Magnetic thin film deposition chamber and thin film deposition apparatus

Patent metadata

Field	Value
Publication number	US-10622145-B2
Application number	US-201916386651-A
Country	US
Kind code	B2
Filing date	Apr 17, 2019
Priority date	Oct 31, 2016
Publication date	Apr 14, 2020
Grant date	Apr 14, 2020

Abstract

The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.

First claim

What is claimed is:

1. A magnetic thin film deposition chamber, comprising:
a main chamber; and
a bias magnetic field device, wherein:
a base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece,
the bias magnetic field device includes a magnet assembly that has two sub-magnet groups, wherein:
each of the two sub-magnet groups includes a plurality of magnetic cylinders arranged along a circumferential direction of the base pedestal,
the plurality of magnetic cylinders in the two sub-magnet groups form two discrete arcs, a central angle corresponding to each of the arcs being less than 180 degrees,
each of magnetization directions of the plurality of magnet cylinders passing a center point of the base pedestal, or, in one of the sub-magnet groups, all of the magnetization directions of the plurality of magnet cylinders are parallel,
the magnet assembly is configured for forming a horizontal magnetic field above the base pedestal, and
the horizontal magnetic field is configured to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece.

2. The magnetic thin film deposition chamber according to claim 1 , wherein:
two sub-magnet groups are symmetrically disposed around the base pedestal.

3. The magnetic thin film deposition chamber according to claim 2 , wherein:
the plurality of magnetic cylinders are disposed horizontally, and
an N pole of each magnetic cylinder in one of the two sub-magnet groups and an S pole of each magnetic cylinder in the other of the two sub-magnet groups point to the base pedestal.

4. The magnetic thin film deposition chamber according to claim 2 , wherein:
the plurality of magnetic cylinders are disposed vertically, and
an N pole of each magnetic cylinder in one of the two sub-magnet groups and an S pole of each magnetic cylinder in the other of the two sub-magnet groups vertically point up.

5. The magnetic thin film deposition chamber according to claim 2 , wherein:
the plurality of magnetic cylinders are disposed obliquely, and
an N pole of each magnetic cylinder in one of the two sub-magnet groups and an S pole of each magnetic cylinder in the other of the two sub-magnet groups obliquely point up along a direction toward the base pedestal.

6. The magnetic thin film deposition chamber according to claim 2 , wherein:
in the plurality of magnetic cylinders of each sub-magnet group, a distribution density of the magnetic cylinders in a portion adjacent to two ends of the arc is smaller than a distribution density of the magnetic cylinders in a portion adjacent to a middle of the arc.

7. The magnetic thin film deposition chamber according to claim 2 , wherein:
the magnetic cylinders in the two sub-magnet groups are arranged such that a distance between an N pole of any magnetic cylinder pointing to the base pedestal and an S pole, pointing to the base pedestal, of a magnetic cylinder that receives magnetic field lines emitted from the N pole is larger than or equal to a diameter of the to-be-processed workpiece.

8. The magnetic thin film deposition chamber according to claim 1 , wherein the bias magnetic field device includes:
a support plate, configured to support the bias magnetic field device;
an inner fixing plate and an outer fixing plate, disposed on the support plate and respectively located inside and outside of the magnet assembly for fixing two ends of the bias magnetic field device, respectively;
an upper cover, located above the bias magnetic field device, and fixedly connected to the outer fixing plate and the inner fixing plate, respectively, wherein:
the bias magnetic field device is located in a space surrounded by the support plate, the outer fixing plate, the inner fixing plate, and the upper cover.

9. The magnetic thin film deposition chamber according to claim 1 , wherein:
the magnetic thin film deposition chamber further includes a shielding assembly, wherein:
the shielding assembly is configured to shield the bias magnetic field device, preventing deposition of a target material on the bias magnetic field device, and
the shielding assembly includes a shielding element, the shielding element including a first vertical portion, a horizontal portion, and a second vertical portion, the first vertical portion disposed around an inner side of a sidewall of the main chamber, an outer circumference of the horizontal portion connected to a lower end of the first vertical portion, and an inner circumference of the horizontal portion connected to an upper end of the second vertical portion, wherein:
the horizontal portion and the second vertical portion are located above and inside the bias magnetic field device, respectively.

10. The magnetic thin film deposition chamber according to claim 9 ,
further including a support component and a pressing ring, wherein:
the pressing ring is configured to press down an edge region of an upper surface of the to-be-processed workpiece;
the support component is connected to a lower end of the second vertical portion, and is configured to support the pressing ring;
an annular boss is disposed on the inner side of the sidewall of the main chamber, and the annular boss is located below the horizontal portion and on an outer side of the second vertical portion;
the bias magnetic field device is located in an annular space formed by the sidewall of the main chamber, the annular boss, the horizontal portion, and the second vertical portion; and
the bias magnetic field device is in contact with an upper surface of the annular boss.

11. The magnetic thin film deposition chamber according to claim 10 , wherein:
a cooling channel is disposed around the inner side of the sidewall of the main chamber and/or the annular boss along a circumferential direction, wherein the cooling channel is configured to introduce a cooling medium to cool the annular boss and the bias magnetic field device.

12. The magnetic thin film deposition chamber according to claim 10 , wherein:
a horizontal gap is formed between an inner wall of the bias magnetic field device and an outer wall of the second vertical portion; and
the horizontal gap is larger than or equal to 0.5 mm.

13. The magnetic thin film deposition chamber according to claim 10 , wherein:
a vertical gap is between an upper surface of the bias magnetic field device and a lower surface of the horizontal portion; and
the vertical gap is smaller than or equal to 5 mm.

14. A thin film deposition apparatus, comprising at least one first deposition chamber for depositing magnetized film layers, wherein:
each first deposition chamber of the at least one first deposition chamber includes:
a main chamber; and
a bias magnetic field device, wherein:
a base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece,
the bias magnetic field device includes a magnet assembly that has two sub-magnet groups, wherein:
each of the two sub-magnet groups includes a plurality of magnetic cylinders arranged along a circumferential direction of the base pedestal,
the plurality of magnetic cylinders in the two sub-magnet groups form two discrete arcs, a central angle corresponding to each of the arcs being less than 180 degrees,
each of magnetization directions of the plurality of magnet cylinders passing a center point of the base pedestal, or, in one of the sub-magnet groups, all of the magnetization directions of the plurality of magnet cylinders are parallel,
the magnet assembly is configured for forming a horizontal magnetic field above the base pedestal, and
the horizontal magnetic fiel

Assignees

• Beijing Naura Microelectronics Equipment Co Ltd

Inventors

• Yang Yujie
• Zhang Tongwen
• Xia Wei
• Ding Peijun
• Wang Hougong

Classifications

• H01F41/22 Primary

  Heat treatment; Thermal decomposition; Chemical vapour deposition · CPC title

• H01J37/3435

  Target holders (includes backing plates and endblocks) · CPC title

• H01F7/0273

  Magnetic circuits with PM for magnetic field generation · CPC title

• H01F7/02

  Permanent magnets {[PM]} · CPC title

• H01F41/18 Primary

  by cathode sputtering · CPC title