminescent material (9) used as a conversion material, the first luminescent material (9) being (La1-xCax)3Si6(N1-yOy)11:Ce3+ with 0≤x≤1 and 0<y≤1, wherein a total beam (G) emerging from the component (100) is white mixed light.

First claim

The invention claimed is:

1. An optoelectronic component comprising
a semiconductor chip for generating a primary radiation in the blue spectral range,
a conversion element which is arranged in the beam path of the semiconductor chip and which is configured to generate secondary radiation from the primary radiation, wherein the conversion element comprises a plurality of phosphors as conversion materials, and each of the plurality of phosphors is Ce-doped;

wherein a first phosphor of the plurality of phosphors is (La 1-x Ca x ) 3 Si 6 (N 1-y O y ) 11 :Ce 3+ wherein 0≤x≤1 and 0<y≤1, wherein an overall emission exiting the component is white mixed light.

2. The optoelectronic component according to claim 1 , wherein the first phosphor has a wavelength maximum between 530 nm and 570 nm inclusive.

3. The optoelectronic component according to claim 1 , wherein the color locus of the component is between 6000 K and 3500 K on the Planck's black body curve.

4. The optoelectronic component according to claim 1 , wherein the semiconductor chip has a semiconductor layer sequence composed of InGaN and the primary radiation has a wavelength maximum between 380 nm and 480 nm inclusive.

5. The optoelectronic component according to claim 1 , wherein the first phosphor has a color locus for Cx between 0.420 and 0.490 and for Cy between 0.5000 and 0.560.

6. The optoelectronic component according to claim 1 , wherein the first phosphor is La 3 Si 6 (N 1-y O y ) 11 :Ce 3+ wherein 0≤y≤0.05.

7. The optoelectronic component according to claim 1 , wherein the conversion element comprises a second phosphor,
wherein the white mixed light of the component is composed of the primary radiation of the semiconductor chip and of the radiation emitted by the first and second phosphors, wherein the second phosphor is a Ce-doped (Y,Lu) 3 (Al,Ga) 5 O 12 .

8. The optoelectronic component according to claim 1 , wherein the conversion element comprises a second phosphor,
wherein the white mixed light of the component is composed of the primary radiation of the semiconductor chip and of the radiation emitted by the first and second phosphors.

9. The optoelectronic component according to claim 8 , wherein the first phosphor and the second phosphor are dispersed in a matrix material and directly follow a radiation exit area of the semiconductor chip, wherein the matrix material is a silicone, an epoxy or a hybrid material.

10. The optoelectronic component according to claim 8 , wherein the conversion element is formed as a layer system comprising at least two layers, wherein the first layer comprises the first phosphor and the second layer comprises the second phosphor, wherein the second layer is arranged between the semiconductor chip and the first layer.

11. The optoelectronic component according to claim 1 , comprising a further semiconductor chip which is configured to generate a further primary radiation in the blue spectral range, wherein the semiconductor chips are arranged in a common recess, wherein the conversion element is formed as a casting and surrounds both semiconductor chips in a form-fitting manner.

12. The optoelectronic component according to claim 1 , wherein the conversion element is formed as a ceramic.

13. A flashlight illumination for a portable device, comprising at least one optoelectronic component according to claim 1 .

14. A method for producing an optoelectronic component comprising the steps of:
A) providing a semiconductor chip for generating a primary radiation in the blue spectral range,
B) providing a conversion element which is arranged in the beam path of the semiconductor chip and is configured to generate secondary radiation from the primary radiation, wherein the conversion element comprises a plurality of phosphors as conversion materials, and each of the plurality of phosphors is Ce-doped;
wherein a first phosphor of the plurality of phosphors is (La 1-x Ca x ) 3 Si 6 (N 1-y O y ) 11 :Ce 3+ wherein 0≤x≤1 and 0<y≤1,
wherein an overall radiation exiting the component is white mixed light.

15. An optoelectronic component comprising
a semiconductor chip for generating a primary radiation in the blue spectral range,
a conversion element which is arranged in the beam path of the semiconductor chip and which is configured to generate secondary radiation from the primary radiation,

wherein the conversion element comprises at least one first phosphor as a conversion material,
wherein the first phosphor is (La 1-x Ca x ) 3 Si 6 (N 1-y O y ) 11 :Ce 3+ wherein 0<x≤1 and 0.5≤y≤1,
wherein an overall emission exiting the component is white mixed light.

16. The optoelectronic component according to claim 15 , wherein 0.5≤x≤1.

17. The optoelectronic component according to claim 15 , wherein the conversion element exclusively comprises the first phosphor as a conversion material, wherein the color locus of the component is between 6000 K and 3500 K on the Planck's black body curve.

18. The optoelectronic component according to claim 15 , wherein the conversion element comprises a second phosphor,
wherein the white mixed light of the component is composed of the primary radiation of the semiconductor chip and of the radiation emitted by the first and second phosphors,
wherein the second phosphor is selected from a group comprising (Ca, Sr)AlSiN 3 :Eu 2+ , Sr(Ca, Sr)Si 2 Al 2 N 6 :Eu 2+ , (Sr,Ca)AlSiN 3 *Si 2 N 2 O:Eu 2+ , (Ca,Ba,Sr) 2 Si 5 N 8 :Eu 2+ , (Sr,Ca)[LiAl 3 N 4 ]:Eu 2+ and (Ba,Sr) 2 Si 5 N 8 :Eu 2+ .

19. The optoelectronic component according to claim 15 , wherein the conversion element comprises exclusively cerium-doped phosphors as conversion materials.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Pust Philipp
• Noemer Martin

Classifications

• F21L4/027

  the light sources being a LED · CPC title

• H01L2933/0041

  Electricity · mapped topic

• H01L33/504 Primary

  Electricity · mapped topic

• H01L33/502

  Electricity · mapped topic

• H10H20/0361

  of wavelength conversion means · CPC title